Vishay IRF9Z14 Power mosfet Datasheet

IRF9Z14, SiHF9Z14
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
- 60
RDS(on) (Ω)
VGS = - 10 V
Qg (Max.) (nC)
0.50
12
Qgs (nC)
3.8
Qgd (nC)
5.1
Configuration
Single
S
Dynamic dV/dt Rating
Repetitive Avalanche Rated
P-Channel
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
G
G
D
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF9Z14PbF
Lead (Pb)-free
SiHF9Z14-E3
IRF9Z14
SnPb
SiHF9Z14
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
- 6.7
- 4.7
A
- 27
0.29
W/°C
Single Pulse Avalanche Energyb
EAS
140
mJ
Repetitive Avalanche Currenta
IAR
- 6.7
A
Repetitive Avalanche Energya
EAR
4.3
mJ
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
43
W
dV/dt
- 4.5
V/ns
TJ, Tstg
- 55 to + 175
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 3.6 mH, Rg = 25 Ω, IAS = - 6.7 A (see fig. 12).
c. ISD ≤ - 6.7 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
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1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z14, SiHF9Z14
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = - 250 μA
- 60
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.060
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 μA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V
-
-
- 100
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
-
-
- 500
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = - 4.0 Ab
VGS = - 10 V
VDS = - 25 V, ID = - 4.0 Ab
μA
-
-
0.50
Ω
1.4
-
-
S
-
270
-
-
170
-
-
31
-
-
-
12
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
3.8
Gate-Drain Charge
Qgd
-
-
5.1
Turn-On Delay Time
td(on)
-
11
-
tr
-
63
-
-
10
-
-
31
-
-
4.5
-
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 6.7 A, VDS = - 48 V,
see fig. 6 and 13b
VDD = - 30 V, ID = - 6.7 A,
Rg = 24 Ω, RD = 4.0 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
-
7.5
-
-
-
- 6.7
-
-
- 27
-
-
- 5.5
-
80
160
ns
-
0.096
0.19
μC
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 6.7 A, VGS = 0 Vb
TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/μsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z14, SiHF9Z14
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
101
- ID, Drain Current (A)
101
100
- 4.5 V
- ID, Drain Current (A)
Top
25 °C
100
10-1
20 µs Pulse Width
VDS = - 25 V
20 µs Pulse Width
TC = 25 °C
10-1
10-1
100
101
- VDS, Drain-to-Source Voltage (V)
91088_01
4
100
- 4.5 V
20 µs Pulse Width
TC = 175 °C
10-1
10-1
100
101
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 ° C
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
6
7
8
9
10
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
- ID, Drain Current (A)
101
VGS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
5
- VGS, Gate-to-Source Voltage (V)
91088_03
Fig. 1 - Typical Output Characteristics, TC = 25 °C
91088_02
175 °C
91088_04
3.0
ID = - 6.7 A
VGS = - 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40- 20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z14, SiHF9Z14
600
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
480
360
Ciss
Coss
240
120
Crss
- ISD, Reverse Drain Current (A)
Vishay Siliconix
101
175 °C
25 °C
100
0
101
1.0
- VDS, Drain-to-Source Voltage (V)
91088_05
VDS = - 48 V
12
8
4
0
91088_06
3
6
9
12
10 µs
100 µs
10
5
1 ms
TC = 25 °C
TJ = 175 °C
Single Pulse
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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1
1
15
QG, Total Gate Charge (nC)
6.0
2
2
For test circuit
see figure 13
0
5.0
4.0
Operation in this area limited
by RDS(on)
5
- ID, Drain Current (A)
- VGS, Gate-to-Source Voltage (V)
102
VDS = - 30 V
3.0
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = - 6.7 A
16
2.0
- VSD, Source-to-Drain Voltage (V)
91088_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
VGS = 0 V
10-1
100
91088_08
2
5
10
10 ms
2
5
102
- VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z14, SiHF9Z14
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+VDD
7.5
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
- ID, Drain Current (A)
6.0
Fig. 10a - Switching Time Test Circuit
4.5
3.0
td(on)
td(off) tf
tr
VGS
1.5
10 %
0.0
25
50
75
100
125
150
175
90 %
VDS
TC, Case Temperature (°C)
91088_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
D = 0.5
1
0.2
0.1
PDM
0.05
0.1
Single Pulse
(Thermal Response)
0.02
0.01
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
91088_11
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z14, SiHF9Z14
Vishay Siliconix
L
Vary tp to obtain
required IAS
IAS
VDS
VDS
D.U.T.
RG
+ V DD
VDD
IAS
tp
- 10 V
0.01 Ω
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
500
ID
- 2.7 A
- 4.7 A
Bottom - 6.7 A
Top
400
300
200
100
0
VDD = - 25 V
25
91088_12c
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF9Z14, SiHF9Z14
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
+
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91088.
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
www.vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer

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Revision: 08-Feb-17
1
Document Number: 91000
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