VISHAY BAY135

BAY135
Vishay Telefunken
Silicon Planar Diode
Features
D Very low reverse current
Applications
94 9367
Protection circuits, delay circuits
Absolute Maximum Ratings
Tj = 25_C
Parameter
Peak reverse voltage, non repetitive
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
tp=1ms
f=50Hz
Type
Symbol
VRSM
VRRM
VR
IFSM
IFAV
Tj
Tstg
Value
140
140
125
2
200
200
–65...+200
Unit
V
V
V
A
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Document Number 85552
Rev. 3, 18-Mar-99
Test Conditions
l=4mm, TL=constant
Symbol
RthJA
Value
350
Unit
K/W
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BAY135
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Test Conditions
IF=100mA
E 300lx, VR
E 300lx, VR, Tj=125°C
E 300lx, VR=60V
IR=5mA, tp/T=0.01, tp=0.3ms
VR=0, f=1MHz
Type
Symbol
VF
IR
IR
IR
V(BR)
CD
x
x
x
Breakdown voltage
Diode capacitance
Min
Typ
Max
1
3
0.5
1
140
5
Unit
V
nA
mA
nA
V
pF
Characteristics (Tj = 25_C unless otherwise specified)
1000
IF – Forward Current ( mA )
I R – Reverse Current ( nA )
10000
VR = VRRM
1000
Scattering Limit
100
10
Tj = 25°C
100
Scattering Limit
10
1
1
0.1
0
94 9079
40
80
120
160
200
Tj – Junction Temperature ( °C )
0
0.4
Figure 1. Reverse Current vs. Junction Temperature
0.8
1.2
1.6
2.0
VF – Forward Voltage ( V )
94 9078
Figure 2. Forward Current vs. Forward Voltage
Dimensions in mm
Cathode Identification
∅ 0.55 max.
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
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26 min.
3.9 max.
26 min.
Document Number 85552
Rev. 3, 18-Mar-99
BAY135
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85552
Rev. 3, 18-Mar-99
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