SPANSION AM29SL400CB100RWAI 4 megabit (512 k x 8-bit/256 k x 16-bit) cmos 1.8 volt-only super low voltage flash memory Datasheet

Am29SL400C
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number Am29SL400C Revision A
Amendment +5 Issue Date March 3, 2005
This Page Left Intentionally Blank.
ADVANCE INFORMATION
Am29SL400C
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only
Super Low Voltage Flash Memory
Distinctive Characteristics
■ Single power supply operation
— 1.65 to 2.2 V for read, program, and erase
operations
— Ideal for battery-powered applications
■ Manufactured on 0.32 µm process
technology
■ High performance
— Access times as fast as 100 ns
■ Ultra low power consumption (typical
values at 5 MHz)
—
—
—
—
1 µA Automatic Sleep Mode current
1 µA standby mode current
5 mA read current
20 mA program/erase current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations
within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 erase cycle
guarantee per sector
■ 20-year data retention at 125°C
■ Package option
— 48-ball FBGA
— 48-pin TSOP
■ Compatibility with JEDEC standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data
from, or program data to, a sector that is not
being erased, then resumes the erase
operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to
reading array data
■ Top or bottom boot block configurations
available
This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product
without notice.
Publication# Am29SL400C Rev: A
Amendment+5
Refer to AMD’s Website (www.amd.com) for the latest information.
A d v a n c e
I n f o r m a t i o n
General Description
The Am29SL400C is an 4Mbit, 1.8 V volt-only Flash
memory organized as 524,288 bytes or 262,144
words. The device is offered in 48-pin TSOP and
48-ball FBGA packages. The word-wide data (x16)
appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be
programmed and erased in-system with a single 1.8
volt VCC supply. No VPP is required for write or erase
operations. The device can also be programmed in
standard EPROM programmers.
The standard device offers access times of 100, 110,
120, and 150 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus
contention the device has separate chip enable
(CE#), write enable (WE#) and output enable (OE#)
controls.
The device requires only a single 1.8 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for
the program and erase operations.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the command register
using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming
circuitry. Write cycles also internally latch addresses
and data needed for the programming and erase operations. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that
automatically times the program pulse widths and
verifies proper cell margin. The Unlock Bypass
mode facilitates faster programming times by requiring only two write cycles to program data instead of
four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed) before executing the erase operation.
During erase, the device automatically times the
erase pulse widths and verifies proper cell margin.
2
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read
array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is
fully erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and
erase operations in any combination of the sectors of
memory. This can be achieved in-system or via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data
from, or program data to, any sector that is not selected for erasure. True background erase can thus
be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be
tied to the system reset circuitry. A system reset
would thus also reset the device, enabling the system microprocessor to read the boot-up firmware
from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly reduced in both these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
March 3, 2005
A d v a n c e
I n f o r m a t i o n
Table of Contents
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Special Handling Instructions for FBGA Packages ............6
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Am29SL400C Device Bus Operations ......................... 9
Word/Byte Configuration ........................................................9
Requirements for Reading Array Data .................................9
Writing Commands/Command Sequences ....................... 10
Program and Erase Operation Status ................................. 10
Standby Mode ............................................................................ 10
Automatic Sleep Mode ............................................................ 10
RESET#: Hardware Reset Pin ............................................... 10
Output Disable Mode ................................................................11
Table 2. Am29SL400CT Top Boot Block Sector
Address Table ...................................................................................... 11
Table 3. Am29SL400CB Bottom Boot Block
Sector Address Table ........................................................................ 11
Autoselect Mode .........................................................................11
Table 4. Am29SL400C Autoselect Codes (High
Voltage Method) ................................................................................. 12
Sector Protection/Unprotection ...........................................12
Temporary Sector Unprotect ................................................12
Figure 1. In-System Sector Protect/Unprotect Algorithms.... 13
Figure 2. Temporary Sector Unprotect Operation................. 14
Hardware Data Protection .................................................... 14
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 14
Reading Array Data .................................................................. 14
Reset Command ........................................................................ 14
Autoselect Command Sequence ...........................................15
Word/Byte Program Command Sequence ........................15
Figure 3. Program Operation.......................................................... 16
Chip Erase Command Sequence ...........................................16
Sector Erase Command Sequence .......................................16
Figure 4. Erase Operation ............................................................... 17
Command Definitions ............................................................. 18
Table 5. Am29SL400C Command Definitions .......................... 18
Write Operation Status .......................................................... 18
DQ7: Data# Polling .................................................................. 19
Figure 5. Data# Polling Algorithm................................................. 19
RY/BY#: Ready/Busy# ............................................................. 19
DQ6: Toggle Bit I ..................................................................... 20
DQ2: Toggle Bit II .................................................................... 20
Reading Toggle Bits DQ6/DQ2 ........................................... 20
Figure 6. Toggle Bit Algorithm ....................................................... 21
DQ5: Exceeded Timing Limits ...............................................21
March 3, 2005
DQ3: Sector Erase Timer ....................................................... 21
Table 6. Write Operation Status ................................................. 22
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 22
Figure 7. Maximum Negative Overshoot Waveform............. 22
Figure 8. Maximum Positive Overshoot Waveform .............. 22
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 23
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 9. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) ............................................................ 25
Figure 10. Typical ICC1 vs. Frequency........................................... 25
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 11. Test Setup ......................................................................... 26
Table 7. Test Specifications ............................................................ 26
Key to Switching Waveforms ............................................... 26
Figure 12. Input Waveforms and Measurement Levels .......... 26
Read Operations .......................................................................27
Figure 13. Read Operations Timings ............................................ 27
Hardware Reset (RESET#) ................................................... 28
Figure 14. RESET# Timings ............................................................. 28
Figure 15. BYTE# Timings for Read Operations ...................... 29
Figure 16. BYTE# Timings for Write Operations.................... 29
Erase/Program Operations ................................................... 30
Figure 17. Program Operation Timings........................................ 31
Figure 18. Chip/Sector Erase Operation Timings .................... 32
AC Characteristics
. . . . . . . . . . . . . . . . . . . . . . . 33
Figure 19. Data# Polling Timings (During Embedded
Algorithms) ......................................................................................... 33
Figure 20. Toggle Bit Timings (During Embedded
Algorithms) ......................................................................................... 33
Figure 21. DQ2 vs. DQ6 .................................................................. 34
Temporary Sector Unprotect ...............................................34
Figure 22. Temporary Sector Unprotect Timing
Diagram................................................................................................ 34
Figure 23. Sector Protect/Unprotect Timing Diagram .......... 35
Alternate CE# Controlled Erase/Program
Operations ..................................................................................36
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 24. Alternate CE# Controlled Write Operation
Timings ................................................................................................. 37
Erase and Programming Performance . . . . . . . . 38
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 38
TSOP Pin and BGA Package Capacitance . . . . . 38
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . 39
TS048—48-Pin Standard TSOP ............................................39
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . .40
FBA048—48-Ball Fine-Pitch Ball Grid Array
(FBGA) 6 x 8 mm Package .................................................... 40
Revision Summary. . . . . . . . . . . . . . . . . . . . . . . . . 41
3
A d v a n c e
I n f o r m a t i o n
Product Selector Guide
Family Part Number
Speed Options
Am29SL400C
Regulated Voltage Range VCC = 1.7–2.2 V
-100R
Standard Voltage Range VCC = 1.65–2.2 V
-110
-120
-150
Max access time, ns (tACC)
100
110
120
150
Max CE# access time, ns (tCE)
100
110
120
150
Max OE# access time, ns (tOE)
35
45
50
65
Note: See “AC Characteristics” for full specifications.
