DSK MUR110 Super fast rectifier Datasheet

Diode Semiconductor Korea MUR105 --- MUR160
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 1.0 A
SUPER FAST RECT IFIERS
FEATURES
Low cos t
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with alcohol,Is opropanol
and s im ilar s olvents
DO - 41
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO--41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
MUR MUR MUR MUR MUR
105
110
115
120
130
MUR MUR MUR
UNITS
140
150
160
Maximum recurrent peak reverse voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS voltage
V R MS
35
70
105
140
210
280
350
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
500
600
V
Maximum average f orw ard rectif ied current
9.5mm lead length,
@TA =75
IF(AV)
1.0
A
IFSM
35.0
A
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous f orw ard voltage
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =100
VF
IR
0.875
1.25
2.0
5.0
50
150
25
50
Maximum reverse recovery time
(Note1)
t rr
Typical junction capacitance
(Note2)
CJ
22
Typical thermal resistance
(Note3)
Rθ JA
50
TJ
- 55 ----- + 150
TSTG
- 55 ----- + 150
Operating junction temperature range
Storage temperature range
V
A
ns
pF
/W
N OTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MH z and applied rev erse v oltage of 4.1V D C .
3. Therm al res istanc e f rom junction to am bient.
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Diode Semiconductor Korea
MUR105 --- MUR160
FIG.2 -- FORWARD DRATING CURVE
1.5
20
AVERAGE FORWARD CURRENT
AMPERES
M UR130-M UR150
10
6
4
2
M UR105-M UR120
M UR160
1
0.6
0.4
0.2
0.1
0.06
0.04
T J =25
Pulse W idth=300 µ s
0.02
0.01
0.5
0.7
0.9
1.1
1.3
1.5
1.25
1.0
0.75
0.5
0.25
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(9.5mm)Lead Length
0
25
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
50
75
100
125
150
175
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE. pF
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.1 -- TYPICAL FORWARD CHARACTERISTICS
100
60
40
20
10
6
4
2
TJ =25
f=1.0MHz
1
0.1 0.2 0.4
1
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
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MUR105 --- MUR160
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
40
20 TA=150℃
10
4
2 TA=100℃
1
.4
.2
.1 TA=25℃
.04
.02
.01
20
40
FIG.5 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
100
MICRO AMPERES
INSTANTANEOUS REVERSE LEAKAGE CURRENT
Diode Semiconductor Korea
60
80
60
50
8.3ms Single Half
Sine-Wave
40
30
20
10
0
1
2
4
10
20
40
100
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
NUMBER OF CYCLES AT 60Hz
FIG.6 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
trr
+0.5A
D.U.T.
(+)
25VDC
(approx)
(-)
PULSE
GENERATOR
(NOTE2)
1
NONINDUCTIVE
0
-0.25A
OSCILLOSCOPE
(NOTE 1)
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
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