Vishay DG408L Precision 8-ch/dual 4-ch low voltage analog multiplexer Datasheet

DG408L, DG409L
Vishay Siliconix
Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers
DESCRIPTION
FEATURES
The DG408L, DG409L are low voltage pin-for-pin compatible
companion devices to the industry standard DG408, DG409
with improved performance.
Using BiCMOS wafer fabrication technology allows the
DG408L, DG409L to operate on single and dual supplies.
Single supply voltage ranges from 3 V to 12 V while dual
supply operation is recommended with ± 3 V to ± 6 V.
The DG408L is an 8 channel single-ended analog
multiplexer designed to connect one of eight inputs to a
common output as determined by a 3 bit binary address
(A0, A1, A2). The DG409L is a dual 4 channel differential
analog multiplexer designed to connect one of four
differential inputs to a common dual output as determined by
its 2 bit binary address (A0, A1). Break-before-make
switching action to protect against momentary crosstalk
between adjacent channels.
The DG408L, DG409L provides lower on-resistance, faster
switching time, lower leakage, less power consumption and
higher off-Isolation than the DG408, DG409.
• Halogen-free according to IEC 61249-2-21
Definition
• Pin-for-pin compatibility with DG408, DG409
• 2.7 V to 12 V single supply or ± 3 V to ± 6 V
dual supply operation
• Lower on-resistance: RDS(ON) - 17  typ.
• Fast switching: tON - 38 ns, tOFF - 18 ns
• Break-before-make guaranteed
• Low leakage: IS(off) - 0.2 nA max.
• Low charge injection: 1 pC
• TTL, CMOS, LV logic (3 V) compatible
• 82 dB off-isolation at 1 MHz
• 2000 V ESD protection (HBM)
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
•
•
•
High accuracy
Single and dual power rail capacity
Wide operating voltage range
Simple logic interface
APPLICATIONS
•
•
•
•
•
•
•
Data acquisition systems
Battery operated equipment
Portable test equipment
Sample and hold circuits
Communication systems
SDSL, DSLAM
Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAMS AND PIN CONFIGURATIONS
DG408L
Dual-In- Line, SOIC and TSSOP
A0
EN
VS1
S2
S3
S4
D
16
1
2
Decoders/Drivers
15
3
14
4
13
5
12
6
11
7
10
8
9
DG409L
Dual-In- Line, SOIC and TSSOP
A1
A0
A2
EN
GND
V-
V+
S1a
S5
S2a
S6
S3a
S7
S4a
S8
Da
Top View
16
1
2
Decoders/Drivers
15
3
14
4
13
5
12
6
11
7
10
8
9
A1
GND
V+
S1b
S2b
S3b
S4b
Db
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71342
S11-1066-Rev. G, 30-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
Vishay Siliconix
TRUTH TABLE DG408L
TRUTH TABLE DG409L
A2
A1
A0
EN
On Switch
A1
A0
EN
On Switch
X
X
X
0
None
X
X
0
None
0
0
0
1
1
0
0
1
1
0
0
1
1
2
0
1
1
2
0
1
0
1
3
1
0
1
3
0
1
1
1
4
1
1
1
4
1
0
0
1
5
1
0
1
1
6
1
1
0
1
7
1
1
1
1
8
Logic "0" = VAL  0.8 V
Logic "1" = VAH  2.4 V
X = Do not Care
For low and high voltage levels for VAX and VEN consult “Digital Control” parameters for specific V+ operation.
ORDERING INFORMATION DG408L
Temp. Range
Package
Part Number
16-pin SOIC
DG408LDY
DG408LDY-E3
DG408LDY-T1
DG408LDY-T1-E3
16-pin TSSOP
DG408LDQ
DG408LDQ-E3
DG408LDQ-T1
DG408LDQ-T1-E3
- 40 °C to 85 °C
ORDERING INFORMATION DG409L
Temp. Range
Package
Part Number
16-pin SOIC
DG409LDY
DG409LDY-E3
DG409LDY-T1
DG409LDY-T1-E3
16-pin TSSOP
DG409LDQ
DG409LDQ-E3
DG409LDQ-T1
DG409LDQ-T1-E3
- 40 °C to 85 °C
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Voltage referenced V+ to VGND
7
Digital inputsa, VS, VD
30
Peak current, S or D (pulsed at 1 ms, 10 % duty cycle max.)
