Fairchild FDU8796F071 N-channel powertrench mosfet 25v, 35a, 5.7mohm Datasheet

LE
A
REE I
DF
M ENTATIO
LE
N
MP
FDD8796/FDU8796
N-Channel PowerTrench® MOSFET
25V, 35A, 5.7mΩ
General Description
Features
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
„ Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A
„ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A
„ Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V
„ Low gate resistance
Application
„ Avalanche rated and 100% tested
„ RoHS Compliant
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
D
G
S
Short Lead I-PAK
I-PAK
G D S
(TO-251AA)
S
MOSFET Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
Ratings
25
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current
35
ID
-Continuous (Package Limited)
-Continuous (Die Limited)
98
-Pulsed
(Note 1)
EAS
Single Pulse Avalanche Energy
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature
A
305
(Note 2)
91
mJ
88
W
-55 to 175
°C
°C/W
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case TO_252, TO_251
1.7
RθJA
Thermal Resistance, Junction to Ambient TO_252, TO_251
100
°C/W
RθJA
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
52
°C/W
Package Marking and Ordering Information
Device Marking
FDD8796
Device
FDD8796
Package
TO-252AA
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
FDU8796
FDU8796
TO-251AA
N/A (Tube)
N/A
75 units
FDU8796
FDU8796_F071
TO-251AA
N/A (Tube)
N/A
75 units
©2006 Fairchild Semiconductor Corporation
FDD8796/FDU8796 Rev. B
1
www.fairchildsemi.com
FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
March 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 20V
VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±20V
25
V
mV/°C
7
1
TJ = 150°C
250
µA
±100
nA
2.5
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
-6.7
VGS = 10V, ID = 35A
4.5
5.7
VGS = 4.5V, ID = 35A
6.0
8.0
VDS = 10V, ID = 35A
TJ = 175°C
6.9
9.5
1960
2610
pF
455
605
pF
315
475
pF
rDS(on)
Drain to Source On Resistance
1.2
1.8
mV/°C
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 13V, VGS = 0V,
f = 1MHz
f = 1MHz
Ω
1.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain Charge
VDD =13V, ID = 35A
VGS = 10V, RGS = 20Ω
VGS = 0 to10V
VGS = 0 to 5V VDD =13V,
ID = 35A,
Ig = 1.0mA
10
20
ns
24
39
ns
99
158
ns
57
91
ns
37
52
nC
19
27
nC
6
nC
6
nC
Drain-Source Diode Characteristics
VGS = 0V, IS = 35A
0.9
1.25
VGS = 0V, IS = 15A
0.8
1.0
V
Reverse Recovery Time
IF = 35A, di/dt = 100A/µs
30
45
ns
Reverse Recovery Charge
IF = 35A, di/dt = 100A/µs
23
35
nC
VSD
Source to Drain Diode Voltage
trr
Qrr
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V.
FDD8796/FDU8796 Rev. B
2
V
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FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
ID, DRAIN CURRENT (A)
60
VGS = 10V
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
40
VGS = 3.5V
30
20
VGS = 3V
10
0
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
70
ID = 35A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
VGS = 3.5V
2.0
VGS = 4.5V
1.5
1.0
0.5
VGS = 10V
0
10
20
30
40
50
ID, DRAIN CURRENT(A)
60
70
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID =35A
12
10
TJ = 175oC
8
6
4
TJ = 25oC
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to Source
Voltage
100
IS, REVERSE DRAIN CURRENT (A)
70
ID, DRAIN CURRENT (A)
2.5
2
200
Figure 3. Normalized On Resistance vs Junction
Temperature
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
60
50
TJ = 175oC
40
30
TJ = 25oC
20
TJ = -55oC
10
0
3.0
14
1.8
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3V
3.5
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
rDS(on), ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On Region Characteristics
4.0
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
10
TJ = 175oC
TJ = -55oC
1
TJ = 25oC
0.1
0.01
1E-3
0.0
0.3
0.6
0.9
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
FDD8796/FDU8796 Rev. B
VGS = 0V
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
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FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
4000
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 10V
6
VDD = 13V
4
VDD = 16V
2
Coss
Crss
f = 1MHz
VGS = 0V
0
0
10
20
30
Qg, GATE CHARGE(nC)
100
0.1
40
Figure 7. Gate Charge Characteristics
100
10
ID, DRAIN CURRENT (A)
TJ = 25oC
TJ = 125oC
TJ = 150oC
80
VGS = 10V
60
VGS = 4.5V
40
20
o
RθJC = 1.7 C/W
1
0.01
0.1
1
10
0
25
100 300
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching
Capability
P(PK), PEAK TRANSIENT POWER (W)
10000
10us
100
100us
10
LIMITED BY
PACKAGE
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
1
1ms
SINGLE PULSE
TJ = MAX RATED
10ms
DC
TC = 25oC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 11. Forward Bias Safe Operating Area
FDD8796/FDU8796 Rev. B
175
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
1000
ID, DRAIN CURRENT (A)
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
50
IAS, AVALANCHE CURRENT(A)
1000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
100
50 -5
10
I = I25
175 – TC
----------------------150
SINGLE PULSE
-4
10
-3
-2
-1
10
10
10
t, PULSE WIDTH (s)
0
10
1
10
Figure 12. Single Pulse Maximum Power
Dissipation
4
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FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
0.1
DUTY CYCLE-DESENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
10
-3
-2
10
10
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
FDD8796/FDU8796 Rev. B
5
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FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
FDD8796/FDU8796 Rev. B
6
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FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
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