DIODES ZXTP19100CZ

ZXTP19100CZ
100V PNP medium power transistor in SOT89
Summary
BVCEO > -100V
BVECO > -7V
IC(cont) = 2A
VCE(sat) < -130mV @ -1A
RCE(sat) = 100mV
PD = 2.4W
Complementary part number ZXTN19100CZ
Description
C
Packaged in the SOT89 outline this new low saturation 100V PNP
transistor offers extremely low on state losses making it ideal for use
in DC-DC circuits and various driving and power management
functions
B
Features
E
•
High gain
•
Low saturation voltage
•
High peak current
Applications
•
High side driver
•
Motor drive
•
Load disconnect switch
E
C
C
B
Ordering information
Device
ZXTP19100CZTA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1000
Pinout - top view
Device marking
1M3
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ZXTP19100CZ
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-Base voltage
VCBO
-110
V
Collector-Emitter voltage (forward blocking)
VCEX
-110
V
Collector-Emitter voltage
VCEO
-100
V
Emitter-Collector voltage (reverse blocking)
VECO
-7
V
Emitter-Base voltage
VEBO
-7
V
Continuous Collector current(c)
IC
-2
A
Base current
IB
-1
A
Peak pulse current
ICM
-3
A
Power dissipation at TA =25°C(a)
PD
1.1
W
8.8
mW/°C
1.8
W
14.4
mW/°C
2.4
W
19.2
mW/°C
Linear derating factor
PD
Power dissipation at TA =25°C(b)
Linear derating factor
PD
Power dissipation at TA =25°C(c)
Linear derating factor
4.46
W
35.7
mW/°C
26.3
W
213
mW/°C
Tj, Tstg
-55 to 150
°C
PD
Power dissipation at TA =25°C(d)
Linear derating factor
PD
Power dissipation at TC =25°C(e)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Limit
Unit
ambient(a)
RUJA
117
°C/W
Junction to ambient(b)
RUJA
68
°C/W
Junction to ambient(c)
RUJA
51
°C/W
Junction to ambient(d)
RUJA
28
°C/W
Junction to case(e)
RUJC
4.5
°C/W
Junction to
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab).Typical
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ZXTP19100CZ
Thermal characteristics
1m
Collector Current (A)
CE(sat)
Limited
see note (c)
Collector Current (A)
V
1
DC
1s
100ms
100m
10ms
1ms
100µs
=25°C
amb
100m
1
-V
CE
BV
=100V
(BR)CEO
10µ
1µ
BV
C
T
10m
in this region
100µ
10
100
90
Collector-Emitter Voltage (V)
100
-V
CE
Safe Operating Area
=110V
T
(BR)CEX
- I
-I
C
Single Pulse
Failure may occur
=25°C
amb
110
120
Collector-Emitter Voltage (V)
Safe Operating Area
Max Power Dissipation (W)
2.5
see note (c)
2.0
1.5
see note (b)
1.0
0.5
see note (a)
0.0
0
20
40
60
80
100
120
140
160
Temperature (°C)
Derating Curve
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ZXTP19100CZ
100
120
T
100
=25°C
Maximum Power (W)
Thermal Resistance (°C/W)
Thermal characteristics
amb
see note (a)
80
60
40
D=0.5
D=0.2
Single Pulse
20
D=0.05
D=0.1
0
100µ
1m
10m 100m
1
10
100
Single Pulse
T
10
1
100µ
1k
1m
Pulse Width (s)
Maximum Power (W)
Thermal Resistance (°C/W)
=25°C
amb
see note (b)
50
D=0.5
30
Single Pulse
D=0.2
D=0.05
10
D=0.1
0
100µ
1m
10m 100m
1
10
100
T
=25°C
amb
see note (b)
10
1
100µ
1k
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
T
=25°C
Maximum Power (W)
Thermal Resistance (°C/W)
1k
100
50
20
100
Single Pulse
Pulse Width (s)
Transient Thermal Impedance
30
10
100
T
60
40
1
Pulse Width (s)
70
20
10m 100m
Pulse Power Dissipation
Transient Thermal Impedance
40
=25°C
amb
see note (a)
amb
see note (c)
D=0.5
Single Pulse
D=0.2
10
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
=25°C
amb
10
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
© Zetex Semiconductors plc 2008
T
see note (c)
1
100µ
1k
Pulse Power Dissipation
Transient Thermal Impedance
Issue 1- February 2008
Single Pulse
4
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ZXTP19100CZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-Base breakdown BVCBO
voltage
Collector-Emitter
BVCEX
breakdown voltage
Min.
