VISHAY GI816

GI810 thru GI818
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
FEATURES
• Superectifier structure for high reliability condition
SUPERECTIFIER
• Cavity-free glass-passivated junction
®
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
DO-204AC (DO-15)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For general purpose of medium frequency rectification.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
30 A
trr
750 ns
IR
10 μA
VF
1.2 V
TJ max.
175 °C
MECHANICAL DATA
Case: DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GI810
GI811
GI812
GI814
GI816
GI817
GI818
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA= 75 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
TJ, TSTG
- 65 to + 175
°C
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage
1.0 A
Maximum DC reverse current at
rated DC blocking voltage
SYMBOL
VF
TA= 25 °C
TA= 100 °C
GI810
GI811
GI812
GI814
1.2
GI816
GI817
GI818
UNIT
V
10
IR
μA
100
Maximum reverse recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs
trr
750
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
25
pF
Document Number: 88628
Revision: 15-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GI810 thru GI818
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GI810
GI811
GI812
RJA (1)
Typical thermal resistance
GI814
GI816
GI817
GI818
45
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.425
54
4000
13" diameter paper tape and reel
0.425
73
2000
Ammo pack packaging
GI816-E3/54
GI816-E3/73
(1)
0.425
54
4000
13" diameter paper tape and reel
GI816HE3/73 (1)
0.425
73
2000
Ammo pack packaging
GI816HE3/54
Note
AEC-Q101 qualified
(1)
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
Instantaneous Forward Current (A)
Average Forward Current (A)
1.0
0.8
0.6
0.4
0.2
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
20
40
60
80
100
120
140
160
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.1
0.01
0.4
180
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 75 °C
8.3 ms Single Half Sine-Wave
(JEDEC Method)
30
20
10
0
Instantaneous Reverse Current (μA)
40
Peak Forward Surge Current (A)
1
10
TJ = 125 °C
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
1
10
100
0
20
40
60
80
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Characteristics
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2
100
For technical questions within your region, please contact one of the following:
Document Number: 88628
[email protected], [email protected], [email protected]
Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GI810 thru GI818
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
100
10
1
1
10
10
1
0.1
0.01
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
DIA.
1.0 (25.4)
MIN.
Document Number: 88628
Revision: 15-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Document Number: 91000
Revision: 11-Mar-11
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