MMBT3904 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4) • Case: SOT23 Case Material: molded plastic, “Green” molding compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) C SOT23 B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Product MMBT3904-7-F MMBT3904Q-7-F MMBT3904-13-F Notes: Compliance AEC-Q101 Automotive AEC-Q101 Marking K1N / C1N K1N K1N / C1N Reel size (inches) 7 7 13 Tape width (mm) 8 8 8 Quantity per reel 3,000 3,000 10.000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http://www.diodes.com Marking Information C = CAT (Chengdu Assembly / Test site) 1N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) K = SAT (Shanghai Assembly / Test site) 1N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 MMBT3904 Document number: DS30036 Rev. 20 - 2 Mar 3 2012 Z Apr 4 2013 A May 5 Jun 6 1 of 7 www.diodes.com 2014 B Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D August 2012 © Diodes Incorporated MMBT3904 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Symbol VCBO VCEO VEBO IC Value 60 40 6.0 200 Unit V V V mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) PD RθJA RθJL TJ,TSTG Value 310 350 403 357 350 -55 to +150 Unit mW °C/W °C/W °C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value ≥ 8,000 ≥ 400 Unit V V JEDEC Class 3B C 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 7. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT3904 Document number: DS30036 Rev. 20 - 2 2 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT3904 Thermal Characteristics 400 Thermal Resistance (°C/W) Max Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Temperature (°C) 350 300 250 200 D=0.5 150 100 D=0.1 Single Pulse D=0.2 50 0 100µ D=0.05 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 10 Single Pulse. T amb=25°C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation MMBT3904 Document number: DS30036 Rev. 20 - 2 3 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT3904 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 10) Symbol Min Max Unit BVCBO BVCEO BVEBO ICEX IBL 60 40 6.0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 V V V nA nA hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(sat) ⎯ 0.20 0.30 V Base-Emitter Saturation Voltage VBE(sat) 0.65 ⎯ 0.85 0.95 V Cobo Cibo hie hre hfe hoe ⎯ ⎯ 1.0 0.5 100 1.0 4.0 8.0 10 8.0 400 40 pF pF kΩ -4 x 10 ⎯ μS fT 300 ⎯ MHz NF ⎯ 5.0 dB td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 200 50 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: ⎯ Test Condition IC = 10μA, IE = 0 IC = 10mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMBT3904 Document number: DS30036 Rev. 20 - 2 4 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT3904 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 10 1 0.1 0.01 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 1 Typical DC Current Gain vs. Collector Current 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 15 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.1 1 0.1 0.1 10 100 1,000 1 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Base-Emitter Saturation Voltage vs. Collector Current 10 5 0 0.1 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance Characteristics 100 IC, COLLECTOR CURRENT (A) 1 Pw = 10ms 0.1 DC Pw = 100ms 0.01 0.001 T A = 25°C Single Non-repetitive Pulse DUT mounted onto 1xMRP FR-4 board 0.1 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 5 Typical Collector Current vs. Collector-Emitter Voltage MMBT3904 Document number: DS30036 Rev. 20 - 2 5 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT3904 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X MMBT3904 Document number: DS30036 Rev. 20 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 6 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT3904 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com MMBT3904 Document number: DS30036 Rev. 20 - 2 7 of 7 www.diodes.com August 2012 © Diodes Incorporated