IRFS510A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220F Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage Ο ID Continuous Drain Current (TC=25 C) Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ , TSTG TL V A 3.2 1 O 20 + _ 20 O 1 O 1 O O3 54 mJ 4.5 A 2 Ο PD Units 100 4.5 Ο Continuous Drain Current (TC=100 C) IDM Value Total Power Dissipation (TC=25 C) Linear Derating Factor A V 2.1 mJ 6.5 V/ns 21 W 0.14 Operating Junction and W/ C Ο - 55 to +175 Storage Temperature Range Ο Maximum Lead Temp. for Soldering C 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Rθ JC Junction-to-Case -- 6.98 RθJA Junction-to-Ambient -- 62.5 Units Ο C /W Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET IRFS510A Electrical Characteristics (TC=25 Cunless otherwise specified) Ο Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Breakdown Voltage Temp. Coeff. Gate Threshold Voltage 100 -- V V/ C ID=250 µ A -- 0.11 -- 2.0 -- 4.0 V See Fig 7 VDS=5V,ID=250 µ A VGS=20V -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 0.4 Ω VGS=10V,ID=2.25A 4 O Ω VDS=40V,ID=2.25A 4 O Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- 3.29 -- Ciss Input Capacitance -- 190 240 Coss Output Capacitance -- 55 65 Crss Reverse Transfer Capacitance -- 21 25 td(on) Turn-On Delay Time -- 10 30 Rise Time -- 14 40 Turn-Off Delay Time -- 28 70 Fall Time -- 18 50 Qg Total Gate Charge -- 8.5 12 Qgs Gate-Source Charge -- 1.6 -- Qgd Gate-Drain(“Miller”) Charge -- 4.1 -- tf Ο Gate-Source Leakage , Forward Forward Transconductance td(off) VGS=0V,ID=250 µ A -- gfs tr Test Condition nA µA pF VGS=-20V VDS=100V VDS=80V,TC=150 C Ο VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=5.6A, ns RG=24 Ω See Fig 13 4 O 5 O VDS=80V,VGS=10V, nC ID=5.6A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- ISM Pulsed-Source Current 1 O -- -- 20 VSD Diode Forward Voltage 4 O -- -- 1.5 V TJ=25 C,IS=4.5A,VGS=0V trr Reverse Recovery Time -- 85 -- ns TJ=25 C,IF=5.6A Qrr Reverse Recovery Charge -- 0.23 -- µC diF/dt=100A/ µ s 4.5 A Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=4mH, I AS=5.6A, V DD=25V, R G=27Ω , Starting T J =25 C O O3 ISD <_ 5.6A, di/dt <_ 250A/ µs, V DD <_ BVDSS , Starting T J =25 oC _2% 4 Pulse Test : Pulse Width = 250 µs, Duty Cycle < O Essentially Independent of Operating Temperature 5 O Integral reverse pn-diode in the MOSFET Ο Ο 4 O N-CHANNEL POWER MOSFET IRFS510A Fig 1. Output Characteristics Fig 2. Transfer Characteristics [A] 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ID , Drain Current ID , Drain Current [A] VGS Top : 101 100 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 10-1 10-1 100 101 175 oC 100 25 oC - 55 oC 10-1 101 2 3. 250 µs Pulse Test 4 6 8 10 VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current [A] VDS , Drain-Source Voltage [V] Fig 4. Source-Drain Diode Forward Voltage 0.8 0.6 VGS = 10 V 0.4 VGS = 20 V 0.2 @ Note : TJ = 25 oC IDR , Reverse Drain Current RDS(on) , [Ω] Drain-Source On-Resistance @ Notes : 1. VGS = 0 V 2. VDS = 40 V 5 10 15 100 20 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 175 oC 25 oC 10-1 0.4 0.0 0 101 ID , Drain Current [A] 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 210 C iss [V] 280 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VGS , Gate-Source Voltage Capacitance [pF] 350 C oss 140 @ Notes : 1. VGS = 0 V C rss 2. f = 1 MHz 70 00 10 101 VDS , Drain-Source Voltage [V] VDS = 20 V 10 VDS = 50 V VDS = 80 V 5 @ Notes : ID = 5.6 A 0 0 2 4 6 QG , Total Gate Charge [nC] 8 10 N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 1.2 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage IRFS510A 1.1 1.0 0.9 @ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 3.0 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 0.5 2. ID = 2.8 A 0.0 -75 200 -50 -25 TJ , Junction Temperature [ oC] 0 25 50 75 100 125 150 175 200 TJ , Junction Temperature [ oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature [A] ID , Drain Current 100 µs 101 1 ms 10 ms 100 ms DC 0 10 @ Notes : 1. TC = 25 oC 4 3 2 1 2. TJ = 175 oC 3. Single Pulse 100 101 0 25 102 50 75 100 125 Tc , Case Temperature [ oC] VDS , Drain-Source Voltage [V] Fig 11. Thermal Response Thermal Response 101 D=0.5 0.2 100 0.1 @ Notes : 1. Zθ J C (t)=6.98 0.05 o C/W Max. 2. Duty Factor, D=t1 /t2 10- 1 0.02 0.01 3. TJ M -TC =PD M *Zθ J C (t) PDM single pulse t1 θ 10-1 Z JC(t) , ID , Drain Current [A] 5 Operation in This Area is Limited by R DS(on) t2 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 150 175 N-CHANNEL POWER MOSFET IRFS510A Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (I G) Resistor Charge Current Sampling (I D) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated V DS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET IRFS510A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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