100
Power Dissipation (Package)b
V
(V-) - 0.3 to (V) + 0.3
Current (any terminal)
Storage Temperature
Unit
14
mA
(A suffix)
- 65 to 150
(D suffix)
- 65 to 125
16-pin plastic TSSOPc
650
16-pin narrow SOICc
600
16-pin CerDIPd
900
LCC-20e
750
°C
mW
Notes:
a. Signals on SX, DX, AX, or EN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 7.6 mW/°C above 75 °C.
d. Derate 12 mW/°C above 75 °C.
e. Derate 10 mW/°C above 75 °C.
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Document Number: 71342
S11-1066-Rev. G, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
Vishay Siliconix
SPECIFICATIONS (Single Supply 12 V)
Test Conditions
Unless Otherwise Specified
V+ = 12 V, ± 10 %, V- = 0 V
Parameter
Symbol
VEN = 0.8 V or 2.4 Vf
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.b Typ.d
Min.c
Max.c
Min.c
12
0
Max.c
Unit
12
V
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
RDS(on)
RDS(on) Matching
RDS
Between Channelsg
On-Resistance Flatnessi
RFLAT(on)
IS(off)
Switch Off Leakage
Current
ID(off)
Channel On Leakage
Current
ID(on)
Full
0
VD = 10.8 V, VD = 2 V or 9 V, IS = 10 mA
sequence each switch on
Room
Full
17
29
38
29
35
VD = 10.8 V, VD = 2 V or 9 V
IS = 10 mA
Room
1
3
3
Room
3
VEN = 0 V, VD = 11 V or 1 V
VS = 1 V or 11 V
VS = VD = 1 V or 11 V
7

7
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
2.4
nA
Digital Control
Logic High Input Voltage
VINH
Full
Logic Low Input Voltage
VINL
Full
2.4
0.8
0.8
IIN
VAX = VEN = 2.4 V or 0.8 V
Full
Transition Time
tTRANS
VS1 = 8 V, VS8 = 0 V, (DG408L)
VS1b = 8 V, VS4b = 0 V, (DG409L)
see figure 2
Room
Full
30
Break-Before-Make Time
tOPEN
VS(all) = VDA = 5 V
see figure 4
Room
Full
11
Room
Full
38
55
60
55
60
Room
Full
18
25
35
25
30
Room
1
5
5
Room
- 70
Room
- 82
Input Current
- 1.5
1.5
-1
1
V
µA
Dynamic Characteristics
Enable Turn-On Time
tON(EN)
Enable Turn-Off Time
tOFF(EN)
VAX = 0 V, VS1 = 5 V (DG408L)
VAX = 0 V, VS1b = 5 V (DG409L)
see figure 3
Q
CL = 1 nF, VGEN = 0 V, RGEN = 0 
Charge Injectione
Off Isolation
e, h
OIRR
e
XTALK
Crosstalk
Source Off Capacitancee
Drain Off Capacitance
e
Drain On Capacitancee
f = 100 kHz, RL = 1 k
60
68
1
60
65
1
ns
CS(off)
f = 1 MHz, VS = 0 V, VEN = 0 V
Room
7
CD(off)
f = 1 MHz, VD = 2.4 V, VEN = 0 V
Room
20
CD(on)
f = 1 MHz, VD = 0 V, VEN = 2.4 V
(DG409L only)
Room
31
VEN = VA = 0 V or 5 V
Room
0.2
pC
dB
pF
Power Supplies
Power Supply Range
V+
Power Supply Current
I+
3
12
0.7
3
12
V
0.7
mA
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDS(on) = RDS(on) Max - RDS(on) Min.
h. Worst case isolation occurs on Channel 4 do to proximity to the drain pin.
i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.
