PHILIPS 1N914

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N914
High-speed diode
Product specification
Supersedes data of 1996 Sep 03
1999 May 26
Philips Semiconductors
Product specification
High-speed diode
1N914
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The 1N914 is a high-speed switching diode fabricated in planar technology, and
encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 100 V
handbook, halfpage
k
a
• Repetitive peak forward current:
max. 225 mA.
MAM246
The diode is type branded.
APPLICATIONS
• High-speed switching.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
−
100
V
−
75
V
−
75
mA
−
225
mA
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
250
mW
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
175
°C
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1999 May 26
2
Philips Semiconductors
Product specification
High-speed diode
1N914
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IF = 10 mA; see Fig.3
IR
reverse current
see Fig.5
MAX.
UNIT
1
V
VR = 20 V
25
nA
VR = 75 V
5
µA
VR = 20 V; Tj = 150 °C
50
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
4
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
8
ns
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
4
ns
when switched from IF = 50 mA; tr = 20 ns;
see Fig.8
2.5
V
Vfr
forward recovery voltage
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 26
3
Philips Semiconductors
Product specification
High-speed diode
1N914
GRAPHICAL DATA
MGD289
100
MBG464
600
handbook, halfpage
IF
(mA)
IF
(mA)
400
(1)
50
(2)
(3)
200
0
0
100
o
T amb ( C)
0
200
0
2
VF (V)
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 26
4
104
Philips Semiconductors
Product specification
High-speed diode
1N914
MGD006
103
handbook, halfpage
MGD004
1.2
handbook, halfpage
IR
(µA)
10
Cd
(pF)
2
1.0
(1)
(2)
(3)
10
0.8
1
0.6
10−1
10−2
0
100
Tj (oC)
0.4
200
0
(1) VR = 75 V; maximum values.
(2) VR = 75 V; typical values.
(3) VR = 20 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
1999 May 26
5
10
VR (V)
20
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed diode
1N914
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1999 May 26
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed diode
1N914
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
D
G1
L
L
DIMENSIONS (mm are the original dimensions)
UNIT
b
max.
D
max.
G1
max.
L
min.
mm
0.56
1.85
4.25
25.4
0
1
2 mm
scale
Note
1. The marking band indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
EIAJ
SOD27
A24
DO-35
SC-40
EUROPEAN
PROJECTION
ISSUE DATE
97-06-09
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 26
7
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© Philips Electronics N.V. 1999
SCA 65
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Printed in The Netherlands
115002/03/pp8
Date of release: 1999 May 26
Document order number:
9397 750 05883