NTE2538 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Collector Dissipation, PD TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 400V, IE = 0 – – 10 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 10 µA DC Current Gain hFE VCE = 5V, IC = 3.2A 15 – 50 VCE = 5V, IC = 16A 10 – – VCE = 5V, IC = 10mA 10 – – Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 2A – – 0.8 V Base–Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 2A – – 1.5 V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Gain–Bandwidth Product Output Capacitance Collector–Base Breakdown Voltage Symbol fT Cob Test Conditions Min Typ Max Unit VCE = 10V, IC = 2A – 20 – MHz VCB = 10V, f = 1MHz – 230 – pF 500 – – V 400 – – V 7 – – V 400 – – V – – 0.5 µs – – 2.5 µs – – 0.3 µs V(BR)CBO IC = 1mA, IE = 0 Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞ Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 Collector–Emitter Sustaining Voltage VCEX(sus) IC = 8A, IB1 = 0.8A, IB2 = –3.2A, L = 200µH Clamped Turn–On Time ton Storage Time tstg Fall Time IC = 12A, IB1 = 2.4A, IB2 = –4.8A, RL = 10Ω, Ω VCC = 200V tf .134 (3.4) Dia .221 (5.6) .123 (3.1) .630 (16.0) .315 (8.0) .866 (22.0) B C E .158 (4.0) .804 (20.4) .215 (5.45) .040 (1.0)