Document Number: 71342
S11-1066-Rev. G, 30-May-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
Vishay Siliconix
SPECIFICATIONS (Dual Supply V+ = 5 V, V - = - 5 V)
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %, V- = - 5 V
Parameter
Symbol
VEN = 0.6 V or 2.4 Vf
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.b Typ.d
Min.c
Max.c
Min.c
5
-5
Max.c
Unit
5
V
40
50

Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
RDS(on)
IS(off)
Switch Off Leakage
Currenta
ID(off)
Channel On Leakage
ID(on)
Currenta
Full
VD = ± 3.5 V, IS = 10 mA
sequence each switch on
V+ = 5.5 , V- = 5.5 V
VEN = 0 V, VD = ± 4.5 V, VS = ± 4.5 V
V+ = 5.5 V, V- = - 5.5 V
VEN = 2.4 V, VD = ± 4.5 V, VS = ± 4.5 V
Room
Full
-5
20
40
50
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
2.4
nA
Digital Control
Logic High Input Voltage
VINH
Full
Logic Low Input Voltage
VINL
Full
Input Currenta
2.4
0.6
0.6
IIN
VAX = VEN = 2.4 V or 0.6 V
Full
tTRANS
VS1 = 3.5 V, VS8 = - 3.5 V, (DG408L)
VS1b = 3.5 V, VS4b = - 3.5 V, (DG409L)
see figure 2
Room
Full
30
tOPEN
VS(all) = VDA = 3.5 V
see figure 4
Room
Full
8
Room
Full
25
55
68
55
60
Room
Full
20
40
50
40
45
- 1.5
1.5
-1
1
V
µA
Dynamic Characteristics
e
Transition Time
Break-Before-Make
Timee
1
60
65
1
ns
Enable Turn-On Timee
tON(EN)
Enable Turn-Off Timee
tOFF(EN)
VAX = 0 V, VS1 = 3.5 V (DG408L)
VAX = 0 V, VS1b = 3.5 V (DG409L)
see figure 3
Source Off Capacitancee
CS(off)
f = 1 MHz, VS = 0 V, VEN = 0 V
Room
6
Drain Off Capacitancee
CD(off)
f = 1 MHz, VD = 0 V, VEN = 0 V
Room
15
e
CD(on)
f = 1 MHz, VD = 0 V, VEN = 2.4 V
Room
29
Drain On Capacitance
60
78
pF
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDS(on) = RDS(on) max. - RDS(on) min.
h. Worst case isolation occurs on channel 4 do to proximity to the drain pin.
i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined analog signal.
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Document Number: 71342
S11-1066-Rev. G, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
Vishay Siliconix
SPECIFICATIONS (Single Supply 5 V)
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %, V- = 0 V
Parameter
Symbol
VEN = 0.6 V or 2.4 Vf
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.b Typ.d
Min.c
Max.c
Min.c
5
0
Max.c
Unit
5
V
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
RDS(on)
RDS(on) Matching Between
Channelsg
On-Resistance Flatnessi
RDS
RFLAT(on)
IS(off)
Switch Off Leakage
Currenta
ID(off)
Channel On Leakage
ID(on)
Currenta
Full
0
V+ = 4.5 V, VD or VS = 1 V or 3.5 V,
ID = 5 mA
Room
Full
35
49
62
40
62
V+ = 4.5 V, VD = 1 V or 3.5 V,
IS = 5 mA
Room
1.5
3
3
V+ = 5.5 V, VS = 1 V or 4 V
VD = 4 V or 1 V
V+ = 5.5 V, VD = VS = 1 V or 4 V
sequence each switch on
Room
4

4
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Full
2.4
nA
Digital Control
Logic High Input Voltage
VINH
Logic Low Input Voltage
VINL
Input Currenta
V+ = 5 V
Full
2.4
0.6
0.6
IIN
VAX = VEN = 2.4 V or 0.6 V
