DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. andbook, halfpage 2 handbook, halfpage APPLICATIONS • Converters 1 • Inverters • Switching regulators MBB008 3 • Motor control systems. MBK106 1 2 3 PINNING PIN DESCRIPTION 1 base 2 collector; connected to mounting base 3 emitter Fig.1 Simplified outline (TO-220AB) and symbol. QUICK REFERENCE DATA SYMBOL VCESM VCEO PARAMETER CONDITIONS collector-emitter peak voltage MAX. UNIT VBE = 0 BUT12 850 V BUT12A 1000 V BUT12 400 V BUT12A 450 V 1.5 V BUT12 6 A BUT12A 5 A 8 A collector-emitter voltage open base VCEsat collector-emitter saturation voltage ICsat collector saturation current see Fig.8 IC collector current (DC) ICM collector current (peak value) see Fig. 4 20 A Ptot total power dissipation Tmb ≤ 25 °C; see Fig.2 125 W tf fall time resistive load; see Figs 12 and 13 0.8 µs see Figs 3 and 4 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base 1997 Aug 13 1 VALUE UNIT 1 K/W Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER CONDITIONS collector-emitter peak voltage VCEO MAX. UNIT VBE = 0 BUT12 − 850 V BUT12A − 1000 V BUT12 − 400 V BUT12A − 450 V BUT12 − 6 A BUT12A − 5 A A collector-emitter voltage ICsat MIN. open base collector saturation current IC collector current (DC) see Figs 3 and 4 − 8 ICM collector current (peak value) see Fig. 4 − 20 A IB base current (DC) − 4 A IBM base current (peak value) − 6 A Ptot total power dissipation − 125 W Tstg storage temperature Tmb ≤ 25 °C; see Fig.2 −65 +150 °C Tj junction temperature − 150 °C MGD283 MGB892 10 120 handbook, halfpage handbook, halfpage Ptot max (%) IC (A) 80 5 40 BUT12F BUT12AF 0 0 0 50 100 Tmb (oC) 0 150 400 800 VCE (V) 1200 VBE = −1 to −5 V; Tc = 100 °C. Fig.2 Power derating curve. 1997 Aug 13 Fig.3 Reverse bias SOAR. 2 Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 6 and 7 BUT12 BUT12A VCEsat VBEsat ICES MIN. TYP. MAX. UNIT 400 − − V 450 − − V collector-emitter saturation voltage BUT12 IC = 6 A; IB = 1.2 A; see Figs 8 and 10 − − 1.5 V BUT12A IC = 5 A; IB = 1 A; see Figs 8 and 10 − − 1.5 V BUT12 IC = 6 A; IB = 1.2 A; see Fig.8 − − 1.5 V BUT12A IC = 5 A; IB = 1 A; see Fig.8 − − 1.5 V VCE = VCESmax; VBE = 0; note 1 − − 1 mA VCE = VCESmax; VBE = 0; Tj = 125 °C; note 1 − − 3 mA mA base-emitter saturation voltage collector-emitter cut-off current IEBO emitter-base cut-off current VEB = 9 V; IC = 0 − − 10 hFE DC current gain VCE = 5 V; IC = 10 mA; see Fig.11 10 18 35 VCE = 5 V; IC = 1 A; see Fig.11 10 20 35 Switching times resistive load (see Figs 12 and 13) ton ts tf turn-on time BUT12 ICon = 6 A; IBon = −IBoff = 1.2 A − − 1 µs BUT12A ICon = 5 A; IBon = −IBoff = 1 A − − 1 µs BUT12 ICon = 6 A; IBon = −IBoff = 1.2 A − − 4 µs BUT12A ICon = 5 A; IBon = −IBoff = 1 A − − 4 µs BUT12 ICon = 6 A; IBon = −IBoff = 1.2 A − − 0.8 µs BUT12A ICon = 5 A; IBon = −IBoff = 1 A − − 0.8 µs storage time fall time Switching times inductive load (see Figs 14 and 15) ts tf storage time BUT12 ICon = 6 A; IBon = 1.2 A; VCL = 250 V; Tc = 100 °C − 1.9 2.5 µs BUT12A ICon = 5 A; IBon = 1 A; VCL = 300 V; Tc = 100 °C − 1.9 2.5 µs BUT12 ICon = 6 A; IBon = 1.2 A; VCL = 250 V; Tc = 100 °C − 200 300 ns BUT12A ICon = 5 A; IBon = 1 A; VCL = 300 V; Tc = 100 °C − 200 300 ns fall time Note 1. Measured with a half-sinewave voltage (curve tracer). 