-110
Typ.
-135
-110
-135
V
IE = -100µA, RBC < 1kΩ or
0.25V > VBC > -0.25V
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
BVCEO
-100
-130
V
IC= -10mA (*)
BVECX
-7
-8.3
V
IE = -100µA, RBC < 1kΩ or
0.25V > VBC > -0.25V
BVECO
-7
-8.7
V
IE = -100µA
BVEBO
-7
-8.3
V
IE = -100µA
ICBO
<1
-50
-0.5
nA
µA
VCB = -110V
VCB = -110V, Tamb=100°C
Emitter cut-off current
IEBO
<1
-50
nA
VEB = -5.6V
Collector-Emitter
saturation voltage
VCE(sat)
-100
-100
-180
-220
-130
-125
-230
-295
mV
mV
mV
mV
IC = -0.5A, IB = -20mA(*)
IC = -1A, IB = -100mA(*)
IC = -1A, IB = -50mA(*)
IC = -2A, IB = -200mA(*)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
-890
-1000
mV
IC = -2A, IB = -200mA(*)
VBE(on)
-840
-950
mV
IC = -2A, VCE = -2V(*)
300
130
25
500
Transition frequency
fT
142
Input capacitance
Cibo
291
400
pF
VEB = -0.5V, f = 1MHz(*)
Output capacitance
Cobo
23.5
40
pF
VCB = -10V, f = 1MHz(*)
Delay time
td
24.7
ns
Rise time
tr
22.4
ns
Storage time
ts
660
ns
Fall time
tf
107
ns
hFE
200
70
20
Max.
Unit
V
Conditions
IC = -100µA
IC = -100mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
IC = -2A, VCE = -2V(*)
MHz
IC = -100mA, VCE = -10V
f = 50MHz
IC = -500mA, VCC = -10V,
IB1 = -IB2 = -50mA
Rb=100Ω, Rc=20Ω
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
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Typical characteristics
1
0.4
Tamb=25°C
I /I =10
C
B
I /I =50
B
CE(SAT)
CE(SAT)
(V)
0.3
(V)
C
100m
I /I =20
- V
B
- V
C
0.2
150°C
100°C
0.1
25°C
I /I =10
C
B
10m
0.0
1m
10m
100m
- I
1
V
CE(SAT)
CE(SAT)
V
C
300
25°C
0.6
200
0.4
-55°C
B
0.8
(V)
400
BE(SAT)
100°C
- V
500
C
-55°C
I /I =10
150°C
v I
1.0
600
=2V
CE
0.6
150°C
100°C
0.4
25°C
100
0.2
0.2
0
1m
10m
- I
100m
1
1m
h
FE
10m
- I
Collector Current (A)
C
C
v I
100m
1
Collector Current (A)
V
C
BE(SAT)
v I
C
400
1.2
V
=2V
350
CE
1.0
Capacitance (pF)
-55°C
25°C
(V)
1
Collector Current (A)
V
C
Typical Gain (hFE )
Normalised Gain
C
0.0
0.8
0.6
- V
BE(ON)
100m
- I
1.0
0.8
10m
v I
1.6
1.2
10
Collector Current (A)
C
1.4
-55°C
150°C
0.4
100°C
f = 1MHz
300
250
Cibo
200
150
100
Cobo
50
0
0.2
1m
10m
- I
100m
10m
1
V
BE(ON)
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100m
1
10
100
- Voltage(V)
Collector Current (A)
C
Capacitance v Voltage
v I
C
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ZXTP19100CZ
Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
B
0.44
0.56
0.017
B1
0.36
0.48
C
0.35
D
D1
DIM
Millimeters
Inches
Min
Max
Min
Max
E
2.29
2.60
0.090
0.102
0.022
E1
2.13
2.29
0.084
0.090
0.014
0.019
e
1.50 BSC
0.059 BSC
0.44
0.014
0.017
e1
3.00 BSC
0.118 BSC
4.40
4.60
0.173
0.181
H
3.94
4.25
0.155
0.167
1.52
1.83
0.064
0.072
L
0.89
1.20
0.035
0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP19100CZ
Definitions
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or
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