PHILIPS MPSH10

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
MPSH10
NPN 1 GHz general purpose
switching transistor
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1998 Aug 27
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
FEATURES
PINNING
• Low cost
PIN
• High power gain.
DESCRIPTION
MPSH10
DESCRIPTION
1
collector
2
emitter
3
base
page
1
2
3
MSB033
Silicon NPN general purpose
transistor in a SOT54 (TO-92)
package. PNP complement is the
MPSH81.
Marking code: PSH10.
Fig.1 SOT54.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
30
V
VCEO
collector-emitter voltage
open base
−
25
V
VEBO
emitter-base voltage
open collector
−
3
V
Ts = 25 °C; note 1
−
1
W
−
150
°C
60
−
Ptot
total power dissipation
Tj
junction temperature
hFE
DC current gain
VCE = 10 V; IC = 4 mA
Cre
collector-emitter feedback capacitance VCB = 10 V; IE = 0; f = 1 MHz
−
0.7
pF
Crb
collector-base feedback capacitance
VCB = 10 V; IE = 0; f = 1 MHz
0.35
0.65
pF
fT
transition frequency
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
650
−
MHz
rbCc
collector-base time constant
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
−
9
ps
Note
1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter
−
30
collector-emitter voltage
open base
−
25
V
emitter-base voltage
open collector
−
3
V
−
40
mA
VCBO
collector-base voltage
VCEO
VEBO
IC
collector current (DC)
Ptot
total power dissipation
−
1
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Ts = 25 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.
1998 Aug 27
2
V
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
MPSH10
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point
Rth j-a
thermal resistance from junction to ambient
VALUE
note 1
UNIT
125
K/W
250
K/W
Note
1.
Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 100 µA; IE = 0
30
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 1 mA; IB = 0
25
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 10 µA; IC = 0
3
−
V
VCEsat
collector-emitter saturation voltage
IC = 4 mA; IB = 0.4 mA
−
0.5
V
VBEon
base-emitter ON voltage
VCE = 10 V; IC = 4 mA
−
0.95
V
ICBO
collector-base cut-off current
VCB = 25 V; IE = 0
−
100
nA
IEBO
emitter-base cut-off current
VCB = 25 V; IC = 0
−
100
nA
hFE
DC current gain
VCE = 10 V; IC = 4 mA
60
−
Cre
collector-emitter feedback capacitance
VCB = 10 V; IE = ie = 0; f = 1 MHz
−
0.7
pF
Crb
collector-base feedback capacitance
VCB = 10 V; IC = ic = 0; f = 1 MHz
0.35
0.65
pF
fT
transition frequency
VCE = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
650
−
MHz
rbCc
collector-base time constant
VCB = 10 V; IC = 4 mA;
f = 100 MHz; Tamb = 25 °C
−
9
ps
1998 Aug 27
3
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
MRA154
100
Y11
MPSH10
MRA156
−10
b11
handbook, halfpage
handbook, halfpage
(mS)
(mS)
−20
80
g11
1000 MHz
−30
60
−b11
40
−40
20
−50
700
400
0
102
f (MHz)
−60
103
20
0
40
200 100
60
80
100
g11 (mS)
VCB = 10 V; IC = 4 mA.
Fig.2
VCB = 10 V; IC = 4 mA.
Common base input admittance (Y11) as a
function of frequency.
Fig.3 Common base input admittance (Y11).
MRA155
70
Y21
(mS)
MRA157
60
b21
handbook, halfpage
handbook, halfpage
200
400
(mS)
b21
600
100
50
50
700
30
40
−g21
10
30
−10
20
−30
102
f (MHz)
1000 MHz
10
−70
103
−50
VCB = 10 V; IC = 4 mA.
VCB = 10 V; IC = 4 mA.
Fig.4
Fig.5
Common base forward transfer admittance
(Y21) as a function of frequency.
1998 Aug 27
4
−30
−10
10
30
g21 (mS)
Common base forward transfer admittance
(Y21).
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
MRA150
5
MRA152
0
handbook, halfpage
handbook, halfpage
b12
(mS)
Y12
(mS)
4
−1
3
−2
2
MPSH10
100
200
400
700
−3
−b12
1000 MHz
−4
1
0
102
g12
f (MHz)
−5
−2
103
−1.2
VCB = 10 V; IC = 4 mA.
VCB = 10 V; IC = 4 mA.
Fig.6
Fig.7
Common base reverse transfer admittance
(Y12) as a function of frequency.
MRA151
10
1.2
2
g12 (mS)
MRA153
10
1000 MHz
b22
(mS)
Y22
(mS)
0.4
Common base reverse transfer admittance
(Y12).
handbook, halfpage
handbook, halfpage
−0.4
8
8
700 MHz
6
6
b22
4
4
2
2
400 MHz
200 MHz
g22
0
102
f (MHz)
100 MHz
0
103
0
2
4
6
8
10
g22 (mS)
VCB = 10 V; IC = 4 mA.
VCB = 10 V; IC = 4 mA.
Fig.8
Common base reverse admittance (Y22) as
a function of frequency.
1998 Aug 27
Fig.9 Common base reverse admittance (Y22).
5
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
MPSH10
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1998 Aug 27
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
MPSH10
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 27
7
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
125104/00/04/pp8
Date of release: 1998 Aug 27
Document order number:
9397 750 04297