Block Diagram
DQ0–DQ15 (A-1)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
RESET#
WE#
BYTE#
Input/Output
Buffers
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
A0–A17
4
Timer
Address Latch
STB
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
March 3, 2005
A d v a n c e
I n f o r m a t i o n
Connection Diagrams
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
NC
A17
A7
A6
A5
A4
A3
A2
A1
March 3, 2005
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard TSOP
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
5
A d v a n c e
I n f o r m a t i o n
Connection Diagram
48-Ball FBGA
(Top View, Balls Facing Down)
A6
B6
C6
D6
E6
A13
A12
A14
A15
A16
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
WE#
RESET#
NC
NC
DQ5
DQ12
VCC
DQ4
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
NC
NC
NC
DQ2
DQ10
DQ11
DQ3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE#
OE#
VSS
Special Handling Instructions for FBGA
Packages
Special handling is required for Flash Memory products in molded packages (TSOP, BGA, PLCC, PDIP,
6
F6
G6
BYTE# DQ15/A-1
H6
VSS
SSOP). The package and/or data integrity may be
compromised if the package body is exposed to temperatures about 150°C for prolonged periods of time.
March 3, 2005
A d v a n c e
I n f o r m a t i o n
Pin Configuration
NC
A0–A17
Logic Symbol
=
18 addresses
DQ0–DQ14= 15 data inputs/outputs
DQ15/A-1 =
=
Pin not connected internally
18
DQ15 (data input/output, word
mode),
A-1 (LSB address input, byte
mode)
A0–A17
DQ0–DQ15
(A-1)
BYTE#
=
Selects 8-bit or 16-bit mode
CE#
CE#
=
Chip enable
OE#
OE#
=
Output enable
WE#
WE#
=
Write enable
RESET#
RESET#
=
Hardware reset pin, active low
BYTE#
RY/BY#
=
Ready/Busy# output
VCC
=
1.65–2.2 V single power supply
VSS
=
Device ground
March 3, 2005
16 or 8
RY/BY#
7
A d v a n c e
I n f o r m a t i o n
Ordering Information
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the elements below.
Am29SL400C
T
100R
E
C
TEMPERATURE RANGE
C
= Commercial (0°C to +70°C)
D
= Commercial (0°C to +70°C) with Pb-free Package
F
=
Industrial (-40°C to +85°C) with Pb-free Package
I
=
Industrial (–40°C to +85°C)
PACKAGE TYPE
WA = 48-Ball Fine-Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6 x 8 mm package (FBA048)
E
= 48-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
=
Top Sector
B
=
Bottom Sector
DEVICE NUMBER/DESCRIPTION
Am29SL400C
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory
1.8 Volt-only Read, Program, and Erase
Valid Combinations for TSOP Packages
Order Number
Order Number
AM29SL400CT100R,
AM29SL400CB100R
AM29SL400CT110,
AM29SL400CB110
AM29SL400CT120,
AM29SL400CB120
AM29SL400CT150,
AM29SL400CB150
Valid Combinations for FBGA Packages
Package Marking
AM29SL400CT100R,
AM29SL400CB100R
EC, EI,
ED, EF
A400CT10R,
A400CB10R
AM29SL400CT110,
AM29SL400CB110
WAC
AM29SL400CT120,
AM29SL400CB120
WAD,
AM29SL400CT150,
AM29SL400CB150
WAI
WAF
A400CT11V,
A400CB11V
A400CT12V,
A400CB12V
C, I,
D, F
A400CT15V,
A400CB15V
Valid Combinations
Valid Combinations list configurations planned to be
supported in volume for this device. Consult the
local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations.
8
March 3, 2005
A d v a n c e
I n f o r m a t i o n
Device Bus Operations
This section describes the requirements and use of
the device bus operations, which are initiated
through the internal command register. The command register itself does not occupy any addressable
memory location. The register is composed of
latches that store the commands, along with the ad-
Table 1.
dress and data information needed to execute the
command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device.
Table 1 lists the device bus operations, the inputs
and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Am29SL400C Device Bus Operations
DQ8–DQ15
CE#
OE#
WE
#
RESET#
Addresses
(Note 1)
DQ0–
DQ7
BYTE#
= VIH
BYTE#
= VIL
Read
L
L
H
H
AIN
DOUT
DOUT
Write
L
H
L
H
AIN
DIN
DIN
DQ8–DQ14 = High-Z,
DQ15 = A-1
VCC ±
0.2 V
X
X
VCC ±
0.2 V
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
High-Z
High-Z
High-Z
Sector Protect (Note 2)
L
H
L
VID
Sector Address,
A6 = L, A1 = H,
A0 = L
DIN
X
X
Sector Unprotect (Note 2)
L
H
L
VID
Sector Address,
A6 = H, A1 = H,
A0 = L
DIN
X
X
Temporary Sector Unprotect
X
X
X
VID
AIN
DIN
DIN
High-Z
Operation
Standby
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 10 ± 1.0 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A17:A0 in word mode (BYTE# = VIH), A17:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins DQ15–DQ0 operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device
is in word configuration, DQ15–DQ0 are active and
controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in
byte configuration, and only data I/O pins DQ0–DQ7
are active and controlled by CE# and OE#. The data
I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin
is used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system
must drive the CE# and OE# pins to VIL. CE# is the
power control and selects the device. OE# is the output control and gates array data to the output pins.
March 3, 2005
WE# should remain at VIH . The BYTE# pin determines whether the device outputs array data in
words or bytes.