Full
Transition Timee
tTRANS
VS1 = 3.5 V, VS8 = 0 V, (DG408L)
VS1b = 3.5 V, VS4b = 0 V, (DG409L)
see figure 2
Room
Full
44
Break-Before-Make Timee
tOPEN
VS(all) = VDA = 3.5 V,
see figure 4
Room
Full
17
Room
Full
43
60
70
60
65
Room
Full
26
45
60
45
50
Room
1
5
5
Room
- 70
Room
- 80
- 1.5
1.5
-1
1
V
µA
Dynamic Characteristics
Enable Turn-On Timee
tON(EN)
Enable Turn-Off Timee
tOFF(EN)
VAX = 0 V, VS1 = 3.5 V (DG408L)
VAX = 0 V, VS1b = 3.5 V (DG409L)
see figure 3
Q
CL = 1 nF, RGEN = 0 , VGEN = 0 
Charge Injectione
Off Isolation
e, h
OIRR
e
XTALK
Crosstalk
Source Off Capacitancee
Drain Off Capacitance
Drain On
e
Capacitancee
f = 100 kHz, RL = 1 k
125
138
1
125
135
1
ns
CS(off)
f = 1 MHz, VS = 0 V, VEN = 0 V
Room
8
CD(off)
f = 1 MHz, VD = 0 V, VEN = 0 V
Room
21
CD(on)
f = 1 MHz, VD = 0 V, VEN = 2.4 V
(DG409L only)
Room
32
pC
dB
pF
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDS(on) = RDS(on) max. - RDS(on) min.
h. Worst case isolation occurs on channel 4 do to proximity to the drain pin.
i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined analog signal.
Document Number: 71342
S11-1066-Rev. G, 30-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
Vishay Siliconix
SPECIFICATIONS (Single Supply 3 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %, V- = 0 V
VEN = 0.4 V or 2 Vf
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.b
V+ = 2.7 V, VD = 0.5 or 2.2 V,
IS = 5 mA
Room
Full
Typ.d
Min.c
Max.c
Min.c
3
0
Max.c
Unit
3
V
80
100

Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Switch Off Leakage
Currenta
Channel On Leakage
Currenta
VANALOG
RDS(on)
Full
IS(off)
V+ = 3.3 V, VS = 2 or 1 V, VD = 1 or 2 V
ID(off)
ID(on)
V+ = 3.3 V, VD = VS = 1 or 2 V
sequence each switch on
0
60
80
105
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
Room
Full
-1
- 15
1
15
-1
- 10
1
10
2
nA
Digital Control
Logic High Input Voltage
VINH
Full
Logic Low Input Voltage
VINL
Full
Input Currenta
2
0.4
0.4
IIN
VAX = VEN = 2.4 V or 0.4 V
Full
Transition Time
tTRANS
VS1 = 1.5 V, VS8 = 0 V, (DG408L)
VS1b = 1.5 V, VS4b = 0 V, (DG409L)
see figure 2
Room
Full
75
Break-Before-Make Time
tOPEN
VS(all) = VDA = 1.5 V,
see figure 4
Room
Full
32
Enable Turn-On Time
tON(EN)
70
95
115
95
105
Enable Turn-Off Time
tOFF(EN)
VAX = 0 V, VS1 = 1.5 V (DG408L)
VAX = 0 V, VS1b = 1.5 V (DG409L)
see figure 3
Room
Full
Room
Full
55
100
115
100
105
Q
CL = 1 nF, RGEN = 0 , VGEN = 0 V
5
5
- 1.5
1.5
-1
1
V
µA
Dynamic Characteristics
Charge Injectione
Off Isolatione, h
OIRR
Crosstalke
XTALK
Source Off Capacitancee
Drain Off
Capacitancee
Drain On Capacitancee
RL = 1 k, f = 100 kHz
150
175
1
150
175
1
ns
Room
0.4
Room
- 70
Room
- 79
CS(off)
f = 1 MHz, VS = 0 V, VEN = 0 V
Room
8
CD(off)
f = 1 MHz, VD = 0 V, VEN = 0 V
Room
19
CD(on)
f = 1 MHz, VD = 0 V, VEN = 2 V
(DG409L only)
Room
33
pC
dB
pF
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDS(on) = RDS(on) max. - RDS(on) min.
