PHILIPS BLV920 Uhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D076
BLV920
UHF power transistor
Product specification
Supersedes data of 1995 Apr 10
1997 Nov 17
Philips Semiconductors
Product specification
UHF power transistor
BLV920
FEATURES
DESCRIPTION
• Internal input matching to achieve high power gain and
easy design of wideband circuits
NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor is
encapsulated in a 6-lead SOT171A flange envelope with a
ceramic cap. All leads are isolated from the flange.
• Emitter ballasting resistors for an optimum temperature
profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Base station transmitters in the 820 to 960 MHz range.
handbook, halfpage
2
4
c
6
PINNING - SOT171A
PIN
SYMBOL
1
e
emitter
2
e
emitter
3
b
base
4
c
collector
5
e
emitter
6
e
emitter
b
DESCRIPTION
1
3
e
5
Top view
MAM141
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
CW, class-AB
960
26
20
≥10
≥ 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Nov 17
2
Philips Semiconductors
Product specification
UHF power transistor
BLV920
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
70
V
VCEO
collector-emitter voltage
open base
−
30
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
3
A
IC(AV)
average collector current
−
3
A
Ptot
total power dissipation
−
50
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
up to Tmb = 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to
mounting base
Rth mb-h
thermal resistance from mounting
base to heatsink
VALUE
Ptot = 49 W; Tmb = 25 °C
3.5
K/W
0.4
K/W
MLC669
10
MLC670
80
handbook, halfpage
UNIT
handbook, halfpage
Ptot
(W)
IC
(A)
60
(1)
(2)
(2)
1
40
(1)
20
10 1
1
10
V CE (V)
0
10 2
0
(1) Tmb = 25 °C.
(2) Th = 70 °C.
40
60
80
100
120
140
Th ( oC)
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
1997 Nov 17
20
Fig.3 Power derating curves.
3
Philips Semiconductors
Product specification
UHF power transistor
BLV920
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown
voltage
open emitter; IC = 15 mA
70
−
−
V
V(BR)CEO
collector-emitter breakdown
voltage
open base; IC = 30 mA
30
−
−
V
V(BR)EBO
emitter-base breakdown
voltage
open collector; IE = 0.6 mA
3
−
−
V
ICES
collector leakage current
VBE = 0; VCE = 28 V
−
−
1.5
mA
hFE
DC current gain
VCE = 10 V; IC = 1 A; note 1
30
−
120
Cc
collector capacitance
VCB = 26 V; IE = ie = 0; f = 1 MHz
−
17
−
pF
Cre
feedback capacitance
VCE = 26 V; IC = 0; f = 1 MHz
−
11
−
pF
Note
1. Measured under pulsed conditions: tp ≤ 500 µs; δ ≤ 0.01.
MLC671
MLC672
60
100
handbook, halfpage
handbook, halfpage
h FE
(1)
Cc
(pF)
80
40
60
(2)
40
20
20
0
0
1
2
3
4
5
0
6
0
10
I C (A)
Measured under pulsed conditions; tp ≤ 500 µs; δ ≤ 0.01.
(1) VCE = 26 V.
(2) VCE = 10 V.
Fig.4
30
40
50
VCB (V)
IE = ie = 0; f = 1 MHz.
DC current gain as a function of collector
current; typical values.
1997 Nov 17
20
Fig.5
4
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLV920
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter, class-AB test circuit; Rth mb-h = 0.4 K/W.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
CW, class-AB
960
26
50
20
≥10
≥55
Ruggedness in class-AB operation
The BLV920 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated
output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 50 mA; Th = 25 °C; Rth mb-h = 0.4 K/W.
MLC673
16
MLC674
80
handbook, halfpage
30
handbook, halfpage
η
(%)
Gp
(dB)
Gp
12
PL
(W)
60
20
η
40
8
10
20
4
0
0
0
10
20
0
30
0
P L (W)
VCE = 26 V.
ICQ = 50 mA.
VCE = 26 V.
ICQ = 50 mA.
f = 960 MHz.
f = 960 MHz.
Fig.6
Power gain and efficiency as functions of
load power; typical values.
1997 Nov 17
Fig.7
5
1
2
3
P i (W)
4
Load power as a function of input power;
typical values.
Philips Semiconductors
Product specification
UHF power transistor
handbook, full pagewidth
R1
VB
C6
C18
C14
C20
C15
C17
L13
C8
input
50 Ω
BLV920
C1
R2
VCC
L14
C7
L12
C16
L11
,,,,,,,,,,,
,,,,,,,,,,,
L1
L2
C2
L3
C3
C5
DUT
L4
C10
L5 L6 L7 L8
C4
C9
L9
L10
C11
C13
C19
output
50 Ω
C12
MGC325
Fig.8 Class-AB test circuit at f = 960 MHz.
