MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS18KM-10A FS18KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS18KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀ ➁ ➂ ● 10V DRIVE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) .............................................................. 0.40Ω ● ID ......................................................................................... 18A 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA PD Avalanche current (Pulsed) Maximum power dissipation Tch Tstg Channel temperature Storage temperature Viso Isolation voltage AC for 1minute, Terminal to case Weight Typical value — VGS = 0V VDS = 0V L = 200µH Ratings Unit 500 ±30 V V 18 54 A A 18 40 A W –55 ~ +150 –55 ~ +150 °C °C 2000 V 2.0 g Sep. 2001 MITSUBISHI Nch POWER MOSFET FS18KM-10A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS V (BR) GSS Drain-source breakdown voltage Gate-source breakdown voltage I GSS I DSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance t d (on) tr Turn-on delay time Rise time t d (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) Thermal resistance Limits Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V Typ. Max. 500 ±30 — — — — V V — — — — ±10 1 µA mA 2.5 3.0 3.5 V — — 0.30 2.70 0.40 3.60 Ω V 9.6 — 16.0 2350 — — S pF — — 240 50 — — pF pF — — 35 55 — — ns ns — 310 — ns — — 70 1.5 — 2.0 ns V — — 3.13 °C/W ID = 9A, VGS = 10V ID = 9A, VGS = 10V ID = 9A, VDS = 10V Unit Min. VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 9A, VGS = 10V, R GEN = RGS = 50Ω IS = 9A, VGS = 0V Channel to case PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 40 30 20 10 0 0 50 50 100 150 7 5 3 2 101 7 5 3 2 100µs 100 10 ms 1ms 7 5 3 2 TC = 25°C Single Pulse 10–1 7 5 3 2 200 tw = 10µs DC 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 20 PD = 40W VGS = 20V,10V,6V 5V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) VGS = 20V,10V,8V,6V 40 TC = 25°C Pulse Test 30 20 5V 10 16 12 TC = 25°C Pulse Test 8 4 PD = 40W 4V 0 0 5 7 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 4V 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS18KM-10A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 32 24 ID = 35A 16 25A 8 0 1.0 TC = 25°C Pulse Test 18A 9A 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 0.8 0.6 VGS = 10V 0.4 VGS = 20V 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 40 32 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 24 16 8 0 TC = 25°C VDS = 10V Pulse Test 0 4 8 12 16 3 2 TC = 25°C,75°C,125°C 100 7 5 VDS = 10V Pulse Test 10–1 0 10 20 2 5 7 101 3 2 3 5 7 102 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 Ciss 103 7 5 3 2 Coss 102 7 5 TCh = 25°C VGS = 0V f = 1MHZ Crss 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 5 GATE-SOURCE VOLTAGE VGS (V) 3 2 10-1 101 3 2 104 7 5 3 2 3 2 TCh = 25°C VGS = 10V VDD = 200V RGEN = RGS = 50Ω td(off) 3 2 102 tf 7 5 tr 3 td(on) 2 101 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS18KM-10A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 100V 200V 12 400V 8 4 TCh = 25°C ID = 18A 0 40 80 120 160 75°C 16 8 0 1.6 0.8 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) 0.4 125°C GATE CHARGE Qg (nC) VGS = 10V 7 ID = 9A 5 Pulse Test 1.4 TC = 25°C 24 0 101 10–1 VGS = 0V Pulse Test 32 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 40 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 = 0.5 100 = 0.2 7 5 = 0.1 3 2 10–1 = 0.05 PDM = 0.02 7 5 3 2 Single Pulse tw = 0.01 T D= tw T 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001