SEMTECH BC517 Npn silicon darlington transistor Datasheet

BC517
NPN Silicon Darlington Transistor
Collector
Base
Emitter
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCES
30
V
Emitter Base Voltage
VEBO
10
V
IC
500
mA
Ptot
625
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
Collector Current
Total Power Dissipation
C
C
Characteristics (Ta = 25 OC)
Parameter
DC Current Gain
at VCE = 2 V, IC = 20 mA
Collector Saturation Voltage
at IC = 100 mA, IB = 0.1 mA
Base Emitter On Voltage
at VCE = 5 V, IC = 10 mA
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Cutoff Current
at VCE = 30 V
Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current
at VEB = 10 V
Current-Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
Symbol
Min.
Typ.
Max.
Unit
hFE
30,000
-
-
-
VCEsat
-
-
1
V
VBE(on)
-
-
1.4
V
V(BR)CBO
40
-
-
V
V(BR)CES
30
-
-
V
V(BR)EBO
10
-
-
V
ICES
-
-
500
nA
ICBO
-
-
100
nA
IEBO
-
-
100
nA
fT
-
200
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :15/06/2006
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