ASI C1-12 Npn silicon rf power transistor Datasheet

C1-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The C1-12 is Designed for 12.5 Volt
supply. Applications from 450 to 512
MHz.
PACKAGE STYLE .280 4L PILL
A
FEATURES:
E
• PG = 11 dB Typ. at 1.1 W/470 MHz
• ηC = 65 % Typ. at 1.1 W/470 MHz
• Omnigold™ Metalization System
C
ØB
B
E
ØC
MAXIMUM RATINGS
D
250 mA
IC
E
VCBO
36 V
VCEO
28 V
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
MAXIMUM
VEBO
4.0 V
PDISS
5.0 W @ TC = 25 °C
C
.275 / 6.99
.285 / 7.24
D
.004 / 0.10
.006 / 0.15
TJ
-65 °C to +200 °C
E
.050 / 1.27
.060 . 1.52
F
.118 / 3.00
.130 / 3.30
TSTG
-65 °C to +150 °C
θJC
35 °C/ W
1.055 / 26.80
B
CHARACTERISTICS
ORDER CODE: ASI
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
F
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 5.0 mA
14.5
V
BVCES
IC = 5.0 mA
37
V
BVEBO
IE = 5.0 mA
4.0
V
hFE
VCE = 6.0 V
COB
VCB = 12 V
PG
ηC
VCE = 12.5 V
IC = 100 mA
10
f = 1.0 MHz
POUT = 1.1 W
f = 470 MHz
100
---
3.0
pF
11
dB
%
65
Pin = 0.1 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. 0
1/1
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