DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Oct 11 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification. DESCRIPTION handbook, halfpage1 PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. 3 2 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC556 SC-43A DESCRIPTION VERSION plastic single-ended leaded (through hole) package; 3 leads SOT54 BC557 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC556 − −80 V BC557 − −50 V BC556 − −65 V BC557 − −45 V − −5 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C 2004 Oct 11 open collector Tamb ≤ 25 °C 2 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 250 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = −30 V; IE = 0 A − −1 −15 nA VCB = −30 V; IE = 0 A; Tj = 150 °C − − −4 μA nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 V − − −100 hFE DC current gain IC = −2 mA; VCE = −5 V; see Figs 2, 3 and 4 125 − 475 BC557 125 − 800 BC556A 125 − 250 BC556B; BC557B 220 − 475 BC557C 420 − 800 BC556 VCEsat VBEsat VBE collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −60 −300 mV IC = −100 mA; IB = −5 mA − −180 −650 mV base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1 − −750 − mV IC = −100 mA; IB = −5 mA; note 1 − −930 − mV VCE = −5 V; IC = −2 mA; note 2 −600 −650 −750 mV VCE = −5 V; IC = −10 mA; note 2 − − −820 mV base-emitter voltage Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz − 3 − pF Ce emitter capacitance VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz − 10 − pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 − − MHz F noise figure VCE = −5 V; IC = −200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 2 10 dB Notes 1. VBEsat decreases by about −1.7 mV/K with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. 2004 Oct 11 3 − NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 MBH726 300 handbook, full pagewidth hFE 200 VCE = −5 V 100 0 −10−1 −1 −10 −102 IC (mA) −103 BC556A. Fig.2 DC current gain; typical values. MBH727 400 handbook, full pagewidth hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 BC556B; BC557B. Fig.3 DC current gain; typical values. 2004 Oct 11 4 −102 IC (mA) −103 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 MBH728 600 handbook, full pagewidth hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 BC557C. Fig.4 DC current gain; typical values. 2004 Oct 11 5 −102 IC (mA) −103 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Oct 11 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 6 EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Oct 11 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp8 Date of release: 2004 Oct 11 Document order number: 9397 750 13571