SAVANTIC BUW11A Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BUW11 BUW11A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage ;high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
BUW11
BUW11A
BUW11
BUW11A
Open emitter
Open base
Open collector
VALUE
850
1000
400
450
UNIT
V
V
9
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
2
A
IBM
Base current-peak
4
A
PT
Total power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
MAX
UNIT
1.25
K/W
SavantIC Semiconductor
Product Specification
BUW11 BUW11A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
PARAMETER
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
CONDITIONS
BUW11
MIN
TYP.
MAX
400
V
IC=0.1A ; IB=0; L=25mH
450
BUW11A
BUW11
UNIT
IC=3A; IB=0.6A
BUW11A
IC=2.5A; IB=0.5A
BUW11
IC=3A; IB=0.6A
BUW11A
IC=2.5A; IB=0.5A
1.5
V
1.4
V
ICES
Collector cut-off current
VCE=Rated VCES; VBE=0
Tj=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE-1
DC current gain
IC=5mA ; VCE=5V
10
35
hFE-2
DC current gain
IC=0.5A ; VCE=5V
10
35
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
For BUW11F
IC=3A ;IB1=-IB2=0.6A
For BUW11AF
IC=2.5A ;IB1=-IB2=0.5A
2
1.0
µs
4.0
µs
0.8
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW11 BUW11A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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