Renesas H5N2501LSTL-E Silicon n channel mos fet high speed power switching Datasheet

Preliminary Datasheet
H5N2501LD, H5N2501LS, H5N2501LM
Silicon N Channel MOS FET
High Speed Power Switching
R07DS0056EJ0300
(Previous: REJ03G1250-0200)
Rev.3.00
Jul 23, 2010
Features
 Low on-resistance
RDS(on) = 0.14  typ. (at ID = 9 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
(Package name LDPAK(L))
(Package name LDPAK(S)-(1))
4
2
4
4
1
1
RENESAS Package code: PRSS0004AE-C
(Package name LDPAK(S)-(2))
2
1
3
H5N2501LS
3
2
3
H5N2501LM
H5N2501LD
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
Ratings
250
Unit
V
VGSS
ID
30
18
72
18
18
20.25
75
1.67
150
–55 to +150
V
A
A
A
A
mJ
W
C/W
C
C
ID (pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
ch-c
Tch
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
R07DS0056EJ0300 Rev.3.00
Jul 23, 2010
Page 1 of 7
H5N2501LD, H5N2501LS, H5N2501LM
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
RDS(on)
Min
250
—
—
3.0
8
—
Typ
—
—
—
—
14
0.14
Max
—
1
0.1
4.5
—
0.18
Unit
V
A
A
V
S

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
1350
170
50
30
65
95
18
45
8
22
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
Body-Drain diode reverse recovery
charge
Qrr
—
—
—
0.9
160
1.0
1.4
—
—
V
ns
C
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
Test conditions
ID = 10 mA, VGS = 0
VDS = 250 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 9 A, VDS = 10 V Note4
ID = 9 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 9 A
VGS = 10 V
RL = 13.9 
Rg = 10 
VDD = 200 V
VGS = 10 V
ID = 18 A
IF = 18 A, VGS = 0 Note4
IF = 18 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
R07DS0056EJ0300 Rev.3.00
Jul 23, 2010
Page 2 of 7
H5N2501LD, H5N2501LS, H5N2501LM
Preliminary
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
50
10
100
PW
=
10
10
0
1
Drain Current ID (A)
Drain Current ID (A)
1000
μs
μs
Operation in this
area is limited by
RDS(on)
0.1
Ta = 25°C
1 shot
0.01
0.1
10
100
8V
40
6.5 V
30
6V
20
VGS = 5.5 V
10
1000
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
−25°C
0
0
2
4
6
8
1
VGS = 10 V
Ta = 25°C
Pulse Test
0.1
0.01
1
10
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
0.5
100
1000
VGS = 10 V
Pulse Test
0.4
ID = 18 A
9A
0.3
0.2
5A
0.1
0
−25
Reverse Recovery Time trr (ns)
Drain Current ID (A)
10 V
0
1
50
Static Drain to Source on State Resistance
RDS(on) (Ω)
Ta = 25°C
Pulse Test
VGS = 10 V
Ta = 25°C
Pulse Test
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0
25
50
75
Case Temperature
R07DS0056EJ0300 Rev.3.00
Jul 23, 2010
100 125 150
Tc (°C)
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 7
H5N2501LD, H5N2501LS, H5N2501LM
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
100
Crss
VGS = 0
f = 1 MHz
10
0
20
60
80
16
VGS
300
12
VDD = 200 V
100 V
50 V
VDS
200
100
100
20
40
8
4
VDD = 200 V
100 V
50 V
0
60
80
0
100
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
VGS = 0
Ta = 25°C
40 Pulse Test
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current IDR (A)
ID = 18 A
Ta = 25 °C
0
40
50
30
20
10
0
0
400
Gate to Source Voltage VGS (V)
Ta = 25°C
Drain to Source Voltage VDS (V)
Capacitance C (pF)
10000
Dynamic Input Characteristics (Typical)
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0056EJ0300 Rev.3.00
Jul 23, 2010
VDS = 10 V
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
−25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 4 of 7
H5N2501LD, H5N2501LS, H5N2501LM
Preliminary
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
θch – c (t) = γ s (t) • θch – c
θch – c = 1.67°C/W, Tc = 25°C
0.1 0.1
0.05
PDM
2
0.03 0.0
1
0
e
.
0
uls
tp
o
h
1s
0.01
10 μ
100 μ
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
10 Ω
Switching Time Waveform
D.U.T.
Vin
Vout
Vin
10 V
VDD
= 125 V
10%
10%
90%
td(on)
R07DS0056EJ0300 Rev.3.00
Jul 23, 2010
10%
RL
tr
90%
td(off)
tf
Page 5 of 7
H5N2501LD, H5N2501LS, H5N2501LM
Preliminary
Package Dimensions
 H5N2501LD
JEITA Package Code
⎯
RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
4.44 ± 0.2
(1.4)
Package Name
LDPAK(L)
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.4 ± 0.1
 H5N2501LS
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.]
1.30g
7.8
6.6
(1.5)
10.0
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(1)
2.2
1.37 ± 0.2
2.54 ± 0.5
R07DS0056EJ0300 Rev.3.00
Jul 23, 2010
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Page 6 of 7
H5N2501LD, H5N2501LS, H5N2501LM
Preliminary
 H5N2501LM
JEITA Package Code
⎯
RENESAS Code
PRSS0004AE-C
Previous Code
LDPAK(S)-(2) / LDPAK(S)-(2)V
MASS[Typ.]
1.35g
(1.4)
4.44 ± 0.2
7.8
6.6
(2.3)
2.49 ± 0.2
7.8
7.0
+ 0.3
– 0.5
1.3 ± 0.15
10.0
(1.5)
8.6 ± 0.3
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(2)
0.2
0.1 +– 0.1
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part No.
H5N2501LD-E
H5N2501LSTL-E
H5N2501LMTL-E
R07DS0056EJ0300 Rev.3.00
Jul 23, 2010
Quantity
300 pcs
1000 pcs
1000 pcs
Shipping Container
Box (Tube)
Taping
Taping
Page 7 of 7
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