The internal state machine is set for reading array
data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the
memory content occurs during the power transition.
No command is necessary in this mode to obtain
array data. Standard microprocessor read cycles that
assert valid addresses on the device address inputs
produce valid data on the device data outputs. The
device remains enabled for read access until the
command register contents are altered.
See Reading Array Data‚ on page 14 for more information. Refer to the AC Read Operations table for
timing specifications and to Figure 14‚ on page 28 for
the timing diagram. ICC1 in the DC Characteristics
table represents the active current specification for
reading array data.
9
A d v a n c e
I n f o r m a t i o n
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to Word/Byte Configuration‚ on page 9
for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters
the Unlock Bypass mode, only two write cycles are
required to program a word or byte, instead of four.
The Word/Byte Program Command Sequence‚ on
page 15 has details on programming data to the device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple
sectors, or the entire device. Table 2 on page 11 and
Table 3 on page 11 indicate the address space that
each sector occupies. A sector address consists of
the address bits required to uniquely select a sector.
Command Definitions‚ on page 18 has details on
erasing a sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory
array) on DQ7–DQ0. Standard read cycle timings
apply in this mode. Refer to Autoselect Mode‚ on
page 11 and Autoselect Command Sequence‚ on
page 15 for more information.
ICC2 in the DC Characteristics table represents the
active current specification for the write mode. The
AC Characteristics‚ on page 28 contains timing
specification tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system
may check the status of the operation by reading the
status bits on DQ7–DQ0. Standard read cycle timings and ICC read specifications apply. Refer to Write
Operation Status‚ on page 18 for more information,
and to AC Characteristics‚ on page 28 for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.2 V.
(Note that this is a more restricted voltage range
than VIH.) If CE# and RESET# are held at VIH, but
not within V CC ± 0.2 V, the device will be in the
10
standby mode, but the standby current will be
greater. The device requires standard access time
(tCE) for read access when the device is in either of
these standby modes, before it is ready to read data.
The device also enters the standby mode when the
RESET# pin is driven low. Refer to the next section,
RESET#: Hardware Reset Pin.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3 in DC Characteristics‚ on page 24 represents
the standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically enables this mode when addresses remain stable for
tACC + 50 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals.
Standard address access timings provide new data
when addresses are changed. While in sleep mode,
output data is latched and always available to the
system. ICC4 in the DC Characteristics table represents the automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP,
the device immediately terminates any operation
in progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET# pulse. The device also resets the internal state
machine to reading array data. The operation that
was interrupted should be reinitiated once the device
is ready to accept another command sequence, to
ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.2 V, the device
draws CMOS standby current (I CC4 ). If RESET# is
held at V IL but not within VSS ±0.2 V, the standby
current is greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the
Flash memory, enabling the system to read the
boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a 0 (busy) until the
internal reset operation is complete, which requires a
time of t READY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine
whether the reset operation is complete. If RESET#
is asserted when a program or erase operation is not
executing (RY/BY# pin is 1), the reset operation is
completed within a time of t READY (not during Embedded Algorithms). The system can read data tRH
after the RESET# pin returns to VIH.
March 3, 2005
A d v a n c e
I n f o r m a t i o n
Refer to the AC Characteristics tables for RESET#
parameters and to Figure 15‚ on page 29 for the timing diagram.
Table 2.
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the
high impedance state.
Am29SL400CT Top Boot Block Sector Address Table
Address Range (in hexadecimal)
Sector
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
SA0
0
0
0
X
X
X
64/32
00000h–0FFFFh
00000h–07FFFh
SA1
0
0
1
X
X
X
64/32
10000h–1FFFFh
08000h–0FFFFh
SA2
0
1
0
X
X
X
64/32
20000h–2FFFFh
10000h–17FFFh
SA3
0
1
1
X
X
X
64/32
30000h–3FFFFh
18000h–1FFFFh
SA4
1
0
0
X
X
X
64/32
40000h–4FFFFh
20000h–27FFFh
SA5
1
0
1
X
X
X
64/32
50000h–5FFFFh
28000h–2FFFFh
SA6
1
1
0
X
X
X
64/32
60000h–6FFFFh
30000h–37FFFh
SA7
1
1
1
0
X
X
32/16
70000h–77FFFh
38000h–3BFFFh
SA8
1
1
1
1
0
0
8/4
78000h–79FFFh
3C000h–3CFFFh
SA9
1
1
1
1
0
1
8/4
7A000h–7BFFFh
3D000h–3DFFFh
SA10
1
1
1
1
1
X
16/8
7C000h–7FFFFh
3E000h–3FFFFh
Table 3.
(x8)
Address Range
(x16)
Address Range
Am29SL400CB Bottom Boot Block Sector Address Table
Address Range (in hexadecimal)
Sector
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
SA0
0
0
0
0
0
X
16/8
00000h–03FFFh
00000h–01FFFh
SA1
0
0
0
0
1
0
8/4
04000h–05FFFh
02000h–02FFFh
SA2
0
0
0
0
1
1
8/4
06000h–07FFFh
03000h–03FFFh
SA3
0
0
0
1
X
X
32/16
08000h–0FFFFh
04000h–07FFFh
SA4
0
0
1
X
X
X
64/32
10000h–1FFFFh
08000h–0FFFFh
SA5
0
1
0
X
X
X
64/32
20000h–2FFFFh
10000h–17FFFh
SA6
0
1
1
X
X
X
64/32
30000h–3FFFFh
18000h–1FFFFh
SA7
1
0
0
X
X
X
64/32
40000h–4FFFFh
20000h–27FFFh
SA8
1
0
1
X
X
X
64/32
50000h–5FFFFh
28000h–2FFFFh
SA9
1
1
0
X
X
X
64/32
60000h–6FFFFh
30000h–37FFFh
SA10
1
1
1
X
X
X
64/32
70000h–7FFFFh
38000h–3FFFFh
(x8)
Address Range
(x16)
Address Range
Note for Tables 2 and 3: Address range is A17:A-1 in byte mode and A17:A0 in word mode. See “Word/Byte Configuration”
section for more information.
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming
March 3, 2005
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
When using programming equipment, the autoselect
mode requires VID on address pin A9. Address pins
A6, A1, and A0 must be as shown in Table 4 on
page 12. In addition, when verifying sector protection, the sector address must appear on the appro-
11
A d v a n c e
I n f o r m a t i o n
priate highest order address bits (see Table 2 on
page 11 and Table 3 on page 11). Table 4 shows the
remaining address bits that are don’t care. When all
necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0.
Table 4.
