AOSMD AOC2423 20v p-channel mosfet Datasheet

AOC2423
20V P-Channel MOSFET
General Description
Product Summary
The AOC2423 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V while retaining a 12V
VGS(MAX) rating.
VDS
ID (at VGS=-10V)
-20V
-2A
RDS(ON) (at VGS=-10V)
< 80mΩ
RDS(ON) (at VGS=-4.5V)
< 95mΩ
RDS(ON) (at VGS=-2.5V)
< 120mΩ
Typical ESD protection
MCSP 0.97x0.97A_4
Top View
HBM Class2
D
Bottom View
Top View
Bottom View
3
2
S
S
D
G
G
Pin1(G)
4
1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Source Current (DC) Note1
TA=25°C
Source Current (Pulse) Note2
TA=25°C
Power Dissipation Note1
Junction and Storage Temperature Range
Maximum
-20
Units
V
VGS
ID
±12
V
IDM
PD
-20
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Maximum Junction-to-Ambient A D Steady-State
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
Rev 0 : Oct. 2012
-2
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Typ
110
160
A
0.6
W
-55 to 150
°C
Max
140
200
Units
°C/W
°C/W
Page 1 of 5
AOC2423
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
TJ=125°C
VGS=-4.5V, ID=-1A
Gate Source Charge
Qgd
mΩ
mΩ
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
80
107
120
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Qg(4.5V) Total Gate Charge
65
86.5
92
IS=-1A,VGS=0V
Gate resistance
V
6.5
Diode Forward Voltage
Rg
µA
mΩ
VSD
Reverse Transfer Capacitance
±10
-1.2
95
VDS=-5V, ID=-1A
Crss
-0.85
µA
74
Forward Transconductance
Output Capacitance
Units
VGS=-2.5V, ID=-1A
gFS
Coss
-5
-0.5
VGS=-10V, ID=-1A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=-10V, VDS=-10V, ID=-1A
-0.74
S
-1
V
470
pF
92
pF
60
pF
12.5
Ω
10
nC
5
nC
2
nC
Gate Drain Charge
0.5
nC
tD(on)
Turn-On DelayTime
7.5
ns
10
ns
50
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
24
ns
trr
IF=-1A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-1A, dI/dt=100A/µs
8.5
ns
nC
Qrr
VGS=-10V, VDS=-10V, RL=10Ω,
RGEN=3Ω
3
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct. 2012
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Page 2 of 5
AOC2423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
-10V
-3.5V
VDS=-5V
15
-2.5V
10
-2V
15
-ID(A)
-ID (A)
-4.5V
10
5
5
125°C
VGS=-1.5V
25°C
0
0
0
1
2
3
4
0
5
140
1
1.5
2
2.5
3
Normalized On-Resistance
1.6
120
RDS(ON) (mΩ
Ω)
0.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-2.5V
100
VGS=-4.5V
80
60
VGS=-10V
40
VGS=-10V
ID=-1A
1.4
1.2
VGS=-4.5V
ID=-1A
1
VGS=-2.5V
ID=-1A
0.8
20
0
1
0
2
3
4
5
6
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
180
1.0E+01
ID=-1A
160
1.0E+00
1.0E-01
120
125°C
100
80
-IS (A)
RDS(ON) (mΩ
Ω)
140
125°C
1.0E-02
1.0E-03
25°C
60
25°C
1.0E-04
40
1.0E-05
20
0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Oct. 2012
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOC2423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=-10V
ID=-1A
8
Capacitance (pF)
-VGS (Volts)
600
6
4
Ciss
400
Coss
200
2
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
50
100.0
Power (W)
RDS(ON)
limited
1.0
TJ(Max)=150°C
TA=25°C
40
10µs
100µs
10.0
-ID (Amps)
Crss
0
1ms
30
20
10ms
0.1
10
TJ(Max)=150°C
TA=25°C
10s
DC
0
0.0
0.00001
0.01
0.1
1
-VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area
Figure 10: Single Pulse Power Rating Junction-toAmbient
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=200°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev 0: Oct. 2012
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Page 4 of 5
AOC2423
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 0: Oct. 2012
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5
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