DMN3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072g (approximate) SOP-8L S D S D S D G D TOP VIEW Maximum Ratings TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Units V V IDM Value 30 ±20 16 13 64 Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Symbol PD RθJA Value 2.5 50 Unit W °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VGSS Steady State TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 3) A A Thermal Characteristics Notes: 1. 2. 3. 4. Device mounted on 2 oz. Copper pads on FR-4 PCB, with RθJA = 50°C No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN3010LSS Document number: DS31259 Rev. 6 - 2 1 of 5 www.diodes.com November 2008 © Diodes Incorporated DMN3010LSS @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.1 RDS (ON) ⎯ 2.0 9 13 V Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS gfs VSD ⎯ 0.5 ⎯ ⎯ ⎯ 16 ⎯ ⎯ 1.2 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 16A VGS = 4.5V, ID = 10A VDS = 10V, ID = 12A VGS = 0V, IS = 16A Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 2096 329 258 1.2 ⎯ ⎯ ⎯ ⎯ pF pF pF Ω Qg ⎯ 22.4 43.7 ⎯ Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 5.5 12.6 7.11 10.3 58.3 32.1 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: mΩ Test Condition VDS = 15V, VGS = 0V f = 1.0MHz VGS = 0V, f = 1MHz nC VDS = 15V, VGS = 4.5V, ID = 16A VDS = 15V, VGS = 10.0V, ID = 16A VDS = 15V, VGS = 10V, ID = 16A VDS = 15V, VGS = 10V, ID = 16A ns VGS = 10V, VDS = 15V, RD = 15Ω, RG = 6Ω 5. Short duration pulse test used to minimize self-heating effect. 20 20 18 VGS = 10V VGS = 4.5V 18 16 14 IS, SOURCE CURRENT (A) 16 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 3.0V 12 10 8 6 4 14 12 T A = 150°C 10 8 TA = 125°C TA = 85°C 6 TA = 25°C 4 2 VGS = 2.5V 2 VGS = 1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN3010LSS Document number: DS31259 Rev. 6 - 2 TA = -55°C 5 2 of 5 www.diodes.com 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 2 Source Current vs. Source-Drain Voltage November 2008 © Diodes Incorporated DMN3010LSS 1.6 20 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (mΩ) 16 TA = 150°C TA = 125°C 14 TA = 85°C 12 TA = 25°C 10 8 6 TA = -55°C 0 2 1.3 1.2 VGS = 4.5V ID = 10A 1.1 1.0 0.9 0.8 0.6 -50 4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 On-Resistance Variation with Temperature 10,000 2.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) C, CAPACITANCE (pF) VGS = 10V ID = 16A 1.4 0.7 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 3 Drain-Source On-Resistance vs. Drain Current Ciss 1,000 C oss Crss 100 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 30 2.2 1.9 ID = 250µA 1.6 1.3 1 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature 100 10 IS, SOURCE CURRENT (A) NEW PRODUCT 1.5 18 1 TA = 150°C 0.1 TA = 125°C TA = 85°C 0.01 TA = 25°C 0.001 0.0001 TA = -55°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current DMN3010LSS Document number: DS31259 Rev. 6 - 2 1 3 of 5 www.diodes.com November 2008 © Diodes Incorporated DMN3010LSS NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 88°C/W D = 0.02 P(pk) 0.01 D = 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 8 Transient Thermal Response Ordering Information (Note 6) Part Number DMN3010LSS-13 Notes: Case SOP-8L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo N3010LS Part no. YY WW 1 4 Xth week: 01~52 Year : "07" =2007 "08" =2008 0.254 Package Outline Dimensions E1 E A1 L GAUGE PLANE SEATING PLANE DETAIL A 7°~9° h 45° A2 A A3 DETAIL A SOP-8L Dim Min Max A 1.75 A1 0.08 0.25 A2 1.30 1.50 A3 0.20 Typ. b 0.3 0.5 D 4.80 5.30 E 5.79 6.20 E1 3.70 4.10 e 1.27 Typ. h 0.35 L 0.38 1.27 0° 8° θ All Dimensions in mm b e D DMN3010LSS Document number: DS31259 Rev. 6 - 2 4 of 5 www.diodes.com November 2008 © Diodes Incorporated DMN3010LSS Suggested Pad Layout NEW PRODUCT X Z Dimensions Z C X Y Value (in mm) 5.1 1.27 0.41 1.0 C Y IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN3010LSS Document number: DS31259 Rev. 6 - 2 5 of 5 www.diodes.com November 2008 © Diodes Incorporated