Description
Am29SL400C Autoselect Codes (High Voltage Method)
A17 A11
to
to
WE# A12 A10
CE#
OE#
Manufacturer ID: AMD
L
L
H
Device ID:
Am29SL400C
(Top Boot Block)
Word
L
L
H
Byte
L
L
H
Device ID:
Am29SL400C
(Bottom Boot
Block)
Word
L
L
H
Byte
L
L
H
Sector Protection
Verification
Mode
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 5 on page 18.
This method does not require VID. See Command
Definitions‚ on page 18 for details on using the autoselect mode.
L
L
H
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8
to
DQ15
DQ7
to
DQ0
X
01h
22h
70h
X
70h
22h
F1h
X
F1h
X
01h
(protected)
X
00h
(unprotected
)
X
X
VID
X
L
X
L
L
X
X
VID
X
L
X
L
H
X
SA
X
X
VID
VID
X
X
L
L
X
X
L
H
H
L
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The
hardware sector unprotection feature re-enables
both program and erase operations in previously
protected sectors. Sector protection/unprotection
can be implemented via two methods.
Sector protection/unprotection requires VID on the
RESET# pin only, and can be implemented either
in-system or via programming equipment. Figure 2‚
on page 14 shows the algorithms and Figure 24‚ on
page 37 shows the timing diagram. This method
uses standard microprocessor bus cycle timing. For
sector unprotect, all unprotected sectors must first
be protected prior to the first sector unprotect write
cycle.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protect-
12
ing sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode‚ on
page 11 for details.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting
the RESET# pin to VID. During this mode, formerly
protected sectors can be programmed or erased by
selecting the sector addresses. Once VID is removed
from the RESET# pin, all the previously protected
sectors are protected again. Figure 3‚ on page 16
shows the algorithm, and Figure 22 shows the timing
diagrams, for this feature.
March 3, 2005
A d v a n c e
I n f o r m a t i o n
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Protect another
sector?
No
PLSCNT
= 1000?
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Protect
Algorithm
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Sector Protect
complete
Set up
next sector
address
No
Data = 00h?
Yes
Last sector
verified?
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 1. In-System Sector Protect/Unprotect Algorithms
March 3, 2005
13
A d v a n c e
I n f o r m a t i o n
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
tection against inadvertent writes (refer to Table 5
on page 18 for command definitions). In addition,
the following hardware data protection measures
prevent accidental erasure or programming, which
might otherwise be caused by spurious system level
signals during VCC power-up and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored until V CC is greater than V LKO. The system
must provide the proper signals to the control pins to
prevent unintentional writes when V CC is greater
than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
Figure 2. Temporary Sector Unprotect
Operation
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data pro-
Command Definitions
Writing specific address and data commands or sequences into the command register initiates device
operations. Table 5 on page 18 defines the valid register command sequences. Writing incorrect address and data values or writing them in the
improper sequence resets the device to reading
array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched
on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams
in the AC Characteristics section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode.
The system can read array data using the standard
read timings, except that if it reads at an address
14
Logical Inhibit
Write cycles are inhibited by holding any one of OE#
= VIL, CE# = VIH or WE# = VIH. To initiate a write
cycle, CE# and WE# must be a logical zero while
OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power
up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up.
within erase-suspended sectors, the device outputs
status data. After completing a programming operation in the Erase Suspend mode, the system may
once again read array data with the same exception.
See “Erase Suspend/Erase Resume Commands” for
more information on this mode.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the Reset
Command‚ on page 14 section, next.
See also Requirements for Reading Array Data‚ on
page 9 for more information. The Read Operations
table provides the read parameters, and Figure 14‚
on page 28 shows the timing diagram.
Reset Command
Writing the reset command to the device resets the
device to reading array data. Address bits are don’t
care for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading
array data. Once erasure begins, however, the de-
March 3, 2005
A d v a n c e
I n f o r m a t i o n
vice ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until
the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to reading array data (also
applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command returns the device
to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices
codes, and determine whether or not a sector is protected. Table 5 on page 18 shows the address and
data requirements. This method is an alternative to
that shown in Table 4 on page 12, which is intended
for PROM programmers and requires VID on address
bit A9.
The autoselect command sequence is initiated by
writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command sequence. A read cycle at address XX00h retrieves the manufacturer code. A read cycle at
address 01h in word mode (or 02h in byte mode) returns the device code. A read cycle containing a sector address (SA) and the address 02h in word mode
(or 04h in byte mode) returns 01h if that sector is
protected, or 00h if it is unprotected. Refer to Table 2
on page 11 and Table 3 on page 11 for valid sector
addresses.
The system must write the reset command to exit
the autoselect mode and return to reading array
data.
Word/Byte Program Command Sequence
The system may program the device by word or
byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to
provide further controls or timings. The device auto-
March 3, 2005
matically generates the program pulses and verifies
the programmed cell margin. Table 5 on page 18
shows the address and data requirements for the
byte program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. See Write Operation Status‚
on page 18 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming operation. The Byte Program command
sequence should be reinitiated once the device has
reset to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a 0 back to a 1. Attempting to do so may halt
the operation and set DQ5 to 1, or cause the Data#
Polling algorithm to indicate the operation was successful. However, a succeeding read will show that
the data is still 0. Only erase operations can convert
a 0 to a 1.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to the device faster than using
the standard program command sequence. The unlock bypass command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle containing the unlock bypass command,
20h. The device then enters the unlock bypass
mode. A two-cycle unlock bypass program command
sequence is all that is required to program in this
mode. The first cycle in this sequence contains the
unlock bypass program command, A0h; the second
cycle contains the program address and data. Additional data is programmed in the same manner. This
mode dispenses with the initial two unlock cycles required in the standard program command sequence,
resulting in faster total programming time. Table 5
on page 18 shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset
command sequence. The first cycle must contain the
data 90h; the second cycle the data 00h. Addresses
are don’t cares. The device then returns to reading
array data.
Figure 3‚ on page 16 illustrates the algorithm for the
program operation. See Erase/Program Operations‚
on page 30 for parameters, and Figure 17‚ on
page 31 for timing diagrams.
15
A d v a n c e
I n f o r m a t i o n
of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. See Write Operation Status‚ on page 18 for
information on these status bits. When the Embedded Erase algorithm is complete, the device returns
to reading array data and addresses are no longer
latched.
START
Figure 4‚ on page 17 illustrates the algorithm for the
erase operation. See Erase/Program Operations‚ on
page 30 for parameters, and to Figure 18 for timing
diagrams.
Write Program
Command Sequence
Sector Erase Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 5 for program command sequence.
