VISHAY 81RIA80MPBF

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Vishay Semiconductors
Phase Control Thyristors (Stud Version), 80 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-209AC (TO-94)
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
TO-209AC (TO-94)
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
IT(AV)
80 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
VALUES
UNITS
80
A
85
°C
125
IT(RMS)
ITSM
I2t
50 Hz
1900
60 Hz
1990
50 Hz
18
60 Hz
16
VDRM/VRRM
A
kA2s
400 to 1200
Typical
tq
TJ
V
110
μs
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
40
400
500
80
800
900
120
1200
1300
80RIA
81RIA
Document Number: 94392
Revision: 17-Sep-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
IDRM/IRRM MAXIMUM
AT TJ = 125 °C
mA
15
www.vishay.com
1
80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 80 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 75 °C case temperature
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
I2t
UNITS
80
A
85
°C
125
1900
No voltage
reapplied
1990
100 % VRRM
reapplied
1675
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
18
16
12.7
t = 0.1 ms to 10 ms, no voltage reapplied
180.5
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.99
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
1.13
Low level value of on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
2.29
High level value of on-state slope resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
1.84
Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse
1.60
Maximum on-state voltage
VTM
IH
Typical latching current
IL
kA2s
11.7
Low level value of threshold voltage
Maximum holding current
A
1600
100 % VRRM
reapplied
t = 8.3 ms
Maximum I2t for fusing
VALUES
200
TJ = 25 °C, anode supply 12 V resistive load
400
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
TEST CONDITIONS
VALUES
UNITS
dI/dt
TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber
0.2 μF, 15 , gate pulse: 20 V, 65 , tp = 6 μs, tr = 0.5 μs
Per JEDEC standard RS-397, 5.2.2.6.
300
A/μs
Typical delay time
td
Gate pulse: 10 V, 15  source, tp = 6 μs, tr = 0.1 μs,
Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C
Typical turn-off time
tq
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs, VR = 50 V,
dV/dt = 20 V/μs, gate bias: 0 V 25 , tp = 500 μs
110
SYMBOL
TEST CONDITIONS
VALUES
UNITS
1
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = 125 °C exponential to 67 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 °C rated VDRM/VRRM applied
15
mA
www.vishay.com
2
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94392
Revision: 17-Sep-10
80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Phase Control Thyristors
(Stud Version), 80 A
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
PGM
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
Maximum DC gate current required to trigger
IGT
TEST CONDITIONS
12
TJ = TJ maximum, f = 50 Hz, d% = 50
3
3
TJ = TJ maximum, tp  5 ms
TJ = - 40 °C
270
TJ = 25 °C
120
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
TJ = - 40 °C
VGT
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
UNITS
W
A
V
mA
60
3.5
2.5
V
1.5
Maximum gate current/voltage not to
trigger is the maximum value which
will not trigger any unit with rated
VDRM anode to cathode applied
IGD
TJ = TJ maximum
DC gate voltage not to trigger
20
10
TJ = 125 °C
Maximum DC gate voltage required to trigger
VALUES
TJ = TJ maximum, tp  5 ms
VGD
6
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.30
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.1
K/W
Non-lubricated threads
15.5
(137)
Lubricated threads
14
(120)
Mounting torque, ± 10 %
Approximate weight
Case style
Document Number: 94392
Revision: 17-Sep-10
°C
130
See dimensions - link at the end of datasheet
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
N·m
(lbf · in)
g
TO-209AC (TO-94)
www.vishay.com
3
80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Phase Control Thyristors
(Stud Version), 80 A
Vishay Semiconductors
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.042
0.030
120°
0.050
0.052
90°
0.064
0.070
60°
0.095
0.100
30°
0.164
0.165
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Maximum Allowable Case Temperature (°C)
130
80RIA Series
RthJC (DC) = 0.30 K/W
120
110
Conduc tion Angle
100
30°
60°
90°
120°
90
180°
80
0
10 20
30 40
50 60 70
80 90
130
80RIA Series
RthJC (DC) = 0.30 K/W
120
110
Conduction Period
100
90
30°
80
60°
90°
120°
180°
DC
70
0
20
40
60
80
100
120
140
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
120
e lt
-D
K/
W
a
R
1.4
K/
W
RMSLimit
60
/W
4K
0.
