NJSEMI IRF632 N-channel power mosfets, 12 a, 150-200 v Datasheet

, LJnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRF230-233/IRF630-633
MTP12N18/12N20
N-Channel Power MOSFETs,
12 A, 150-200 V
Power And Discrete Division
Description
TO-204AA
TO-220AB
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high power, high speed
applications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid drivers and
high energy pulse circuits.
Low RDS(on)
VQS Rated at ±20 V
Silicon Gate for Fast Switching Speeds
'oss. vos(on), Specified at Elevated Temperature
Rugged
Low Drive Requirements
Ease of Paralleling
Product Summary
ID at
ID at
Part Number
VDSS
RDS (on)
Tc = 25°C
Tc = 100°C
IRF230
200 V
0.40 n
9.0 A
6.0 A
IRF231
160 V
0.40 n
9.0 A
6.0 A
B.O A
5.0 A
8.0 A
5.0 A
200 V
o.so n
o.so n
0.40 n
9.0 A
6.0 A
IRF631
150 V
0.40 JJ
9.0 A
6.0 A
IRF632
200 V
8.0 A
5.0 A
IRF633
150 V
o.so n
o.so n
8.0 A
5.0 A
0.35 n
0.35 n
12 A
8.5 A
12 A
8.5 A
IRF232
200 V
IRF233
150 V
IRF630
MTP12N18
180 V
MTP12N20
200 V
Case Style
TO-204AA
TO-220AB
Not«
For information concerning connection diagram and package outline, refer to
Section 7.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NI Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Oiinlitv
IRF230-233/IRF630-633
MTP12N18/12N20
Maximum Ratings
Characteristic
Symbol
Rating
IRF220/222
IRF620/622
MTP7N20
Rating
MTP7N18
Rating
IRF222/223
IRF622/623
Unit
VDSS
Drain to Source Voltage1
200
180
150
V
VDQR
Drain to Gate Voltage1
RGB = 20 ktt
200
180
150
V
VGS
Gate to Source Voltage
±20
±20
±20
V
Operating Junction and
Storage Temperatures
-55 to +150
-55 to +150
-55 to +150
°c
275
275
275
°c
TJ, Ts!g
TL
Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s
Maximum Thermal Characteristics
IRF220 - 233
IRF630-633
MTP12N18/20
1.67
1.25
°C/W
R«JC
Thermal Resistance,
Junction to Case
PD
Total Power Dissipation
at Tc - 25°C
75
100
W
'DM
Pulsed Drain Current8
40
40
A
Electrical Characteristics (Tc~25°C unless otherwise noted)
Symbol
Characteristic
Mln
Max
Unit
Test Conditions
Off Characteristics
V(BR)DSS
loss
Drain Source Breakdown Voltage
V
IRF230/232/630/632/
MTP12N20
200
MTP12N18
180
IRF231/233/631/633
150
Zero Gate Voltage Drain Current
250
1000
IGSS
Gate-Body Leakage Current
IRF230-233
±100
IRF630-633/
MTP12N18/12N20
±500
Vas = 0 V, ID •= 250 /iA
KA
VDS - Rated VDSS. VGS - 0 V
MA
VDS - 0.8 x Rated VDSS.
VGS = O V, TC-125°C
nA
VGS = ±20 v, vDS = o v
IRF230-233/IRF630-633
MTP12N18/12N20
Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Mln
Max
Test Conditions
Unit
On Characteristics
VQSIUI)
RDS(on)
Vos(on)
Gate Threshold Voltage
V
IRF230/233/630/633
2.0
4.0
|p - 250 jjA, VDS = Ves
MTP12N18/12N20
2.0
4.5
ID - 1 mA, VDS = VGS
VQS = 10 V, ID -5.0 A
2.1
V
VGS -10 V; ID = 6.0 A
5.0
V
VQS -10 V; ID -12.0 A;
4.2
V
VGS -10 V; b = 6.0 A
TC = 100°C
S (U)
VDS -10 V, ID = 5.0 A
VDS = 25 V, VQS = 0 V
f-1.0 MHz
IRF230/231/630/631
0.40
IRF232/233/632/633
0.50
MTP12N18/12N20
0.35
Drain-Source On-Voltage2
MTP12N18/12N20
Sfs
n
Static Drain-Source On-Resistance2
Forward Transconductance
3.0
ID -6.0 A
Dynamic Characteristics
Qss
Input Capacitance
800
PF
C05S
Output Capacitance
450
PF
ct8S
Reverse Transfer Capacitance
150
PF
Switching Characteristics (Tc = 25°C, Figures 1, 2)1
t«on)
Turn-On Delay Time
30
ns
tr
Rise Time
50
tdfrff)
Turn-Off Delay Time
50
ns
ns
t|
Fall Time
40
ns
td(on)
Turn-On Delay Time
50
ns
VDD = 25 V, b = 6,0 A
tr
Rise Time
250
ns
VGS -10 v, RGEN-SO fl
td(ofl)
Turn-Off Delay Time
100
ns
t(
Fall Time
120
ns
QB
Total Gate Charge
30
nC
VDD - 90 V, 1D - 5.0 A
VGS = 10 V, RGEN"=15 SI
RGs = i5 n
RGS - 50 n
VQS -10 V, ID =12 A
VDD -120 V
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