Figure 3. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by
the chip erase command, which in turn invokes the
Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero
data pattern prior to electrical erase. The system is
not required to provide any controls or timings during these operations. Table 5 on page 18 shows the
address and data requirements for the chip erase
command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a
hardware reset during the chip erase operation immediately terminates the operation. The Chip Erase
command sequence should be reinitiated once the
device has returned to reading array data, to ensure
data integrity The system can determine the status
16
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by
the address of the sector to be erased, and the sector erase command. Table 5 on page 18 shows the
address and data requirements for the sector erase
command sequence.
The device does not require the system to preprogram the memory prior to erase. The Embedded
Erase algorithm automatically programs and verifies
the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations.
After the command sequence is written, a sector
erase time-out of 50 µs begins. During the time-out
period, additional sector addresses and sector erase
commands may be written. Loading the sector erase
buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors.
The time between these additional cycles must be
less than 50 µs, otherwise the last address and command might not be accepted, and erasure may begin. It is recommended that processor interrupts be
disabled during this time to ensure all commands are
accepted. The interrupts can be re-enabled after the
last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50 µs, the system need not
monitor DQ3. Any command other than Sector
Erase or Erase Suspend during the time-out period resets the device to reading array data.
The system must rewrite the command sequence
and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out. (See the “DQ3: Sector
Erase Timer” section.) The time-out begins from the
rising edge of the final WE# pulse in the command
sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. Note that a hardware reset
during the sector erase operation immediately terminates the operation. The Sector Erase command sequence should be reinitiated once the device has
returned to reading array data, to ensure data integrity.
March 3, 2005
A d v a n c e
I n f o r m a t i o n
When the Embedded Erase algorithm is complete,
the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7,
DQ6, DQ2, or RY/BY#. (Refer to Write Operation
Status‚ on page 18 for information on these status
bits.)
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations‚ on
page 30 for parameters, and to Figure 18‚ on
page 32 for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to
interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during
the Sector Erase time-out immediately terminates
the time-out period and suspends the erase operation. Addresses are don’t-cares when writing the
Erase Suspend command.
program operation. See Write Operation Status‚ on
page 18 for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts
to the Erase Suspend mode, and is ready for another
valid operation. See Autoselect Command Sequence‚ on page 15 for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written
after the device has resumed erasing.
START
Write Erase
Command Sequence
When the Erase Suspend command is written during
a sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends
the erase operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device
erase suspends all sectors selected for erasure.)
Normal read and write timings and command definit i o n s a p p l y. R e a d i n g a t a n y a d d r e s s w i t h i n
erase-suspended sectors produces status data on
DQ7–DQ0. The system can use DQ7, or DQ6 and
DQ2 together, to determine if a sector is actively
erasing or is erase-suspended. See Write Operation
Status‚ on page 18 for information on these status
bits.
After an erase-suspended program operation is complete, the system can once again read array data
within non-suspended sectors. The system can determine the status of the program operation using
the DQ7 or DQ6 status bits, just as in the standard
March 3, 2005
Data Poll
from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 5 on page 18 for erase command sequence.
2. See DQ3: Sector Erase Timer‚ on page 21 for more information.
Figure 4. Erase Operation
17
A d v a n c e
I n f o r m a t i o n
Command Definitions
Cycles
Table 5.
Command
Sequence
(Note 1)
Am29SL400C Command Definitions
Bus Cycles (Notes 2-5)
First
Second
Addr
Dat
a
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
Autoselect (Note 8)
Manufacturer ID
Word
Byte
Device ID,
Top Boot Block
Word
Device ID,
Bottom Boot Block
Word
Sector Protect Verify
(Note 9)
Program
Unlock Bypass
Byte
Byte
4
4
4
Word
555
AAA
555
AAA
555
AAA
AA
AA
AA
555
4
Addr
2AA
555
2AA
555
2AA
555
Third
Dat
a
555
55
AAA
555
55
AAA
555
55
AAA
2AA
AA
55
AAA
555
AAA
Word
555
2AA
555
Word
Byte
4
3
AAA
555
AAA
AA
AA
555
2AA
555
55
AAA
555
55
AAA
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 11)
2
XXX
90
XXX
00
Sector Erase
Word
Byte
Word
Byte
6
6
555
AAA
555
AAA
AA
AA
Erase Suspend (Note 12)
1
XXX
B0
Erase Resume (Note 13)
1
XXX
30
2AA
555
2AA
555
Data
90
X00
01
X01
70h
X02
70h
X01
FIh
90
90
90
Byte
Byte
Addr
555
Unlock Bypass Program (Note 10)
Chip Erase
Addr
Fourth
Dat
a
55
55
555
AAA
555
AAA
A0
X02
FIh
(SA)
X02
XX00
(SA)
X04
00
PA
PD
Fifth
Addr
Dat
a
Sixth
Addr
Dat
a
XX01
01
20
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A17–A12 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus
cycles are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.
5. Address bits A17–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.
6. No unlock or command cycles required when reading
array data, unless SA or PA required.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5
goes high (while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is
a read cycle.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command
18
Sequence” for more information.
10. The Unlock Bypass command is required prior to the
Unlock Bypass Program command.
11. The Unlock Bypass Reset command is required to return
to reading array data when the device is in the unlock
bypass mode.
12. The system may read and program in non-erasing
sectors, or enter the autoselect mode, when in the Erase
Suspend mode. The Erase Suspend command is valid
only during a sector erase operation.
13. The Erase Resume command is valid only during the Erase
Suspend mode.
Write Operation Status
The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 6 on page 22 and the following
March 3, 2005
A d v a n c e
I n f o r m a t i o n
subsections describe the functions of these bits.
DQ7, RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is
complete or in progress. These three bits are discussed first.
START
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress
or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of
the final WE# pulse in the program or erase command sequence.
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls
within a protected sector, Data# Polling on DQ7 is
active for approximately 1 µs, then the device returns to reading array data.
DQ7 = Data?
No
No
DQ5 = 1?
Yes
During the Embedded Erase algorithm, Data# Polling
produces a 0 on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a 1 on DQ7.
This is analogous to the complement/true datum
output described for the Embedded Program algorithm: the erase function changes all the bits in a
sector to 1; prior to this, the device outputs the
complement, or 0. The system must provide an address within any of the sectors selected for erasure
to read valid status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 100 µs,
then the device returns to reading array data. If not
all selected sectors are protected, the Embedded
Erase algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ7–DQ0 on the following read cycles. This is beca us e DQ 7 m ay c h a n ge a s ynch r onou sly with
DQ0–DQ6 while Output Enable (OE#) is asserted
low. Figure 19‚ on page 33 Data# Polling Timings
(During Embedded Algorithms), illustrates this.
