Hanbit HMF1M32M8G-70 Flash-rom module 4mbyte (1m x 32-bit), 72pin-simm, 5v Datasheet

HANBit
HMF1M32M8G
FLASH-ROM MODULE 4MByte (1M x 32-Bit), 72pin-SIMM, 5V
Part No. HMF1M32M8G
GENERAL DESCRIPTION
The HMF1M32M8G is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a
x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 72 -pin, single-sided, FR4-printed circuit
board. Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to
enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and
output..When FROM module is disable condition the module is becoming power standby mode, system designer can get low power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are
TTL-compatible.
PIN ASSIGNMENT
FEATURES
w Access time: 55, 70, 90 and 120ns
PIN
SYMBOL
PIN
w High-density 4MByte design
1
Vss
w High-reliability, low-power design
2
A3
3
w Single + 5V ± 0.5V power supply
SYMBOL
PIN
SYMBOL
25
Vcc
49
DQ17
26
DQ8
50
DQ18
A2
27
DQ9
51
DQ22
4
A1
28
DQ10
52
DQ21
w Easy memory expansion
5
A0
29
/CE_LM2
53
DQ20
w All inputs and outputs are TTL-compatible
6
Vcc
30
Vcc
54
DQ19
w FR4-PCB design
7
A11
31
/CE_LM1
55
Vcc
w Low profile 72-pin SIMM
8
/OE
32
DQ15
56
A15
9
A10
33
DQ14
57
A12
w Minimum 1,000,000 write/erase cycle
10
Vcc
34
DQ13
58
A7
w Sector erases architecture
11
/CE_LL2
35
DQ12
59
Vcc
w Sector group protection
12
/CE_LL1
36
DQ11
60
A8
w Temporary sector group unprotection
13
DQ7
37
A18
61
A9
14
DQ0
38
A16
62
DQ24
15
DQ1
39
Vss
63
DQ25
16
DQ2
40
A6
64
DQ26
17
DQ6
41
Vcc
65
/CE_UU2
18
DQ5
42
A5
66
/CE_UU1
19
DQ4
43
A4
67
DQ31
20
DQ3
44
Vcc
68
DQ30
21
/WE
45
/CE_UM2
69
DQ29
22
A17
46
/CE_UM1
70
DQ28
23
A14
47
DQ23
71
DQ27
24
A13
48
DQ16
72
Vss
OPTIONS
MARKING
w Timing
55ns access
-55
70ns access
-70
90ns access
-90
120ns access
-120
w Packages
72-pin SIMM
URL : www.hbe.co.kr
REV.02(August,2002)
M
1
72-PIN SIMM
TOP VIEW
HANBit Electronics Co., Ltd.
HANBit
HMF1M32M8G
FUNCTIONAL BLOCK DIAGRAM
DQ 0-DQ31
DQ 32
A0-A18
A19
A0-18
A0-18
A0-18
DQ0-7
DQ0-7
/WE
/WE
U1
/OE
U5
/OE
/CE
/CE
/CE-LL2
/CE-LL1
A0-18
A0-18
DQ8-15
DQ8-15
/WE
/WE
U2
/OE
U6
/OE
/CE
/CE
/CE-LM2
/CE-LM1
A0-18
A0-18
DQ16-23
DQ 16-23
/WE
/WE
U3
/OE
U7
/OE
/CE
/CE
/CE-UM2
/CE-UM1
A0-18
A0-18
DQ24-31
/WE
/OE
/OE
DQ 24-31
/WE
/WE
/WE
/OE
U4
/OE
U8
/CE
/CE
/CE-UU2
/CE-UU1
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Q
ACTIVE
WRITE or ERASE
X
L
L
D
ACTIVE
NOTE: X means don’t care
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REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
HMF1M32M8G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-2.0V to +7.0V
Voltage with respect to ground Vcc
VCC
-2.0V to +7.0V
Storage Temperature
TSTG
-65oC to +125oC
Voltage with respect to ground all other pins
Operating Temperature
TA
-55oC to +125 oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions ab ove those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
MIN
Vcc for ±5% device Supply Voltages
VCC
4.75V
5.25V
Vcc for ± 10% device Supply Voltages
Vcc
4.5V
5.5V
Ground
VSS
0
PARAMETER
TYP.
MAX
0
0
DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
Input Leakage Current
Vcc=Vcc max, V IN= GND to Vcc
IL1
±1.0
µA
Output Leakage Current
Vcc=Vcc max, VOUT= GND to Vcc
IL0
±1.0
µA
Output High Voltage
IOH = -2.5mA, Vcc = Vcc min
VOH
Output Low Voltage
IOL = 12mA, Vcc =Vcc min
VOL
0.45
V
Vcc Active Current for Read(1)
/CE = VIL, /OE=VIH,
ICC1
12
mA
/CE = VIL, /OE=VIH
ICC2
40
mA
/CE= VIH
ICC3
1.0
mA
4.2
V
2.4
V
Vcc Active Current for Program
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
VLKO
3.2
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
URL : www.hbe.co.kr
REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
HMF1M32M8G
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
TYP.
