ASI MRF951V3 Npn silicon rf transistor Datasheet

MRF951V3
NPN SILICON RF TRANSISTOR
DESCRIPTION:
PACKAGE STYLE
The ASI MRF951V3 is Designed for
high gain. Low noise small-signal
amplifiers applications up to 2.0 GHz.
Dim. Are in mm
FEATURES:
• Low Noise Figure
• High Gain
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
100 mA
VCBO
20 V
VCEO
10 V
VEBO
1.5 V
PDISS
1.0 W @ TC = 25 °C
TJ
-65 °C to +150 °C
TSTG
-65 °C to +150 °C
θJC
100 °C/W
CHARACTERISTICS
SYMBOL
Leads 1 and 3 = Emitter
2 = Collector
4 = Base
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 0.1 mA
20
V
BVCEO
IC = 0.1 mA
10
V
ICBO
VCB = 10 V
0.1
µA
IEBO
VEB = 1.0 V
0.1
µA
hFE
VCE = 6.0 V
200
---
Ccb
VCB = 10 V
GNF
NF50Ω
VCE = 6.0 V
VCE = 6.0 V
IC = 5.0 mA
IC = 5.0 mA
IC = 5.0 mA
50
f = 1.0 MHz
0.45
f = 1.0 GHz
14
f = 2.0 GHz
9.0
f = 1.0 GHz
1.9
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
pF
dB
2.8
dB
REV. A
1/1
Similar pages