Table 6 on page 22 shows the outputs for Data#
Polling on DQ7. Figure 5 shows the Data# Polling algorithm.
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7
may change simultaneously with DQ5.
Figure 5. Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
that indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid
after the rising edge of the final WE# pulse in the
command sequence. Since RY/BY# is an open-drain
output, several RY/BY# pins can be tied together in
parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively
erasing or programming. (This includes program-
March 3, 2005
19
A d v a n c e
I n f o r m a t i o n
ming in the Erase Suspend mode.) If the output is
high (Ready), the device is ready to read array data
(including during the Erase Suspend mode), or is in
the standby mode.
Table 6 on page 22 shows the outputs for RY/BY#.
Figure 14‚ on page 28, Figure 17‚ on page 31, and
Figure 18‚ on page 32 shows RY/BY# for reset, program, and erase operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle (The system may use either OE# or
CE# to control the read cycles). When the operation
is complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are
protected, the Embedded Erase algorithm erases the
unprotected sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in
progress), DQ6 toggles. When the device enters the
Erase Suspend mode, DQ6 stops toggling. However,
the system must also use DQ2 to determine which
sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection
on DQ7: Data# Polling‚ on page 19).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to
reading array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 6 on page 22 shows the outputs for Toggle Bit I
on DQ6. Figure 6‚ on page 21 shows the toggle bit
algorithm. Figure 20‚ on page 33 shows the toggle
bit timing diagrams. Figure 21 shows the differences
between DQ2 and DQ6 in graphical form. See also
the subsection on DQ2: Toggle Bit II‚ on page 20.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
20
(tha t is , the Embedded Erase algorithm is in
progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of
the final WE# pulse in the command sequence. The
device toggles DQ2 with each OE# or CE# read cycle.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. But DQ2 cannot distinguish whether the sector
is actively erasing or is erase-suspended. DQ6, by
comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus,
both status bits are required for sector and mode information. Refer to Table 6 on page 22 to compare
outputs for DQ2 and DQ6.
Figure 6‚ on page 21 shows the toggle bit algorithm
in flowchart form, and the section DQ2: Toggle Bit
II‚ on page 20 explains the algorithm. See also the
DQ6: Toggle Bit I subsection. Figure 20‚ on page 33
shows the toggle bit timing diagram. Figure 21‚ on
page 34 shows the differences between DQ2 and
DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6‚ on page 21 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least
twice in a row to determine whether a toggle bit is
toggling. Typically, the system would note and store
the value of the toggle bit after the first read. After
the second read, the system would compare the new
value of the toggle bit with the first. If the toggle bit
is not toggling, the device has completed the program or erase operation. The system can read array
data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling,
the system also should note whether the value of
DQ5 is high (see the section on DQ5). If it is, the
system should then determine again whether the
toggle bit is toggling, since the toggle bit may have
stopped toggling just as DQ5 went high. If the toggle
bit is no longer toggling, the device has successfully
completed the program or erase operation. If it is
still toggling, the device did not completed the operation successfully, and the system must write the
reset command to return to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5
has not gone high. The system may continue to
monitor the toggle bit and DQ5 through successive
read cycles, determining the status as described in
the previous paragraph. Alternatively, it may choose
to perform other system tasks. In this case, the system must start at the beginning of the algorithm
when it returns to determine the status of the operation (top of Figure 6‚ on page 21).
March 3, 2005
A d v a n c e
I n f o r m a t i o n
Under these conditions DQ5 produces a 1. This is a
failure condition that indicates the program or erase
cycle was not successfully completed.
START
Read DQ7–DQ0
(Note 1)
Under both these conditions, the system must issue
the reset command to return the device to reading
array data.
Read DQ7–DQ0
Toggle Bit
= Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
(Notes
1, 2)
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
The DQ5 failure condition may appear if the system
tries to program a 1 to a location that is previously
programmed to “0.” Only an erase operation can
change a 0 back to a 1. Under this condition, the
device halts the operation, and when the operation
has exceeded the timing limits, DQ5 produces a 1.
Program/Erase
Operation Complete
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
an erase operation has begun. (The sector erase
timer does not apply to the chip erase command.) If
additional sectors are selected for erasure, the entire
time-out also applies after each additional sector
erase command. When the time-out is complete,
DQ3 switches from 0 to 1. If the time between additional sector erase commands from the system can
be assumed to be less than 50 µs, the system need
not monitor DQ3. See also Sector Erase Command
Sequence‚ on page 16.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure the device
has accepted the command sequence, and then read
DQ3. If DQ3 is 1, the internally controlled erase cycle
has begun; all further commands (other than Erase
Suspend) are ignored until the erase operation is
complete. If DQ3 is 1, the device will accept additional sector erase commands. To ensure the command has been accepted, the system software
should check the status of DQ3 prior to and following
each subsequent sector erase command. If DQ3 is
high on the second status check, the last command
might not have been accepted. Table 6 on page 22
shows the outputs for DQ3.
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to 1. See text.
Figure 6. Toggle Bit Algorithm
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time
has exceeded a specified internal pulse count limit.
March 3, 2005
21
A d v a n c e
Table 6.
Erase
Suspend
Mode
Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/BY#
DQ7#
Toggle
0
N/A
No toggle
0
0
Toggle
0
1
Toggle
0
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
Operation
Standard
Mode
I n f o r m a t i o n
Embedded Program Algorithm
Embedded Erase Algorithm
Reading within Erase
Suspended Sector
Notes:
1. DQ5 switches to 1 when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See DQ5: Exceeded Timing Limits‚ on page 21 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
Absolute Maximum Ratings
Storage Temperature
Plastic Packages . . . . . . . . . . . . . .–65°C to +150°C
Ambient Temperature
with Power Applied . . . . . . . . . . . .–65°C to +125°C
Voltage with Respect to Ground
. . . . . . . . . . . . . . . . VCC (Note 1)–0.5 V to +2.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A9, OE#,
and RESET# (Note 2) . . . . . . . . . –0.5 V to +11.0 V
. . . . . . All other pins (Note 1)–0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3) . . . . . 100 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0
V for periods of up to 20 ns. See Figure 7. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage
transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8.
2. Minimum DC input voltage on pins A9, OE#, and RESET# is –0.5 V. During voltage transitions, A9, OE#, and RESET# may
overshoot VSS to –2.0 V for periods of up to 20 ns. See. Maximum DC input voltage on pin A9 is +11.0 V which may
overshoot to 12.5 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one
second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections
of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may
affect device reliability.
