A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -20V • RSAT = 64mΩ • IC = -3.5A Schottky Diode • VR = 40V • VF= 500mv (@1A) • IC = 1A IC = -3.5A Continuous Collector Current Low Saturation Voltage (-220mV @ -1A) hFE characterized up to -6A Low VF, fast switching Schottky Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1) “Green” Devices (Note 2) Case: DFN3020B-8 Terminals: Pre-Plated NiPdAu leadframe Nominal package height: 0.8mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate) Applications • • • • DC – DC Converters Charging circuits Mobile phones Motor control DFN3020B-8 Device symbol Top View Pin Configuration Ordering Information Product ZXTPS718MCTA Notes: Status Active Package DFN3020B-8 Marking 2S1 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website https://www.diodes.com Marking Information 2S1 = Product type Marking Code Dot Denotes Pin 1 ZXTPS718MC Document Number DS31937 Rev. 2 - 2 1 of 10 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS718MC Maximum Ratings, Transistor Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Note a and f) Base Current Symbol VCBO VCEO VEBO ICM IC IB Limit -25 -20 -7.5 -6 -3.5 1 Unit V V V A A A Symbol Value 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 83 51 125 111 73.5 41.7 150 -55 to +150 Unit W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C °C/W °C/W °C/W °C/W °C/W °C/W °C °C Thermal Characteristics, Transistor Characteristic Power Dissipation at TA = 25°C (Notes a and f) Linear Derating Factor Power Dissipation at TA = 25°C (Notes b and f) Linear Derating Factor Power Dissipation at TA = 25°C (Notes c and f) Linear Derating Factor Power Dissipation at TA = 25°C (Notes d and f) Linear Derating Factor Power Dissipation at TA = 25°C (Notes d and g) Linear Derating Factor Power Dissipation at TA = 25°C (Notes e and g) Linear Derating Factor Junction to Ambient (Notes a and f) Junction to Ambient (Notes b and f) Junction to Ambient (Notes c and f) Junction to Ambient (Notes d and f) Junction to Ambient (Notes d and g) Junction to Ambient (Notes e and g) Junction Temperature Storage Temperature Range Notes: PD PD PD PD PD PD RθJA RθJA RθJA RθJA RθJA RθJA TJ TSTG a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only. d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. f. For a dual device with one active die. g. For dual device with 2 active die running at equal power. ZXTPS718MC Document Number DS31937 Rev. 2 - 2 2 of 10 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS718MC Thermal Characteristics and Derating information, Transistor ZXTPS718MC Document Number DS31937 Rev. 2 - 2 3 of 10 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS718MC Maximum Ratings, Schottky Diode Parameter Continuous Reverse Voltage Forward Voltage @ IF = 1000mA (typ) Forward Current Average Peak Forward Current D=50% Non Repetitive Forward Current t≤ 100µs t≤ 10ms Symbol VR VF IF IFAV IFSM Limit 40 425 1850 3 12 7 Unit V mV mA A A A Value 1.2 12 2 20 0.8 8 0.9 9 1..36 13.6 2.4 24 83 51 125 111 73.5 41.7 125 -55 to +150 Unit W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C °C/W °C/W °C/W °C/W °C/W °C/W °C °C Thermal Characteristics, Schottky Diode Characteristic Power Dissipation at TA = 25°C (Notes a and f) Linear Derating Factor Power Dissipation at TA = 25°C (Notes b and f) Linear Derating Factor Power Dissipation at TA = 25°C (Notes c and f) Linear Derating Factor Power Dissipation at TA = 25°C (Notes d and f) Linear Derating Factor Power Dissipation at TA = 25°C (Notes d and g) Linear Derating Factor Power Dissipation at TA = 25°C (Notes e and g) Linear Derating Factor Junction to Ambient (Notes a and f) Junction to Ambient (Notes b and f) Junction to Ambient (Notes c and f) Junction to Ambient (Notes d and f) Junction to Ambient (Notes d and g) Junction to Ambient (Notes e and g) Junction Temperature Storage Temperature Range Notes: Symbol PD PD PD PD PD PD RθJA RθJA RθJA RθJA RθJA RθJA TJ TSTG a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only. d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. f. For a dual device with one active die. g. For dual device with 2 active die running at equal power. ZXTPS718MC Document Number DS31937 Rev. 2 - 2 4 of 10 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS718MC Thermal Characteristics and Derating information, Schottky Diode ZXTPS718MC Document Number DS31937 Rev. 2 - 2 5 of 10 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS718MC Electrical Characteristics, Transistor @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES Min -25 -20 -7.5 - Typ -35 -25 -8.5 - Max -25 -25 -25 Unit V V V nA nA nA hFE 300 300 150 15 475 450 230 30 - - Collector-Emitter Saturation Voltage (Note 3) VCE(sat) - -19 -170 -190 -240 -225 -30 -220 -250 -350 -300 mV Base-Emitter Turn-On Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Output Capacitance VBE(on) VBE(sat) Cobo - -0.87 -1.10 21 -0.95 -1.075 30 V V pF Transition Frequency fT 150 180 - MHz Turn-on Time ton - 40 - ns VCC = -10V, IC = -1A Turn-off Time toff - 670 - ns IB1 = IB2 = -50mA Static Forward Current Transfer Ratio (Note 3) Test Condition IC = -100µA IC = -10mA IE = -100µA VCB = -20V VEB = -6V VCES = -16V IC = -10mA, VCE = -2V IC = -100mA, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC = -0.1A, IB = -10mA IC = -1A, IB = -20mA IC = -1.5A, IB = -50mA IC = -2.5A, IB = -150mA IC = -3.5A, IB = -350mA IC = -3.5A, VCE = -2V IC = -3.5A, IB = -350mA VCB = -10V. f = 1MHz VCE = -10V, IC = -50mA, f = 100MHz Electrical Characteristics, Schottky Diode @TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage Symbol V(BR)R Min 40 Typ 60 Max - Unit V Forward Voltage (Note 3) VF - 240 265 305 355 390 425 495 420 270 290 340 400 450 500 600 - mV Reverse Current Diode Capacitance IR CD - 50 25 100 - µA pF Reverse Recovery Time trr - 12 - ns Notes: Test Condition IR = -300µA IF = 50mA IF = 100mA IF = 250mA IF = 500mA IF = 750mA IF = 1000mA IF = 1500mA IF = 1000mA, TA = 100°C VR = 30V VR = 25V, f = 1MHz switched from IF = 500mA to IR = 500mA Measured at IR = 50mA 3. Measured under pulsed conditions. ZXTPS718MC Document Number DS31937 Rev. 2 - 2 6 of 10 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS718MC Typical Characteristics, Transistor ZXTPS718MC Document Number DS31937 Rev. 2 - 2 7 of 10 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS718MC Typical Characteristics, Schottky Diode ZXTPS718MC Document Number DS31937 Rev. 2 - 2 8 of 10 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS718MC Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 b Z e L Suggested Pad Layout C X Y1 G1 G Y2 Y X1 ZXTPS718MC Document Number DS31937 Rev. 2 - 2 Dimensions C G G1 X X1 Y Y1 Y2 9 of 10 www.diodes.com Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365 January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTPS718MC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com ZXTPS718MC Document Number DS31937 Rev. 2 - 2 10 of 10 www.diodes.com January 2010 © Diodes Incorporated