LESHAN RADIO COMPANY, LTD. FFM101 – FFM107 1A 1A FAST RECOVERY SMA DIODES TYPE Marking FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 FF1 FF2 FF3 FF4 FF5 FF6 FF7 50 100 200 400 600 800 1000 V F (V) IF (A) VRRM(V) 1.3 1.0 IRMI(µA) IP8M(A) 5.0 Package Dimensions Trr(ns) 30 DO – 214AC 150 250 500 Trr I F =1A, I R = 0.5A, I RR = 0.25A Trr Test Conditions: I F = 1A, I R= 0.5A, I RR = 0.25A G B E A A B .110(2.8) .086(2.2) .067(1.7) .051(1.3) C .008 MAX (.2) D .091(2.3) .067(1.7) D C F H E .051(1.3) .008(0.2) F .059(1.5) .035(0.9) G .209(5.3) .185(4.7) H .059(1.5) .035(0.9) DO – 214AC 49A–1/2 LESHAN RADIO COMPANY, LTD. FFM101 – FFM107 1A RATING & CHARACTERISTIC CURVES OF 1A FAST RECOVERY SMA DIODES FIG.1–TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC (+) 25Vdc (APPROX) (-) 10 Ω NONINDUCTIVE NON. INDUCTIVE Trr +0.5A (-) D.U.T. 1Ω AVERAGE FORWARD CURRENT,(A) 50 Ω NONINDUCTIVE FIG. 2 – TYPICAL FORWARD CURRENT DERATING CURVE PULSE G E N E R AT O R (NOTE 2) OSCILLOSCOPE (NOTE 1) 0 -0.25A (+) NOTES:1.Rise Time=7ns max. Input Impedance=1megohm.22pF. 2.Rise Time=10ns max. Source Impedance=50 ohms. -1.0A 1.25 Single Phase Half Wave 60Hz Resistive or Inductive Load 1.00 0.75 0.50 0.25 0 25 SET TIME BASE FOR 50/100ns/cm 1cm 50 75 100 125 150 175 AMBIENT TEMPER ATURE, (ºC) FIG. 3 – TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) 100 TJ =25ºC 10 1.0 Pulse Width=300µs 1% Duty Cycle 0 .4 .6 .8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE,(V) FIG. 4 – MAXINUM NON-REPETITIVE FOWARD SURGE CURRENT FIG. 5 – TYPICAL JUNCTION CAPACITANCE 200 100 8.3ms Single Half Sine-Wave (JEDEC Method) 40 60 JUNCTION CAPACITANCE,(pF) PEAK FORWARD SURGE CURRENT,(A) 50 30 20 10 40 20 10 TJ =25ºC 6 4 2 1 .1 0 1 5 10 50 .2 .4 1.0 2 4 10 20 40 100 100 REVERSE VOLTAGE,(V) NUMBER OF CYCLES AT 60Hz 49A–2/2