20 ns
20 ns
20 ns
0.0 V
VCC
+2.0 V
–0.5 V
VCC
+0.5 V
–2.0 V
2.0 V
20 ns
Figure 7. Maximum Negative
Overshoot Waveform
22
20 ns
20 ns
Figure 8. Maximum Positive
Overshoot Waveform
March 3, 2005
A d v a n c e
I n f o r m a t i o n
Operating Ranges
Commercial (C) Devices
VCC for regulated voltage range . +1.70 V to +2.2 V
Operating ranges define those limits between which
the functionality of the device is guaranteed.
Ambient Temperature (TA). . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA). . . . . . . –40°C to +85°C
VCC Supply Voltages
VCC for full voltage range . . . . . +1.65 V to +2.2 V
March 3, 2005
23
A d v a n c e
I n f o r m a t i o n
DC Characteristics
CMOS Compatible
Parameter
Description
Test Conditions
Min
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 11.0 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ICC1
VCC Active Read Current
(Notes 1, 2)
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
CE# = VIL, OE# = VIH,
Byte Mode
5 MHz
5
10
1 MHz
1
3
CE# = VIL, OE# = VIH,
Word Mode
5 MHz
5
10
1 MHz
1
3
20
25
mA
mA
ICC2
VCC Active Write Current
(Notes 2, 3, 5)
CE# = VIL, OE# = VIH
ICC3
VCC Standby Current (Note 2)
CE#, RESET# = VCC ± 0.2 V
1
5
µA
ICC4
VCC Reset Current (Note 2)
RESET# = VSS ± 0.2 V
1
5
µA
ICC5
Automatic Sleep Mode
(Notes 2, 3)
VIH = VCC ± 0.2 V;
VIL = VSS ± 0.2 V
1
5
µA
VIL
Input Low Voltage
–0.5
0.2 x VCC
V
VIH
Input High Voltage
0.8 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
9.0
11.0
V
IOL = 2.0 mA, VCC = VCC min
0.25
V
IOL = 100 µA, VCC = VCC min
0.1
V
VOL1
VOL2
VOH1
VOH2
VLKO
Output Low Voltage
Output High Voltage
VCC = 2.0 V
IOH = –2.0 mA, VCC = VCC min
0.7 x VCC
V
IOH = –100 µA, VCC = VCC min
VCC–0.1
V
Low VCC Lock-Out Voltage (Note
4)
1.2
1.5
V
Notes:
1. The ICC current listed is typically less than 1 mA/MHz, with OE# at VIH. Typical VCC is 2.0 V.
2. The maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 50 ns.
5. Not 100% tested.
24
March 3, 2005
A d v a n c e
I n f o r m a t i o n
DC Characteristics (Continued)
Zero Power Flash
Supply Current in mA
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
Supply Current in mA
8
6
2.2 V
4
1.8 V
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
Figure 10. Typical ICC1 vs. Frequency
March 3, 2005
25
A d v a n c e
I n f o r m a t i o n
Test Conditions
Table 7.
Test Specifications
Test Condition
All Speed Options
Unit
Output Load Capacitance, CL
(including jig capacitance)
30
pF
5
ns
0.0–2.0
V
Input timing measurement
reference levels
1.0
V
Output timing measurement
reference levels
1.0
V
Input Rise and Fall Times
Device
Under
Test
Input Pulse Levels
CL
Figure 11. Test Setup
Key to Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
2.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.0 V
Measurement Level
1.0 V
Output
0.0 V
Figure 12. Input Waveforms and Measurement Levels
26
March 3, 2005
A d v a n c e
I n f o r m a t i o n
AC Characteristics
Read Operations
Parameter
Speed Options
JEDEC
Std
Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
tGHQZ
Test Setup
-100R
-110
-120
-150
Unit
Min
100
110
120
150
ns
CE# = VIL
OE# = VIL
Max
100
110
120
150
ns
OE# = VIL
Max
100
110
120
150
ns
Output Enable to Output Delay
Max
35
45
50
65
ns
tDF
Chip Enable to Output High Z (Note 1)
Max
16
ns
tDF
Output Enable to Output High Z (Note 1)
Max
16
ns
Read
Min
0
ns
Toggle and
Data# Polling
Min
30
ns
Min
0
ns
tOEH
Output Enable
Hold Time (Note 1)
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
tAXQX
Notes:
1. Not 100% tested.
2. See Figure 11‚ on page 26 and Table 7 on page 26 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 13. Read Operations Timings
March 3, 2005
27
A d v a n c e
I n f o r m a t i o n
AC Characteristics
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
Test Setup
All Speed Options
Unit
tREADY
RESET# Pin Low (During Embedded
Algorithms) to Read or Write (See Note)
Max
20
µs
tREADY
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
RESET# High Time Before Read (See Note)
Min
200
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14. RESET# Timings
28
March 3, 2005
A d v a n c e
I n f o r m a t i o n
AC Characteristics
Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Speed Options
Description
Std
-100R
-110
-120
-150
10
Unit
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
50
55
60
60
ns
tFHQV
BYTE# Switching High to Output Active
Min
100
110
120
150
ns
CE#
OE#
BYTE#
BYTE#
Switching
from word
to byte
mode
DQ0–DQ14
tELFL
Data Output
(DQ0–DQ14)
Address
Input
DQ15
Output
DQ15/A-1
Data Output
(DQ0–DQ7)
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte
to word
mode
Data Output
(DQ0–DQ7)
DQ0–DQ14
Address
Input
DQ15/A-1
Data Output
(DQ0–DQ14)
DQ15
Output
tFHQV
Figure 15. BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 16. BYTE# Timings for Write Operations
March 3, 2005
29
A d v a n c e
I n f o r m a t i o n
AC Characteristics
Erase/Program Operations
Parameter
Speed Options
JEDEC
Std
Description
-100R
-110
-120
-150
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
100
110
120
150
ns
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
50
55
60
70
ns
tDVWH
tDS
Data Setup Time
Min
50
55
60
70
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
0
ns
tGHWL
tGHWL
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
tWHWH1
tWHWH1
Programming Operation (Notes 1, 2)
Byte
Typ
10
Word
Typ
12
tWHWH2
tWHWH2
Sector Erase Operation (Notes 1, 2)
Typ
2
sec
tVCS
VCC Setup Time
Min
50
µs
tRB
Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Min
200
ns
tBUSY
50
55
60
70
ns
ns
µs
Notes:
1. Not 100% tested.
2. See the Erase and Programming Performance‚ on page 38 section for more information.
30
March 3, 2005
A d v a n c e
I n f o r m a t i o n
AC Characteristics
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
A0h
Data
PD
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17. Program Operation Timings
March 3, 2005
31
A d v a n c e
I n f o r m a t i o n
AC Characteristics
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status‚ on page 18
2. Illustration shows device in word mode.
Figure 18. Chip/Sector Erase Operation Timings
32
March 3, 2005
A d v a n c e
I n f o r m a t i o n
AC Characteristics
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
Status Data
Status Data
Valid Data
True
High Z
DQ0–DQ6
Valid Data
True
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read
cycle.