1997 Aug 13 3 Philips Semiconductors Product specification Silicon diffused power transistors andbook, full pagewidth BUT12; BUT12A MGB945 102 IC (A) δ = 0.01 tp = 20 µs ICM max 10 IC max (1) II 50 µs 100 µs 1 200 µs 500 µs III I (2) 1 ms 10−1 10−2 2 ms 5 ms III IC (A) 10 ms 20 ms BUT12 BUT12A DC IV BUT12 BUT12A 10−2 10 102 103 VCE (V) Tmb < 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits. Fig.4 Forward bias SOAR. 1997 Aug 13 4 104 10−3 400 1000 VCE (V) Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A MGB862 10 handbook, full pagewidth Zth j−mb (K/W) 1 δ=1 0.75 0.50 0.33 0.20 0.10 10−1 0.05 0.02 0.01 0 10−2 10−3 10−2 10−1 1 10 102 tp (ms) 103 Fig.5 Transient thermal impedance. handbook, halfpage handbook,IC halfpage + 50 V MGE239 (mA) 100 to 200 Ω 250 L 200 horizontal oscilloscope 100 vertical 6V 30 to 60 Hz Fig.6 1997 Aug 13 300 Ω 1Ω 0 MGE252 Test circuit for collector-emitter sustaining voltage. Fig.7 5 VCE (V) min VCEOsust Oscilloscope display for collector-emitter sustaining voltage. Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A MGB914 2.0 handbook, full pagewidth VBEsat VCEsat (V) 1.5 1.0 (1) (2) 0.5 (3) (4) 0 10−1 IC/IB = 5. 10 1 (1) VBE; Tj = 25 °C. (2) VBE; Tj = 100 °C. 102 IC (A) (3) VCE; Tj = 100 °C. (4) VCE; Tj = 25 °C. Fig.8 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values. MGB911 1.6 handbook, full pagewidth VBE (V) 1.4 (1) 1.2 (2) (3) 1.0 0.8 0 Tj = 25 °C. (1) IC = 8 A. 0.5 1 1.5 2 2.5 (2) IC = 6 A. (3) IC = 3 A. Fig.9 Base-emitter voltage as a function of base current; typical values. 1997 Aug 13 6 IB (A) 3 Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A MGB872 10 (1) (2) MBC096 102 handbook, halfpage handbook, halfpage (3) VCEsat hFE (V) VCE = 5 V 1V 1 10 10−1 10−2 10−1 1 IB (A) 1 10−2 10 10−1 1 10 2 IC (A) 10 (1) IC = 3 A. (2) IC = 6 A. (3) IC = 8 A. Tj = 25 °C; solid line: typical values; dotted line: maximum values. Fig.10 Collector-emitter saturation voltage as a function of base current. Fig.11 DC current gain; typical values. handbook, halfpage MBB731 tr ≤30 ns IB on 90% IB 10% VCC handbook, halfpage t IB off RL VIM RB 0 D.U.T. tp T IC on 90% IC MGE244 10% ton VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. tr ≤ 20 ns. Fig.13 Switching time waveforms with resistive load. Fig.12 Test circuit resistive load. 1997 Aug 13 tf ts 7 t Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A handbook, halfpage tr IB on 90% IB 10% VCC handbook, halfpage t LC +IB −IB off VCL LB D.U.T. IC on 90% −VBE MGE246 IC 10% ts toff VCL = up to 1000 V; VCC = 30 V; VBE = −1 to −5 V; LB = 1 µH; LC = 200 µH. Fig.14 Test circuit inductive load and reverse bias SOAR. 1997 Aug 13 t tf MGE238 Fig.15 Switching time waveforms with inductive load. 8 Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A PACKAGE OUTLINE Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 E SOT78 A A1 P q D1 D L1 L2(1) Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max. P q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 1997 Aug 13 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 TO-220 9 Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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