LRC LMBT2222LT1G General purpose transistors npn silicon rohs requirements. Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LMBT2222LT1G
LMBT2222ALT1G
NPN Silicon
• We declare that the material of product compliance with RoHS requirements.
3
1
MAXIMUM RATINGS
Rating
2
Symbol
2222
2222A
Unit
Collector–Emitter Voltage
V CEO
30
40
Vdc
Collector–Base Voltage
V CBO
60
75
Vdc
Emitter–Base Voltage
V
5.0
6.0
Vdc
600
600
mAdc
Collector Current — Continuous
EBO
IC
SOT– 23
3
COLLECTOR
THERMAL CHARACTERISTICS
1
BASE
Characteristic
Symbol
Max
Unit
PD
225
mW
RθJA
PD
1.8
556
300
mW/°C
°C/W
mW
RθJA
2.4
417
mW/°C
°C/W
LMBT2222LT1G
M1B
3000/Tape & Reel
TJ , Tstg
–55 to +150
°C
LMBT2222LT3G
M1B
10000/Tape & Reel
LMBT2222ALT1G
1P
3000/Tape & Reel
LMBT2222ALT3G
1P
10000/Tape & Reel
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
2
EMITTER
ORDERING INFORMATION
Device
Junction and Storage Temperature
DEVICE MARKING
LMBT2222LT1G = M1B; LMBT2222ALT1G = 1P
Marking
Shipping
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Vdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
LMBT2222
(I C = 10 mAdc, I B = 0)
LMBT2222A
Collector–Base Breakdown Voltage
LMBT2222
(I C = 10 µAdc, I E = 0)
LMBT2222A
Emitter–Base Breakdown Voltage
LMBT2222
(I E = 10 µAdc, I C = 0)
LMBT2222A
Collector Cutoff Current
LMBT2222A
( V CE = 60 Vdc, I EB(off) = 3.0Vdc)
Collector Cutoff Current
(V CB = 50 Vdc, I E = 0)
LMBT2222
(V CB = 60 Vdc, I E = 0)
LMBT2222A
(V CB = 50 Vdc, I E = 0, T A = 125°C)
LMBT2222
(V CB = 60 Vdc, I E = 0, T A = 125°C)
LMBT2222A
Emitter Cutoff Current
(V EB = 3.0 Vdc, I C = 0)
LMBT2222A
Base Cutoff Current
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
LMBT2222A
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
30
—
40
––
60
—
Vdc
75
5.0
6.0
—
—
––
10
Vdc
––
––
––
––
0.01
0.01
10
10
I EBO
—
100
nAdc
I BL
—
20
nAdc
V
(BR)CBO
V
(BR)EBO
I
CEX
nAdc
µAdc
I CBO
1/6
LESHAN RADIO COMPANY, LTD.
LMBT2222LT1G
LMBT2222ALT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
35
50
75
35
100
50
30
40
––
––
—
—
300
––
––
—
LMBT2222
LMBT2222A
––
––
0.4
0.3
LMBT2222
LMBT2222A
––
––
1.6
1.0
LMBT2222
LMBT2222A
LMBT2222
––
0.6
––
1.3
1.2
2.6
LMBT2222A
––
2.0
Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 0.1 mAdc, V CE = 10 Vdc)
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc,T A= –55°C )
(I C = 150 mAdc, V CE = 10 Vdc) (3)
(I C = 150 mAdc, V CE = 1.0 Vdc) (3)
(I C = 500 mAdc, V CE = 10 Vdc)(3)
Collector–Emitter Saturation Voltage(3)
(I C = 150 mAdc, I B = 15 mAdc)
(I C = 500mAdc, I B = 50 mAdc)
Base–Emitter Saturation Voltage
(I C = 150 mAdc, I B = 15 mAdc)
(I C = 500 mAdc, I B = 50 mAdc)
hFE
LMBT2222A only
LMBT2222
LMBT2222A
––
VCE(sat)
Vdc
V BE(sat)
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4)
(I C = 20mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz)
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Small–Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz)
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Output Admittance(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz)
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
Curren Base Time Comstant
(V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz)
Noise Figure(VCE=10Vdc, IC=100µAdc, RS=1.0kΩ, f =1.0kHz)
LMBT2222
LMBT2222A
LMBT2222
LMBT2222A
LMBT2222A
LMBT2222A
LMBT2222A
LMBT2222A
LMBT2222A
LMBT2222A
LMBT2222A
LMBT2222A
LMBT2222A
LMBT2222A
f
250
300
––
––
––
2.0
0.25
–—
50
75
5.0
25
––
––
8.0
30
25
8.0
1.25
8.0
4.0
300
375
35
200
rb, C C
NF
––
––
150
4.0
T
C obo
C ibo
h ie
h re
h fe
h oe
MHz
pF
pF
kΩ
X 10
–4
—
µmhos
ps
dB
SWITCHING CHARACTERISTICS
Delay Time
(V CC = 30 Vdc, V EB(off) = – 0.5 Vdc
td
—
10
Rise Time
I C = 150 mAdc, I B1 = 15 mAdc)
tr
—
25
ns
Storage Time
(V CC = 30 Vdc, I C = 150 mAdc
ts
—
225
ns
Fall Time
I B1 = I B2 = 15 mAdc)
tf
—
60
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
4.f T is defined as the frequency at which h fe extrapolates to unity.