h. Worst case isolation occurs on channel 4 do to proximity to the drain pin.
i. RDS(on) flatness is measured as the difference between the minimum and maximum measured values across a defined analog signal.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71342
S11-1066-Rev. G, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
R DS(on) - Drain-Source On-Resistance ()
R DS(on) - Drain-Source On-Resistance ()
80
70
60
V+ = 2.7 V
50
40
V+ = 4.5 V
30
V+ = 12 V
20
10
20
V+ = 5 V
V- = - 5 V
15
10
5
0
0
0
2
4
6
8
10
12
-5
-3
-1
RDS(on) vs. VD and Power Supply
5
R DS(on) - Drain-Source On-Resistance ()
50
Upper Threshold Limit
1.6
1.4
1.2
VT (V)
3
RDS(on) vs. VD and Power Supply
1.8
Low Threshold Limit
1.0
0.8
0.6
0.4
0.2
0.0
85°C
125°C
40
25°C
30
- 55 °C
20
10
0
0
2
4
6
8
10
12
14
0
1
2
V+ - Positive Supply Voltage (V)
70
30
60
Switching Speed (nS)
85°C
125°C
20
25°C
15
- 55 °C
10
4
5
6
RDS(on) vs. VD and Temperature
35
25
3
VD - Drain Voltage (V)
Input Threshold vs. V+ Supply Voltage
R DS(on) - Drain-Source On-Resistance ()
1
VD - Drain Voltage (V)
VD - Drain Voltage (V)
50
40
tTRANS
30
tON
20
tOFF
5
10
0
0
-6
-4
-2
0
2
4
VD - Drain Voltage (V)
RDS(on) vs. VD and Temperature
Document Number: 71342
S11-1066-Rev. G, 30-May-11
6
0
2
4
6
8
10
12
14
V+ - Positive Supply Voltage (V)
Switching Time vs. Positive Supply Voltage
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
35
IS(off)
30
Switching Speed (nS)
Leakage Current (pA)
0
- 10
ID(off)
ID(on)
- 20
tON
25
tTRANS
20
tOFF
15
10
- 30
5
0
- 40
-5
-3
-1
1
3
3
5
4
5
± - Dual Power Supply Voltage (V)
VD, V S - Analog Voltage (V)
Leakage Current vs. Analog Voltage
6
Switching Time vs. Dual Power Supply Voltage
1.0
10
CL = 1000 pF
- 10
V+ = 12 V
V- = 0 V
0.6
0.4
V+ = 5 V
V- = - 5 V
V+ = 3 V
V- = 0 V
RL = 50 
- 30
Loss (dB)
Q - Charge Injection (pC)
0.8
- 50
Off Isolation
- 70
V+ = 5 V
V- = 0 V
Insertion Loss
- 3 dB = 280 MHz
Crosstalk
0.2
- 90
0.0
-5
0
5
VS - Source Voltage (V)
- 110
0.1
10
Charge Injection vs. Analog Voltage
100
1000
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency (Single Supply)
35
35
CD, CS - Drain/Source Capacitance (pF)
CD, CS - Drain/Source Capacitance (pF)
10
Frequency (MHz)
1
CD(on)
30
V+ = 12 V
V- = 0 V
25
20
CD(off)
15
10
CS(off)
5
0
0
2
4
6
8
10
12
Drain/Source Capacitance vs. Analog Voltage
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CD(on)
30
V+ = 5 V
V- = - 5 V
25
20
CD(off)
15
10
CS(off)
5
0
-5
-4
-3
-2
-1
0
1
2
3
4
5
Drain/Source Capacitance vs. Analog Voltage
Document Number: 71342
S11-1066-Rev. G, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
Vishay Siliconix
SCHEMATIC DIAGRAM (Typical Channel)
V+
GND
D
A0
V+
VLevel
Shift
AX
Decode/
Drive
S1
V+
EN
Sn
V-
Figure 1.
