, Lf na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Mosfet Transistor IRF840 0(2) FEATURES Drain Current -ID=8.0A@ TC=25°C Drain Source Voltage: VDSs= 500V(Min) Static Drain-Source On-Resistance ) = 0.85fi(Max) S(3) i 1 '. 1. i 1. LGate 2. Drain PIN 1 2: DESCRITION 3. Source TO-220C package Designed for high voltage, high speed switching power applications such as switching regulators, converters, solenoid and relay drivers. - r B M -» V -*| |x~ 1 j-ert ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous + 20 V Drain Current-Continuous 8 A I DM Drain Current-Single Plused 32 A PD Total Dissipation @Tc=25°C 125 W i M* Tj Tstg Max. Operating Junction Temperature Storage Temperature 150 r -55-150 r THERMAL CHARACTERISTICS SYMBOL PARAMETER Rfh j-c Thermal Resistance.Junction to Case Rth j-a Thermal Resistance.Junction to Ambient MAX UNIT 1.0 'CM/ 62.5 "C/W r MLPCS * ' K ID —«<x>- A soi-. t ! •*!*• Q rr ' :"-H c 4 G »!•*• j R(-*- •« l ! 1 mm DIN A B C D F G H J K L Q R S U V MtN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors N-Channel Mosfet Transistor IRF840 ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified SYMBOL PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(IW Gate Threshold Voltage VDS= VGS; b= 0.25mA RDS(OH) Drain-Source On-Resistance IGSS V(BR)DSS MIN MAX 500 2 UNIT V 4 V VGS=10V; ID=4A 0.85 D Gate-Body Leakage Current VGS= ±20V;VDS=0 ±500 nA loss Zero Gate Voltage Drain Current VDS= 500V; VGS=0 250 nA VSD Forward On-Voltage ls= 8A; VGS=0 2.0 V