DIODES ZXT11N20DFTC

ZXT11N20DF
SuperSOT4™
20V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY
VCEO=20V; RSAT = 40m ; IC= 2.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
SOT23
FEATURES
•
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
hFE characterised up to 5A
•
IC=2.5A Continuous Collector Current
•
SOT23 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Power switches
•
E
C
Motor control
B
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT11N20DFTA
7
8mm embossed
3000 units
ZXT11N20DFTC
13
8mm embossed
10000 units
DEVICE MARKING
2N0
ISSUE 1 - DECEMBER 1999
1
Top View
ZXT11N20DF
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V CBO
40
V
Collector-Emitter Voltage
V CEO
20
V
Emitter-Base Voltage
V EBO
7.5
V
Peak Pulse Current
I CM
5
A
Continuous Collector Current
IC
2.5
A
Base Current
IB
500
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R θJA
200
°C/W
Junction to Ambient (b)
R θJA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
ISSUE 1 - DECEMBER 1999
2
ZXT11N20DF
TYPICAL CHARACTERISTICS
0.7
Max Power Dissipation (W)
IC Collector Current (A)
10
DC
1
1s
100ms
10ms
100m
1ms
100µs
Single Pulse Tamb=25°C
10m
100m
1
10
VCE Collector-Emitter Voltage (V)
Thermal Resistance (°C/W)
200
175
150
D=0.5
100
Single Pulse
D=0.2
50
D=0.05
25
0
100µ
D=0.1
1m
10m
100m
1
10
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
Derating Curve
225
75
0.5
Temperature (°C)
Safe Operating Area
125
0.6
100
1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 1 - DECEMBER 1999
3
120
140
160
ZXT11N20DF
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V (BR)CBO
Collector-Emitter Breakdown
Voltage
TYP.
UNIT
CONDITIONS.
40
V
I C =100␮A
V (BR)CEO
20
V
I C =10mA*
Emitter-Base Breakdown Voltage
V (BR)EBO
7.5
V
I E =100␮A
Collector Cut-Off Current
I CBO
100
nA
V CB =32V
Emitter Cut-Off Current
I EBO
100
nA
V EB =6V
Collector Emitter Cut-Off Current
I CES
100
nA
V CES =32V
Collector-Emitter Saturation
Voltage
V CE(sat)
12
100
60
130
mV
mV
mV
mV
I C =0.1A, I B =10mA*
I C =1A, I B =10mA*
I C =1A, I B =100mA*
I C =2.5A, I B =250mA*
Base-Emitter Saturation Voltage
V BE(sat)
0.9
1.0
V
I C =2.5A, I B =250mA*
Base-Emitter Turn-On Voltage
V BE(on)
0.85
1.0
V
I C =2.5A, V CE =2V*
Static Forward Current Transfer
Ratio
h FE
Transition Frequency
fT
Output Capacitance
C obo
Turn-On Time
Turn-Off Time
7
65
40
90
200
300
250
150
100
MAX.
I C =10mA, V CE =2V*
I C =100mA, V CE =2V*
I C =1A, V CE =2V*
I C =3A, V CE =2V*
I C =5A, V CE =2V*
900
160
MHz
I C =50mA, V CE =10V
f=50MHz
20
pF
V CB =10V, f=1MHz
t (on)
122
ns
t (off)
295
ns
V CC =10V, I C =2A
I B1 =I B2 =20mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - DECEMBER 1999
4
ZXT11N20DF
TYPICAL CHARACTERISTICS
0.25
IC/IB=50
Tamb=25°C
100m
0.15
VCE(SAT) (V)
VCE(SAT) (V)
0.20
100°C
0.10
25°C
0.05
IC/IB=100
10m
IC/IB=50
-55°C
0.00
1m
10m
100m
1
IC Collector Current (A)
IC/IB=10
1m
1m
10
10m
1.0
25°C
-55°C
0.4
0.2
10m
100m
1
10
0.6
100°C
100m
VBE(SAT) v IC
VCE=2V
-55°C
25°C
0.6
100°C
0.4
10m
100m
1
IC Collector Current (A)
10m
1
IC Collector Current (A)
hFE v IC
VBE(ON) (V)
25°C
1m
IC Collector Current (A)
1m
0.8
0.4
0.0
1m
0.8
IC/IB=50
-55°C
VBE(SAT) (V)
Normalised Gain
VCE=2V
0.6
1.0
10
100°C
1.0
0.8
1
VCE(SAT) v IC
VCE(SAT) v IC
1.2
100m
IC Collector Current (A)
10
VBE(ON) v IC
ISSUE 1 - DECEMBER 1999
5
10
ZXT11N20DF
PAD LAYOUT DETAILS
N
PACKAGE DIMENSIONS
DIM Millimetres
Inches
Min
Max
Min
Max
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
C
–
1.10
–
0.043
D
0.37
0.53
0.0145
F
0.085
0.15
0.0033
G
NOM 1.9
K
0.01
0.10
0.0004
L
2.10
2.50
0.0825
N
NOM 0.95
0.021
0.0059
NOM 0.075
0.004
0.0985
NOM 0.037
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
© Zetex plc 1999
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - DECEMBER 1999
6