Panasonic OH10004 Gaas hall device Datasheet

GaAs Hall Devices
OH10004
GaAs Hall Device
Unit : mm
Magnetic sensor
+ 0.2
2.8 − 0.3
1.5 ± 0.2
■ Applications
• Various hall motor (VCR, phonograph, VD, CD, and FDD)
• Automotive equipment
• Industrial equipment
Symbol
Rating
Unit
Control voltage
VC
12
V
Power dissipation
PD
150
mW
Operating ambient temperature
Topr
−30 to +125
°C
Storage temperature
Tstg
−55 to +125
°C
+ 0.1
1.45 ± 0.2
0.95 0.95
3
2
+ 0.1
0 to 0.1
0.4 ± 0.2
0.4 ± 0.2
φ 1.0 ± 0.025
1 : VH Output (−) side
2 : VC Input (−) side
3 : VH Output (+) side
4 : VC Input (+) side
Mini Type Package (4-pin) with positioning projection
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1
0.5 R
0.8
+ 0.1
0.5 ± 0.1 1.1 − 0.05
2.9 ± 0.2
1.9 ± 0.2
4
0.65 ± 0.15
0.4 − 0.05
(0.5 R)
0.65 ± 0.15
• Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)
• Input resistance: typ. 0.85 kΩ
• Satisfactory linearity of GaAs hall voltage with respect to the
magnetic field
• Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C
• Mini type (4-pin) package with positioning projection. Allowing
automatic insertion through the magazine package.
0.16 − 0.06
■ Features
Marking Symbol: 4
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Hall voltage*1, 4
Unequilibrium
Conditions
VH
ratio*2, 4
VC = 6 V, B = 0.1 T
VHO/VH
Input resistance
Typ
Max
Unit
130
150
170
mV
0.50
0.85
±12
VC = 6 V, B = 0 T/B = 0.1 T
RIN
Output resistance
Min
IC = 1 mA, B = 0 T
ROUT
IC = 1 mA, B = 0 T
Temperature coefficient of hall voltage
β
IC = 6 mA, B = 0.1 T
Temperature coefficient of input
resistance
α
IC = 1 mA, B = 0 T
Linearity of hall voltage*3
γ
IC = 6 mA, B = 0.1 T/0.5 T
%
kΩ
5
kΩ
−0.06
%/°C
0.3
%/°C
2
%
VH++VH−
2
*2 : Unequilibrium ratio is a percentage of VHO with respect to VH.
*3 : The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured
respectively at B = 0.1 T and 0.5 T to their average. That is,
KH5−KH1
VH
γ=
(the cumulative sensitivity KH =
)
1/2(KH1+KH5)
IC・B
*4 : VH, VHO/VH rank classification
Note) *1 : VH =
Class
HQ
HR
IQ
IR
VH (mV)
130 to 158
142 to 170
130 to 158
142 to 170
VHO/VH (%)
Marking Symbol
−5 to +5
4HQ
+2 to +12
4HR
4IQ
4IR
KQ
KR
130 to 158 142 to 170
−2 to −12
4KQ
4KR
1
OH10004
GaAs Hall Devices
PD  T a
RIN  Ta
VH  Ta
200
1 600
240
B = 1 kG
IC = 6 mA
120
100
80
60
40
Input resistance RIN (Ω)
140
160
120
80
0
20
40
60
0
80 100 120 140 160
−40
0
40
80
600
400
0
120
800
600
400
0.6
0.8
1.0
1.2
200
160
120
80
0
2
4
6
8
10
12
14
■ Typical Drive Circuit
+9 V
+9 V
4
3
−
1
+
2
−9 V
−9 V
240
200
160
120
80
40
Control current IC (mA)
Magnetic flux density B (T)
120
B = 1 kG
Ta = 25°C
280
240
0
0.4
80
VH  VC
40
200
40
320
Hall voltage VH (mV)
Hall voltage VH (mV)
1 000
0.2
0
Ambient temperature Ta (°C)
B = 1 kG
Ta = 25°C
280
1 200
0
−40
VH  IC
320
VC = 6 V
Ta = 25°C
1 400
Hall voltage VH (mV)
800
Ambient temperature Ta (°C)
VH  B
1 600
2
1 000
200
Ambient temperature Ta (°C)
0
1 200
40
20
0
B=0
IC = 1 mA
1 400
200
160
Hall voltage VH (mV)
Power dissipation PD (mW)
180
−V
+V
16
0
0
2
4
6
8
10
12
14
Control voltage VC (V)
16
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