2/6
LESHAN RADIO COMPANY, LTD.
LMBT2222LT1G
LMBT2222ALT1G
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
1.0 to 100µs,
DUTY CYCLE ~
~ 2%
+ 16 V
200
1.0 to 100µs,
DUTY CYCLE ~
~ 2%
+ 16 V
200
1.0 k
1.0 k
0
0
– 2.0V
C S *< 10 pF
–14 V
C S* < 10 pF
< 20 ns
<2.0 ns
1N914
– 4.0 V
Scope rise time < 4.0ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
1000
h FE , DC CURRENT GAIN
700
500
V CE= 10 V
V CE=1.0 V
T J = +125°C
300
200
+25°C
100
70
–55°C
50
30
20
10
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
20
300
500
700
1.0k
I C , COLLECTOR CURRENT (mA)
V CE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
1.0
T J = 25°C
0.8
0.6
I C=1.0 mA
0.4
500mA
100mA
10 mA
0.2
0
0.005
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
I B , BASE CURRENT (mA)
Figure 4. Collector Saturation Region
3/6
LESHAN RADIO COMPANY, LTD.
LMBT2222LT1G
200
70
70
t r @V CC= 30V
t d@V EB(off) = 2.0V
t d@V EB(off) =0
30
20
10
7.0
5.0
t ’s= t s–1/8 t f
30
tf
20
10
7.0
3.0
2.0
5.0
5.0 7.0
10
20
30
50
70
100
200
300
500
5.0 7.0
10
30
50
70
100
200
300
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Turn - Off Time
500
10
R S = OPTIMUM
I C = 1.0 mA, R S = 150 Ω
8
8
NF, NOISE FIGURE (dB)
I C = 500 µA, R S = 200 Ω
I C = 100 µA, R S = 2.0 kΩ
I C = 50 µA, R S = 4.0 kΩ
6
f = 1.0 kHz
RS = SOURCE
RS = RESISTANCE
4
2
0
0.01 0.02
0.2
0.5
1.0
2.0
5.0 10
20
50
6
4
2
100
50
100
200
500
1.0k
2.0k
5.0k
10k
20k
50k 100k
f , FREQUENCY (kHz)
R S, SOURCE RESISTANCE (kΩ)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
20
C eb
10
7.0
5.0
C cb
3.0
2.0
0.1
I C=50 µA
100 µA
500 µA
1.0 mA
0
0.05 0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
f T ,CURRENT– GAIN BANDWIDTH PRODUCT (MHz)
NF, NOISE FIGURE (dB)
20
I C , COLLECTOR CURRENT (mA)
10
CAPACITANCE (pF)
V CC= 30V
I C/ I B= 10
I B1 = I B2
TJ= 25°C
50
t , RISE TIME (ns)
50
t , TIME (ns)
100
I C /I B = 10
TJ= 25°C
100
LMBT2222ALT1G
500
V CE = 20 V
T J = 25°C
300
200
100
70
50
1.0
2.0
3.0
5.0
7.0
210
20
30
50
70 100
REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 9. Capacitance
Figure 10. Current– Gain Bandwidth Product
4/6
LESHAN RADIO COMPANY, LTD.
LMBT2222LT1G
10
LMBT2222ALT1G
+0.5
T J = 25°C
0
V BE(sat) @ I C /I B =10
COEFFICIENT (mV/ °C)
V, VOLTAGE ( VOLTS )
0.8
1.0 V
0.6
V BE(on) @ V CE =10 V
0.4
0.2
R θVC for V CE(sat)
– 0.5
–1.0
–1.5
R θVB for V BE
–2.0
V CE(sat) @ I C /I B =10
0
– 2.5
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50 100
200
500 1.0k
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
500
5/6
LESHAN RADIO COMPANY, LTD.
LMBT2222LT1G
LMBT2222ALT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
6/6
Similar pages