SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 SEPTEMBER 1995 ✪ PARTMARKING DETAIL SP S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -50 V Continuous Drain Current ID -130 mA Pulsed Drain Current IDM -520 mA Gate-Source Voltage Peak VGS ±20 V Power Dissipation at Tamb=25°C PTOT 360 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -50 Gate-Source Threashold Voltage VGS(th) -0.8 Zero gate Voltage Drain Current IDSS TYP. MAX. UNIT CONDITIONS. V VGS=0V, ID=0.25mA -1.5 -2.0 V VDS=VGS , ID=-1mA -1 -2 -15 -60 µA µA T j =25 °C T j =125 °C V DS =-50V, V GS =0V(2 ) T =25 °C j -100 V DS =-25V, V GS =0V Gate-Source Leakage Current IGSS -1 -10 nA VGS = ± 20V VDS=0V Drain Source On-State Resistance (1) RDS(on) 6 10 Ω VGS=-5V ID=-100mA Forward Transconductance (1) (2) gfs S VDS=-25V ID=-100mA Input Capacitance (2) Ciss 40 Output Capacitance Coss 15 Reverse Transfer Capacitance (2) Crss 6 Turn-On Time ton td(on) 10 tr 10 td(off) 18 tf 25 Turn-Off Time toff 0.05 0.07 pF ns VGS=0V VDS=-25V f=1MHz VDD=-30V ID=-0.27A VGS=-10V RGS=50Ω * (1) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2% (2) Sample test. 3 - 69