TEST CIRCUITS
V+
V+
A2
S1
A1
50 
3V
VS1
S2 - S7
A0
DG408L
EN
S8
VS8
VO
D
GND
V35 pF
300 
Logic
Input
VAX
tr < 20 ns
tf < 20 ns
3V
50 %
0V
VVS1
VO
A1
A0
50 
90 %
VS8
S1a - S4a, Da
V+
S4b
tTRANS
VSB4
VO
Db
EN
GND
50 %
VS1
S1b
DG409L
3V
90 %
Switch
Output
V+
V300 
35 pF
S1 ON
tTRANS
S8 ON (DG408L)
or
S4 ON (DG409L)
V-
Figure 2. Transition Time
Document Number: 71342
S11-1066-Rev. G, 30-May-11
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9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
Vishay Siliconix
TEST CIRCUITS
V+
V+
VS1
S1
EN
S2 - S8
A0
DG408L
A1
A2
GND
VO
D
V-
50 
50 %
0V
35 pF
300 
tr < 20 ns
tf < 20 ns
3V
Logic
Input
tON(EN)
V-
tOFF(EN)
0V
10 %
V+
Switch
Output
VO
V+
90 %
VS1
S1b
VO
EN
S1a - S4a, Da
S2b - S4b
A0
DG409L
A1
Db
GND
VO
V-
50 
35 pF
300 
V-
Figure 3. Enable Switching Time
bbm.5
3V
EN
V+
4/9
VS1
All S and Da
A0
tr < 20 ns
tf < 20 ns
3V
50 %
0V
DG408L
DG409L
A1
A2
Db, D
GND
50 
Logic
Input
VO
VS
V-
V-
300 
80 %
Switch
Output
35 pF
VO
0V
tOPEN
Figure 4. Break-Before-Make Interval
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Document Number: 71342
S11-1066-Rev. G, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG408L, DG409L
Vishay Siliconix
TEST CIRCUITS
V+
Rg
V+
SX
Vg
OFF
ON
OFF
0V
A0
Channel
Select
3V
Logic
Input
EN
VO
D
A1
CL
1 nF
A2
GND
V-
VO
Switch
Output
VO is the measured voltage due to charge transfer
error Q, when the channel turns off.
V-
Q = CL x VO
Figure 5. Charge Injection
V+
V+
VIN
VS
VIN
V+
SX
SX
VS
Rg = 50 
S8
A0
D
A2
GND
RL
1 k
V-
EN
S8
VO
A1
V+
S1
A0
Rg = 50 
D
VO
A1
A2
GND
EN
RL
1 k
V-
VVOUT
Off Isolation = 20 log
VCrosstalk = 20 log
VIN
VOUT
VIN
Figure 6. Off Isolation
Figure 7. Crosstalk
V+
V+
VS
V+
S1
V+
Rg = 50 
A0
D
A2
GND
EN
V-
Channel
Select
RL
1 k
Meter
A2
VO
A1
S1
HP4192A
Impedance
Analyzer
or Equivalent
S8
A1
A0
D
GND
VInsertion Loss = 20 log
f = 1 MHz
V-
VOUT
VIN
Figure 8. Insertion Loss
EN
V-
Figure 9. Source Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71342.
Document Number: 71342
S11-1066-Rev. G, 30-May-11
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11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
A
-
1.10
1.20
A1
0.05
0.10
0.15
A2
-
1.00
1.05
0.38
B
0.22
0.28
C
-
0.127
-
D
4.90
5.00
5.10
E
6.10
6.40
6.70
E1
4.30
4.40
4.50
e
-
0.65
-
L
0.50
0.60
0.70
L1
0.90
1.00
1.10
y
-
-
0.10
θ1
0°
3°
6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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Document Number: 91000
Revision: 11-Mar-11
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