UTC BU407-X-TA3-T Npn expitaxial planar transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BU407
NPN SILICON TRANSISTOR
NPN EXPITAXIAL PLANAR
TRANSISTOR
„
DESCRIPTION
The UTC BU407 is a NPN epitaxial planar transistor,
designed for use in TV Horizontal output and switching
applications.
„
1
TO-220
FEATURES
* High breakdown voltage
Lead-free:
BU407L
Halogen-free: BU407G
„
ORDERING INFORMATION
Normal
BU407-x-TA3-T
Ordering Number
Lead Free Plating
BU407L-x-TA3-T
Halogen Free
BU407G-x-TA3-T
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
Package
TO-220
Pin Assignment
1
2
3
B
C
E
Packing
Tube
1 of 3
QW-R203-020.B
BU407
„
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
VCBO
330
V
Collector to Emitter Voltage
VCEO
150
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
7
A
Base Current
IB
4
A
Collector Dissipation (Ta =25°С)
PC
60
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
θJC
Junction to Ambient
Junction to Case
„
TYP
MAX
70
2.08
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
Collector Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collect Cutoff Current’
Emitter Cutoff Current
DC Current Gain
Current Gain Bandwidth Product
„
MIN
SYMBOL
BVCEO
VCE(SAT)
VBE(SAT)
ICES
IEBO
hFE1
hFE2
hFE3
fT
TEST CONDITIONS
IC =100 mA, IB = 0
MIN
150
IC = 5 A, IB = 0.5 A
VCE =400 V
VBE = 6 V, IC = 0
IC = 500 mA, VCE = 5 V
IC = 2 A, VCE = 5 V
IC = 5 A, VCE = 5 V
IC= 500 mA, VCE = 10 V, f =1 MHz
25
35
10
10
TYP
MAX UNIT
V
1
V
1.2
V
5
mA
1
mA
200
MHZ
CLASSIFICATION OF hFE2
RANK
RANGE
B
35-85
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
C
75-125
D
115-200
2 of 3
QW-R203-020.B
BU407
NPN EPITAXIAL SILICON TRANSISTOR
Emitter Current,IE (µA)
Collector Current,IC (µA)
Collector Current,IC (µA)
TYPICAL CHARACTERISTICS
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R203-020.B
Similar pages