IRF IRFHM4226TRPBF Control or synchronous mosfet for high frequency buck converter Datasheet

FastIRFET™
IRFHM4226TRPbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
25
V
2.2
Top View
m
3.3
Qg (typical)
16
nC
ID
(@TC (Bottom) = 25°C)
40
A
D 5
4 G
D 6
3 S
D 7
2 S
D 8
1 S
PQFN 3.3 x 3.3 mm
Applications

Control or Synchronous MOSFET for high frequency buck converters
Features
Low RDSon (<2.2m)
Low Charge (typical 16nC)
Low Thermal Resistance to PCB (<3.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Base part number
Package Type
IRFHM4226TRPbF
PQFN 3.3mm x 3.3mm
Benefits
Lower Conduction Losses
Low Switching Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM4226TRPbF
Absolute Maximum Ratings
Parameter
Max.
Units
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
28
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
105
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
67
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current 
PD @TA = 25°C
Power Dissipation 
2.7
PD @TC(Bottom) = 25°C
Power Dissipation 
39
TJ
Operating Junction and
TSTG
Storage Temperature Range
Linear Derating Factor 
A
40
420
W
0.021
W/°C
-55 to + 150
°C
Notes  through  are on page 8
1
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December 5, 2013
IRFHM4226TRPbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
136
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
1.7
2.6
1.6
-5.7
–––
–––
–––
–––
32
16
3.6
2.0
5.8
4.6
7.8
15
1.1
11
35
14
8.1
2000
570
150
Max.
–––
–––
2.2
3.3
2.1
–––
1.0
100
-100
–––
–––
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 30A 
m
VGS = 4.5V, ID = 30A 
V
VDS = VGS, ID = 50µA
mV/°C
µA VDS = 20V, VGS = 0V
VGS = 20V
nA
VGS = -20V
S
VDS = 10V, ID = 30A
nC VGS = 10V, VDS = 13V, ID = 30A
nC
nC

VDS = 13V
VGS = 4.5V
ID = 30A
VDS = 16V, VGS = 0V
ns
VDD = 13V, VGS = 4.5V
ID = 30A
RG=1.8
pF
VGS = 0V
VDS = 13V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy 
Typ.
–––
Max.
124
Units
mJ
IAR
Avalanche Current 
–––
30
A
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode) 
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
Typ.
Max.
–––
–––
40
Units
D
A
–––
–––
420
–––
–––
–––
–––
16
28
1.0
24
42
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 30A, VGS = 0V 
TJ = 25°C, IF = 30A, VDD = 13V
di/dt = 450A/µs 
G
S
V
ns
nC
Thermal Resistance
Parameter
RJC (Bottom)
Junction-to-Case 
Typ.
–––
RJC (Top)
Junction-to-Case 
–––
35
RJA
Junction-to-Ambient 
–––
47
RJA (<10s)
Junction-to-Ambient 
–––
30
2
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Max.
3.2
Units
°C/W
December 5, 2013
IRFHM4226TRPbF
1000
1000
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
2.75V
BOTTOM
2.75V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
VDS = 10V
60µs PULSE WIDTH
ID = 30A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
0.1
1.0
2.0
3.0
4.0
5.0
6.0
-60 -40 -20 0
7.0
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORTED
C rss = Cgd
VGS, Gate-to-Source Voltage (V)
ID= 30A
C oss = C ds + C gd
10000
Ciss
Coss
1000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Crss
12.0
VDS= 20V
10.0
VDS= 13V
VDS= 5.0V
8.0
6.0
4.0
2.0
0.0
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
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0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Datasheet Feedback
December 5, 2013
IRFHM4226TRPbF
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 150°C
100
TJ = 25°C
10
1
VGS = 0V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1msec
10
Limited by Package
10msec
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
0.2
100µsec
100
0.1
1.8
10
VDS , Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
2.8
VGS(th), Gate threshold Voltage (V)
120
Limited by package
100
ID, Drain Current (A)
1
80
60
40
20
2.4
2.0
1.6
1.2
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 10mA
0.8
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
TJ , Temperature ( °C )
TC , Case Temperature (°C)
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
Thermal Response ( ZthJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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December 5, 2013
8.0
600
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m)
IRFHM4226TRPbF
ID = 30A
6.0
TJ = 125°C
4.0
2.0
TJ = 25°C
0.0
500
400
300
200
100
0
2
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On– Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Avalanche Current (A)
ID
5.1A
7.2A
BOTTOM 30A
TOP
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Single Avalanche Current vs. pulse Width
5
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IRFHM4226TRPbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 16a. Unclamped Inductive Test Circuit
Fig 17a. Switching Time Test Circuit
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 18. Gate Charge Test Circuit
6
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Qgd
Qgodr
Fig 19. Gate Charge Waveform
Datasheet Feedback
December 5, 2013
IRFHM4226TRPbF
PQFN 3.3 x 3.3 Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3 x 3.3 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFHM4226TRPbF
PQFN 3.3 x 3.3 Tape and Reel
Note:
1. Dimension measured on the bottomof the cavity.
2. Pitch tolerance over any 10 pitches = ±0.008 [0.2]
3. ESDRequirement: 0±200volts
4. Surface Resistivity = 10 to 10 ohms per square inch
5. Roll should contain splice-free material
6.
Engrave RESY symbol every 100 sprockets
(about 15.75 [400]
PS ( conformsupplier specification)
camber
The camber shall not exceed in 1mm/250
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
MSL1
(per JEDEC J-STD-020D††)
PQFN 3.3mm x 3.3mm
Moisture Sensitivity Level
Yes
RoHS Compliant
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25°C, L = 0.275mH, RG = 50, IAS = 30A.
 Pulse width  400µs; duty cycle  2%.
 R is measured at TJ of approximately 90°C.
 When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
 Calculated continuous current based on maximum allowable junction temperature.
 Current is limited to 40A by source bonding technology.
 Pulse drain current is limited at 160A by source bonding technology.
Revision History
Date
Comments
08/07/13

Added "FastIRFET™" above part number, on page1
12/5/13

Updated fig.14, limit curve to 40A package limitation current, on page 5
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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December 5, 2013
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