List of components (see Figs 8 and 9)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C13
multilayer ceramic chip
capacitor; note 1
43 pF
C2, C3, C11, C12
film dielectric trimmer
1.4 pF to 5.5 pF
C4, C5
multilayer ceramic chip
capacitor; note 2
10 pF
C6, C17
multilayer ceramic chip
capacitor; note 1
150 pF
C7, C16
ceramic capacitor
22 nF
2222 640 08223
C8, C19
solid aluminium capacitor
10 µF, 63 V
2222 030 38109
C14
multilayer ceramic chip
capacitor; note 1
20 pF
C9, C10
multilayer ceramic chip
capacitor; note 2
11 pF
C20
multilayer ceramic chip
capacitor; note 1
1 nF
C15, C18
multilayer ceramic chip
capacitor; note 1
62 pF
L1
stripline; note 3
50 Ω
length 16.8 mm
width 2.4 mm
L2
stripline; note 3
50 Ω
length 14.8 mm
width 2.4 mm
L3
stripline; note 3
50 Ω
length 13.7 mm
width 2.4 mm
1997 Nov 17
6
2222 809 09001
Philips Semiconductors
Product specification
UHF power transistor
COMPONENT
BLV920
DESCRIPTION
VALUE
DIMENSIONS
L4
stripline; note 3
43 Ω
length 3.5 mm
width 3 mm
L5
stripline; note 3
43 Ω
length 6.4 mm
width 3 mm
L6
stripline; note 3
43 Ω
length 5.8 mm
width 3 mm
L7
stripline; note 3
43 Ω
length 2.4 mm
width 3 mm
L8
stripline; note 3
50 Ω
length 3 mm
width 2.4 mm
L9
stripline; note 3
50 Ω
length 15.5 mm
width 2.4 mm
L10
stripline; note 3
50 Ω
length 20 mm
width 2.4 mm
L11
4 turns enamelled 0.8 mm
copper wire
45 nH
int. diameter 4mm
length 5 mm
leads 2 × 5 mm
L12
3 turns enamelled 0.8 mm
copper wire
30 nH
int. diameter 3mm
length 5 mm
leads 2 × 5 mm
L13, L14
grade 3B Ferroxcube
wideband RF choke
R1, R2
metal film resistor
4312 020 36642
10 Ω, 0.4 W
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32".
1997 Nov 17
CATALOGUE No.
7
2322 151 71009
Philips Semiconductors
Product specification
UHF power transistor
BLV920
122
handbook, full pagewidth
copper straps
copper straps
rivets
rivets
70
rivets
rivets
copper straps
copper straps
C19
C8
C20
L13
L14
C17
C16
C6
C7
R2
R1
C18
C14
C15
L12
L11
C10
C5
L1
L2
L3
C4
C1
L4
L5
L6
L7 L8
L9
L10
C13
C9
C2
C11
C3
C12
MGC326
Dimensions in mm.
The components are located on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections
are made by fixing screws, hollow rivets and copper straps around the board and under the emitters to provide a direct contact between the component
side and the ground plane.
Fig.9 Component layout for 960 MHz class-AB test circuit.
1997 Nov 17
8
Philips Semiconductors
Product specification
UHF power transistor
BLV920
MLC676
MLC675
5
10
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
RL
4
8
xi
6
3
4
2
XL
ri
1
2
0
820
860
900
940
0
820
980
860
900
940
980
f (MHz)
f (MHz)
VCE = 26 V; ICQ = 50 mA; PL = 20 W;
Th = 25 °C; Rth mb-h = 0.4 K/W.
VCE = 26 V; ICQ = 50 mA; PL = 20 W;
Th = 25 °C; Rth mb-h = 0.4 K/W.
Fig.10 Input impedance as a function of frequency
(series components); typical values.
Fig.11 Load impedance as a function of frequency
(series components); typical values.
MLC677
12
handbook, halfpage
Gp
(dB)
8
handbook, halfpage
4
Zi
ZL
0
820
860
900
940
MBA451
980
f (MHz)
VCE = 26 V; ICQ = 50 mA; PL = 20 W;
Th = 25 °C; Rth mb-h = 0.4 K/W.
Fig.12 Power gain as a function of frequency;
typical values.
1997 Nov 17
Fig.13 Definition of transistor impedance.
9
Philips Semiconductors
Product specification
UHF power transistor
BLV920
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT171A
D
A
F
D1
U1
B
q
C
w2 M C
H1
c
b1
2
H
4
6
E1
U2
1
A
3
5
E
w1 M A B
p
Q
w3 M
b
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
c
D
D1
E
E1
e
mm
6.81
6.07
2.15
1.85
3.20
2.89
0.16
0.07
9.25
9.04
9.30
8.99
5.95
5.74
6.00
5.70
3.58
inches
w1
w2
w3
0.51
1.02
0.26
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236
0.120 0.445 0.365 0.135 0.170
0.980 0.236
0.725
0.02
0.140
0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224
0.100 0.415 0.355 0.125 0.162
0.970 0.224
0.04
0.01
OUTLINE
VERSION
F
JEDEC
EIAJ
SOT171A
1997 Nov 17
H1
3.05 11.31 9.27
2.54 10.54 9.01
REFERENCES
IEC
H
p
3.43
3.17
Q
q
U1
U2
4.32
24.90 6.00
18.42
4.11
24.63 5.70
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
10
Philips Semiconductors
Product specification
UHF power transistor
BLV920
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Nov 17
11
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© Philips Electronics N.V. 1997
SCA56
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127067/00/02/pp12
Date of release: 1997 Nov 17
Document order number:
9397 750 03093
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