STMicroelectronics BYV52 High efficiency fast recovery rectifier diode Datasheet

BYV52/PI

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
A1
K
A2
DESCRIPTION
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, or TOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
SOT93
(Plastic)
isolated
TOP3I
(Plastic)
BYV52-200
BYV52PI-200
ABSOLUTE MAXIMUM RATINGS
Symbol
IF(RMS)
IF(AV)
Parameter
Average forward current SOT93
δ = 0.5
TOP3I
Surge non repetitive forward current
Tstg
Tj
Storage and junction temperature range
Symbol
October 1999
Unit
Per diode
50
A
Tc=110°C
Per diode
30
A
Tc=90°C
Per diode
30
tp=10ms
sinusoidal
Per diode
500
A
- 40 to + 150
- 40 to + 150
°C
°C
RMS forward current
IFSM
VRRM
Value
Parameter
Repetitive peak reverse voltage
Ed : 2C
Value
Unit
200
V
1/6
BYV52/PI
THERMAL RESISTANCE
Symbol
Rth (j-c)
Parameter
Junction to case
SOT93
Value
Unit
1.2
°C/W
Per diode
0.75
Total
TOP3I
Rth (c)
Coupling
Per diode
1.8
Total
1.2
SOT93
0.3
TOP3I
0.6
°C/W
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol
IR *
Test Conditions
Tj = 25°C
Min.
Typ.
VR = VRRM
Tj = 100°C
VF **
Max.
Unit
25
µA
2.5
mA
V
Tj = 125°C
IF = 20 A
0.85
Tj = 125°C
IF = 40 A
1.00
Tj = 25°C
IF = 40 A
1.15
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x IF(AV) + 0.0075 x IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
Test Conditions
Tj = 25°C
Min.
Typ.
Max.
IF = 0.5A
IR = 1A
Irr = 0.25A
35
IF = 1A
VR = 30V
dIF/dt = -50A/µs
50
Unit
ns
tfr
Tj = 25°C
IF = 1A
VFR = 1.1 x VF
tr = 5 ns
10
ns
VFP
Tj = 25°C
IF = 1A
tr = 5 ns
1.5
V
2/6
BYV52/PI
Fig.1 : Average forward power dissipation versus
average forward current.
40
P F(av)(W)
IM(A)
35
=1
=0.5
=0.2
=0.1
30
=0.05
25
20
T
15
10
5
IF(av)(A)
0
0
Fig.2 : Peak current versus form factor.
5
10
15
=tp/T
20
25
tp
30
35
Fig.3 : Forward voltage drop versus forward
current (maximum values).
500
450
400
350
300
250
200
150
100
50
0
0
=tp/T
tp
P=10W
P=30W
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
K
1.8
1.6
IM
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
VFM(V)
T
P=20W
Zth(j-c) (tp. )
K =
Rth(j-c)
Tj= 125 oC
1.4
=0.5
0.5
1.2
=0.2
1.0
= 0 .1
0.8
0.6
T
0.2
0.4
0.2
Single pulse
IFM(A)
0.0
0.1
1
10
100
300
1.0E-03
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
(SOD93)
300
IM(A)
1.0E-02
1.0E-01
tp
1. 0E+00
Fig.6 : Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
250
250
=tp/T
tp(s)
0.1
IM(A)
200
200
150
Tc=25 oC
150
Tc=25 o C
100
100
Tc=50 o C
IM
50
t
Tc=110 oC
t(s)
=0.5
0
0.001
0.01
Tc=50 o C
IM
50
Tc=90 o C
t
t(s)
=0.5
0.1
1
0
0.001
0.01
0.1
1
3/6
BYV52/PI
Fig.7 : Average current
temperature.
(duty cycle : 0.5) (SOD93)
35
versus
ambient
IF(av)(A)
35
Rth(j-a)=Rth(j-c)
30
=0.5
25
T
Rth(j-a)=Rth(j-c)
=0.5
25
=tp/T
15
tp
10
T
=tp/T
tp
10
Rth(j-a)=15 o C/W
Rth(j-a)=15 o C/W
5
5
Tamb( o C)
0
0
20
40
60
80
100
120
140
160
Fig.9 : Junction capacitance versus reverse
voltage applied (Typical values).
F=1Mhz Tj=25 oC
11 0
1 00
1
Tamb( o C)
0
0
20
40
60
80
100
120
140
160
Fig.10 : Recovery charges versus dIF/dt.
QRR(nC)
C(pF)
1 50
1 40
1 30
1 20
VR(V)
10
1 00
2 00
Fig.11 : Peak reverse current versus dIF/dt.
1 00
90 90%CONFIDENCE
80 IF=IF(av)
70
Tj=100 OC
60
50
40
Tj=25 O C
30
20
10
dIF/dt(A/us)
0
1
10
100
Fig.12 : Dynamic parameters versus junction
temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=125o C]
IRM(A)
1.50
90%CONFIDENCE
2.5
ambient
20
15
3.0
versus
IF(av)(A)
30
20
20 0
1 90
1 80
1 70
1 60
Fig.8 : Average current
temperature.
(duty cycle : 0.5) (TOP3I)
IF=IF(av)
1.25
Tj=100 O C
2.0
1.00
1.5
0.75
1.0
0.50
IRM
QRR
Tj=25 O C
0.5
0.0
1
4/6
0.25
dIF/dt(A/us)
20
10
100
0.00
0
Tj( o C)
25
50
75
100
125
150
BYV52/PI
PACKAGE MECHANICAL DATA
SOD93
REF.
A
C
D
D1
E
F
F3
G
H
L
L2
L3
L5
L6
O
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
4.70
4.90 0.185
0.193
1.17
1.37 0.046
0.054
2.50
0.098
1.27
0.050
0.50
0.78 0.020
0.031
1.10
1.30 0.043
0.051
1.75
0.069
10.80
11.10 0.425
0.437
14.70
15.20 0.578
0.598
12.20
0.480
16.20
0.638
18.0
0.709
3.95
4.15 0.156
0.163
31.00
1.220
4.00
4.10 0.157
0.161
Marking : Type number
Cooling method : C
Weight : 3.79 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
5/6
BYV52/PI
PACKAGE MECHANICAL DATA
TOP3I (isolated)
DIMENSIONS
REF.
Millimeters
Inches
A
B
C
D
E
F
G
H
J
K
L
P
R
Min.
Max.
4.4
4.6
1.45
1.55
14.35 15.60
0.5
0.7
2.7
2.9
15.8
16.5
20.4
21.1
15.1
15.5
5.4
5.65
3.4
3.65
4.08
4.17
1.20
1.40
4.60 typ.
Min.
Max.
0.173 0.181
0.057 0.061
0.565 0.614
0.020 0.028
0.106 0.114
0.622 0.650
0.815 0.831
0.594 0.610
0.213 0.222
0.134 0.144
0.161 0.164
0.047 0.055
0.181 typ.
Marking : Type number
Cooling method : C
Weight : 4.46 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
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change without notice. This publication supersedes and replaces all information previously supplied.
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