COMMENTS
MAX.
Excludes 00H programming
Sector Erase Time
-
1
8
sec
prior to erasure
Byte Programming Time
-
7
Excludes system-level
µs
300
overhead
Excludes system-level
Chip Programming Time
-
3.6
10.8
sec
overhead
CAPACITANCE
PARAMETER
PARAMETER
SYMBOL
DESCRIPTION
CIN
TEST SETUP
TYP.
MAX
UNIT
VIN = 0
4
6
pF
VOUT = 0
8
12
pF
VIN = 0
8
12
pF
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
o
Notes : Test conditions TA = 25 C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
DESCRIPTION
JEDEC
STANDARD
tAVAV
tRC
tAVQV
tACC
TEST SETUP
Read Cycle Time
-55
-90
UNIT
Min
55
90
ns
Max
55
90
ns
Max
55
90
ns
/CE = V IL
Address to Output Delay
/OE = VIL
tELQV
tCE
Chip Enable to Output Delay
/OE = VIL
tGLQV
tOE
Chip Enable to Output Delay
Max
30
35
ns
tEHQZ
tDF
Chip Enable to Output High-Z
Max
18
20
ns
tGHQZ
tDF
Output Enable to Output High-Z
Max
18
20
ns
tAXQX
tQH
Min
0
0
ns
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
Notes : Test Conditions : Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF
Input rise and fall times : 5 ns , In case of 55ns-5ns
Input pulse levels : 0 .45V to 2.4V, In case of 55ns- 0.0V-3.0V
Timing measurement reference level
URL : www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
HMF1M32M8G
Input : 0.8V, Incase of 55ns-1.5V
Output : 2.0V, In case of 55ns-1.5V
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER SYMBOLS
DESCRIPTION
-55
-90
UNIT
Min
55
90
ns
Address Setup Time
Min
0
0
ns
tAH
Address Hold Time
Min
40
45
ns
tDVWH
tDS
Data Setup Time
Min
25
45
ns
tWHDX
tDH
Data Hold Time
Min
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
ns
Read Recover Time Before Write
Min
0
0
ns
JEDEC
STANDARD
tAVAV
tWC
Write Cycle Time
tAVWL
tAS
tWLAX
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
30
45
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
1
1
sec
Vcc set up time
Min
50
50
µs
tVCS
Notes :
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
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REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
HANBit
HMF1M32M8G
u Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETER SYMBOLS
DESCRIPTION
-55
-90
UNIT
Min
55
90
ns
Address Setup Time
Min
0
0
ns
tAH
Address Hold Time
Min
40
45
ns
tDVEH
tDS
Data Setup Time
Min
25
45
ns
tEHDX
tDH
Data Hold Time
Min
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
0
0
ns
tWLEL
tWS
/WE Setup Time
Min
0
0
ns
tEHWH
tWH
/WE Hold Time
Min
0
0
ns
tELEH
tCP
/CE Pulse Width
Min
30
45
ns
tEHEL
tCPH
/CE Pulse Width High
Min
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note)
Typ
1
1
sec
JEDEC
STANDARD
tAVAV
tWC
Write Cycle Time
tAVEL
tAS
tELAX
Notes : This does not include the preprogramming time.
URL : www.hbe.co.kr
REV.02(August,2002)
6
HANBit Electronics Co., Ltd.
HANBit
HMF1M32M8G
u READ OPERATIONS TIMING
u RESET TIMING
URL : www.hbe.co.kr
REV.02(August,2002)
7
HANBit Electronics Co., Ltd.
HANBit
HMF1M32M8G
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
URL : www.hbe.co.kr
REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
HMF1M32M8G
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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REV.02(August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
HMF1M32M8G
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF1M32M8G
PACKAGE DIMENSIONS
108mm
3.2 mm
21.59 mm
6.35 mm
1
72
2.03 mm
1.02 mm
6.35 mm
1.27 mm
3.34 mm
95.25 mm
2.54 mm
MIN
0.25 mm MAX
1.29±0.08 mm
Gold: 1.04±0.10 mm
1.27
Solder: 0.914±0.10 mm
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF1M32M8G-55
4MByte
1M×32bit
72pin-SIMM
HMF1M32M8G-70
4MByte
1M×32bit
HMF1M32M8G-90
4MByte
HMF1M32M8G-120
4MByte
URL : www.hbe.co.kr
REV.02(August,2002)
Component
Vcc
SPEED
8EA
5.0V
55ns
72pin-SIMM
8EA
5.0V
70ns
1M×32bit
72pin-SIMM
8EA
5.0V
90ns
1M×32bit
72pin-SIMM
8EA
5.0V
120ns
11
Number
HANBit Electronics Co., Ltd.
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