Figure 19. Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ6/DQ2
tBUSY
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle.
Figure 20. Toggle Bit Timings (During Embedded Algorithms)
March 3, 2005
33
A d v a n c e
I n f o r m a t i o n
AC Characteristics
Enter
Embedded
Erasing
Erase
Suspend
Erase
WE#
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Resume
Erase
Suspend
Program
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 21. DQ2 vs. DQ6
Temporary Sector Unprotect
Parameter
JEDEC
Std
tVIDR
tRSP
Description
VID Rise and Fall Time
RESET# Setup Time for Temporary Sector
Unprotect
All Speed Options
Unit
Min
500
ns
Min
4
µs
10 V
RESET#
0 or 1.8 V
0 or 1.8 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 22. Temporary Sector Unprotect Timing Diagram
34
March 3, 2005
A d v a n c e
I n f o r m a t i o n
AC Characteristics
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Protect/Unprotect
Data
60h
1 µs
Valid*
Verify
60h
40h
Status
Sector Protect: 150 µs
Sector Unprotect: 15 ms
CE#
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 23. Sector Protect/Unprotect Timing Diagram
March 3, 2005
35
A d v a n c e
I n f o r m a t i o n
AC Characteristics
Alternate CE# Controlled Erase/Program Operations
Speed Options
Parameter
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
50
55
60
70
ns
tDVEH
tDS
Data Setup Time
Min
50
55
60
70
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
30
tWHWH1
tWHWH1
Programming Operation
(Notes 1, 2)
Byte
Typ
10
Word
Typ
12
tWHWH2
tWHWH2
Sector Erase Operation (Notes 1, 2)
Typ
2
-100R
-110
-120
-150
Unit
100
110
120
150
ns
0
50
55
ns
60
70
ns
ns
µs
sec
Notes:
1. Not 100% tested.
2. See the Erase and Programming Performance‚ on
page 38 section for more information.
36
March 3, 2005
A d v a n c e
I n f o r m a t i o n
AC Characteristics
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tCP
CE#
tWS
tWHWH1 or 2
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# =
complement of the data written, DOUT = data written
2. Figure indicates the last two bus cycles of command
sequence.
3. Word mode address used as an example.
Figure 24. Alternate CE# Controlled Write Operation Timings
March 3, 2005
37
A d v a n c e
I n f o r m a t i o n
Erase and Programming Performance
Parameter
Typ (Note
1)
Max (Note 2)
Unit
2
15
s
Sector Erase Time
Chip Erase Time
38
s
Byte Programming Time
10
300
µs
Word Programming Time
12
360
µs
Chip Programming Time
Byte Mode
5
40
s
(Note 3)
Word Mode
3.5
30
s
Comments
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 2.0 V VCC, 1,000,000 cycles. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 5 on page 18 for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
Latchup Characteristics
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
11.0 V
Input voltage with respect to VSS on all I/O pins
–0.5 V
VCC + 0.5 V
–100 mA
+100 mA
VCC Current
Includes all pins except VCC. Test conditions: VCC = 1.8 V, one pin at a time.
TSOP Pin and BGA Package Capacitance
Parameter Symbol
Parameter Description
Test Setup
CIN
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
CIN2
Control Pin Capacitance
VIN = 0
Typ
Max
Unit
TSOP
6
7.5
pF
Fine-pitch BGA
4.2
5.0
pF
TSOP
8.5
12
pF
Fine-pitch BGA
5.4
6.5
pF
TSOP
7.5
9
pF
Fine-pitch BGA
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Data Retention
Parameter
Minimum Pattern Data Retention Time
38
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
March 3, 2005
A d v a n c e
I n f o r m a t i o n
Physical Dimensions
TS048—48-Pin Standard TSOP
Dwg rev AA; 10/99
March 3, 2005
39
A d v a n c e
I n f o r m a t i o n
Physical Dimensions
FBA048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 6 x 8 mm Package
Dwg rev AF; 10/99
40
March 3, 2005
A d v a n c e
I n f o r m a t i o n
Revision Summary
Revision A + 3 (February 26, 2003)
Revision A (August 14, 2002)
Global
Initial Release.
Added 110 ns speed option.
Revision A+1 (August 28, 2002)
Distinctive Characteristics
Sector Protection/Unprotection
Updated Automatic Sleep Mode and standby mode
current values.
Changed beginning of second paragraph from, “The
primary method....” to read, “Sector protection/unprotection.”
Pin Configuration
Updated VCC low-end value.
Deleted third paragraph.
Ordering Information
FBB048—48-Ball Fine-Pitch Ball Grid Array (FBGA)
6 x 8 mm package
Changed WB package type to WA.
Changed number in row D in table from 9.00 mm to
8.0 mm.
Revision A + 2 (February 5, 2003)
Global
Changed fastest speed option from 103 ns to 100 ns,
regulated voltage, added 110 ns speed option standard voltage.
General Description
Changed first sentenced to indicate 48-pin TSOP
package option.
Command Definitions, Table 5
Removed TBD markers from device ID, Top Boot
Block to 70h.
DC Characteristics, CMOS Compatible
Updated VCC Standby and Reset currents Typ values,
and Automatic Sleep Mode Typ value.
Revision A+ 4 (March 18, 2003)
Ordering Information, Valid Combinations
Removed dashes from Order Numbers.
Revision A + 5 (March 3, 2005)
Ordering Information
Added Commercial and Industrial Pb-free Package
temperatures.
Valid Combinations for TSOP package
Added two package codes
Removed TBD markers from device ID, Bottom Boot
Block to FIh.
Valid Combination for FBGA package
Changed address bits A18–A11 to A17–A11.
Global
Physical Dimensions, 48-pin TSOP
Added Colophon.
Changed from Reverse to Standard TSOP package.
Updated Trademark information.
March 3, 2005
Added two package codes
41
A d v a n c e
I n f o r m a t i o n
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion LLC will not be liable to you and/or any third party for any claims or damages arising in connection with
above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from
such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions
on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks
Copyright ©2003-2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
42
March 3, 2005
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