PHILIPS PZTA06

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
PZTA06
NPN general purpose transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 14
Philips Semiconductors
Product specification
NPN general purpose transistor
PZTA06
PINNING
FEATURES
• High current (max. 500 mA)
PIN
• Low voltage (max. 80 V).
DESCRIPTION
1
base
2, 4
APPLICATIONS
collector
3
emitter
• Medium power switching in e.g. telephony and
professional communication.
4
handbook, halfpage
DESCRIPTION
2, 4
NPN transistor in a SOT223 plastic package.
PNP complement: PZTA56.
1
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
80
V
VCEO
collector-emitter voltage
open base
−
80
V
IC
collector current (DC)
−
500
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
1.2
W
hFE
DC current gain
IC = 100 mA; VCE = 1 V
100
−
fT
transition frequency
IC = 10 mA; VCE = 2 V; f = 100 MHz
100
−
1997 Jul 14
2
MHz
Philips Semiconductors
Product specification
NPN general purpose transistor
PZTA06
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
80
V
VCEO
collector-emitter voltage
open base
−
80
V
VEBO
emitter-base voltage
open collector
−
4
V
IC
collector current (DC)
−
500
mA
ICM
peak collector current
−
800
mA
IBM
peak base current
−
200
mA
−
1.2
W
Tamb ≤ 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other
mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to soldering point
VALUE
UNIT
103
K/W
22
K/W
note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other
mounting conditions, see “Thermal considerations for SOT223 in the General part of handbook SC04”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 80 V
−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
50
nA
hFE
DC current gain
IC = 10 mA; VCE = 1 V
100
−
IC = 100 mA; VCE = 1 V
100
−
−
250
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 10 mA
VBE
base-emitter voltage
IC = 100 mA; VCE = 1 V
−
1.2
V
fT
transition frequency
IC = 10 mA; VCE = 2 V; f = 100 MHz
100
−
MHz
1997 Jul 14
3
mV
Philips Semiconductors
Product specification
NPN general purpose transistor
PZTA06
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
1997 Jul 14
EUROPEAN
PROJECTION
4
Philips Semiconductors
Product specification
NPN general purpose transistor
PZTA06
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 14
5
Philips Semiconductors
Product specification
NPN general purpose transistor
PZTA06
NOTES
1997 Jul 14
6
Philips Semiconductors
Product specification
NPN general purpose transistor
PZTA06
NOTES
1997 Jul 14
7
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Jul 14
Document order number:
9397 750 02137