70
1
=
80
A
90
W
K/
100
hS
R t
180°
120°
90°
60°
30°
110
6
0.
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
2K
/W
50
40
Conduction Angle
3 K/
30
80RIA Series
TJ = 125°C
20
10
W
5 K/ W
0
0
10
20
30
40
50
60
70
Average On-state Current (A)
80
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
www.vishay.com
4
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94392
Revision: 17-Sep-10
80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Maximum Average On-state Power Loss (W)
Phase Control Thyristors
(Stud Version), 80 A
Vishay Semiconductors
180
DC
180°
120°
90°
60°
30°
160
140
120
R
th
SA
100
80
=
0.
6K
/W
0.
4
K/
W
-D
e lt
a
1K
/W
1.4
K/ W
RMSLimit
Conduc tion Period
60
2 K/
W
3 K/ W
40
80RIA Series
TJ = 125°C
20
R
5 K/ W
0
0
20
40
60
80
100
120
Average On-state Current (A)
140
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
1800
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1600
1400
1200
1000
80RIA Series
800
1
10
100
2000
Maximum Non Repetitive Surge Current
1900
Versus Pulse Train Duration. Control
1800 Of Conduction May Not Be Maintained.
Initial TJ = 125°C
1700
No Voltage Reapplied
1600
Rated VRRM Reapplied
1500
1400
1300
1200
1100
1000
900
80RIA Series
800
700
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
1000
100
TJ = 25°C
TJ = 125°C
10
80RIA Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Document Number: 94392
Revision: 17-Sep-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Phase Control Thyristors
(Stud Version), 80 A
1
Steady State Value
R thJC = 0.30 K/W
Transient Thermal Impedance Z
thJC
(K/ W)
Vishay Semiconductors
(DC Operation)
0.1
0.01
80RIA Series
0.001
0.0001
0.001
0.01
0.1
1
10
Sq uare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65ohms
10
tr<=1 µs
VGD
0.1
0.001
IGD
(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms
Tj=-40 °C
Tj=125 °C
1
Tj=25 °C
Instantaneous Gate Voltage (V)
100
(1) (2)
(a)
Frequency Limited by PG(AV)
Device: 80RIA Series
0.01
(3) (4)
(b)
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
8
0
RIA
120
M
PbF
1
2
3
4
5
6
1
-
2
-
ITAV x 10 A
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
2 = Flag terminals (gate and auxiliary cathode terminals)
-
RIA = Essential part number
4
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
5
-
3
None = Stud base 1/2"-20UNF- 2 A threads
M = Stud base metric threads M12 x 1.75 E 6
6
-
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com
6
www.vishay.com/doc?95362
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94392
Revision: 17-Sep-10
Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for 80RIA Series
DIMENSIONS in millimeters (inches)
Glass metal seal
37
)M
IN
.
2.5 (0.10) MAX.
16.5 (0.65) MAX.
(0.
Ø 8.5 (0.33)
9 .5
Ø 4.3 (0.17)
Flexible lead
20 (0.79) MIN.
C.S. 16 mm2
(0.025 s.i.)
C.S. 0.4 mm2
Red silicon rubber
(0.0006 s.i.)
Red cathode
157 (6.18)
170 (6.69)
White gate
215 ± 10
(8.46 ± 0.39)
Fast-on terminals
Red shrink
55 (2.17)
MIN.
White shrink
AMP. 280000-1
REF-250
Ø 23.5 (0.92) MAX.
24 (0.94)
MAX.
10.0 (0.39) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Document Number: 95362
Revision: 17-Sep-10
For technical questions, contact: [email protected]
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1