MOSFET SMD Type N-Channel MOSFET AO3424-HF (KO3424-HF) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● ID = 3.8 A (VGS = 10 V) 1 ● RDS(ON) ＜ 55mΩ (VGS = 10V) 0.55 ● VDS (V) = 30V +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 ■ Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● RDS(ON) ＜ 65mΩ (VGS = 4.5V) +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● RDS(ON) ＜ 85mΩ (VGS = 2.5V) 0-0.1 Pb−Free Lead Finish +0.1 0.38 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a 1. Gate 2. Source 3. Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA Unit V 3.8 3.1 A 15 1.4 0.9 W 90 125 RthJC 80 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO3424-HF (KO3424-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Gate Threshold Voltage IGSS VGS(th) Test Conditions ID=250 uA, VGS=0V Min Typ VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±12V VDS=VGS , ID=250μA On state drain current RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=10V, ID=3.8A 0.5 VGS=2.5V, ID=1A 85 VGS=10V, VDS=5V VDS=5V, ID=3.8A 14 285 VGS=0V, VDS=15V, f=1MHz 25 45 10 25 VGS=0V, VDS=0V, f=1MHz 2.1 6.5 10 4.7 td(on) 3.5 Turn-On Rise Time tr Turn-Off DelayTime td(off) Maximum Body-Diode Continuous Current VGS=10V, VDS=15V, RL=3.95Ω,RG=3Ω IF= 3.8A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking AT** F www.kexin.com.cn Ω nC 1.5 ns 17.5 2.5 IS VSD pF 12 0.95 Turn-On DelayTime Qrr S 185 VGS=10V, VDS=15V, ID=3.8A mΩ A 1.6 Diode Forward Voltage 2 15 Qgd Body Diode Reverse Recovery Charge V 65 Gate Drain Charge tf nA 1.5 VGS=4.5V, ID=3.5A Qgs trr ±100 84 TJ=125℃ Gate Source Charge Turn-Off Fall Time uA 55 Qg Body Diode Reverse Recovery Time Unit V VGS=10V, ID=3.8A Static Drain-Source On-Resistance Max 30 8.5 11 2.6 3.5 nC 1.5 A 1 V MOSFET SMD Type N-Channel MOSFET AO3424-HF (KO3424-HF) ■ Typical Characterisitics 15 10 10V 3V 12 2.5V 8 4.5V 9 6 ID(A) ID (A) VDS=5V 6 VGS=2.0V 125°C 4 25°C 2 3 0 0 0 1 2 3 4 0 5 80 1 1.5 2 2.5 3 Normalized On-Resistance 1.8 VGS=2.5V 70 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 60 VGS=4.5V 50 40 VGS=10V VGS=4.5V ID=3.5A 1.6 1.4 VGS=10V 17 ID=3.8A 5 1.2 VGS=2.5V ID=1A 1 0.8 30 0 2 0 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 120 4 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 ID=3.8A 1.0E+01 100 80 60 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 1.0E-01 125°C 1.0E-02 1.0E-03 40 25°C 25°C 1.0E-04 1.0E-05 20 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO3424-HF (KO3424-HF) ■ Typical Characterisitics 10 400 VDS=15V ID=3.8A 350 300 Capacitance (pF) VGS (Volts) 8 6 4 250 Ciss 200 150 100 2 Coss 50 0 Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25°C ID (Amps) RDS(ON) limited 10µs 100µs 1.0 0.1 1ms 10ms TJ(Max)=150°C TA=25°C Power (W) 1000 10.0 10 10s DC 0.0 0.01 0.1 1 VDS (Volts) . 10 1 0.00001 100 Zθ JA Normalized Transient Thermal Resistance 1 0.001 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 www.kexin.com.cn 100 1000