GSI GS816018T-200 1m x 18, 512k x 32, 512k x 36 18mb sync burst sram Datasheet

Preliminary
GS816018/32/36T-250/225/200/166/150/133
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
Pipeline
3-1-1-1
3.3 V
2.5 V
Flow
Through
2-1-1-1
3.3 V
2.5 V
tKQ
tCycle
Curr (x18)
Curr (x32/x36)
Curr (x18)
Curr (x32/x36)
-250 -225 -200 -166 -150 -133 Unit
2.5 2.7 3.0 3.4 3.8 4.0 ns
4.0 4.4 5.0 6.0 6.7 7.5 ns
280
330
275
320
255
300
250
295
230
270
230
265
200
230
195
225
185
215
180
210
165
190
165
185
mA
mA
mA
mA
tKQ
tCycle
5.5
5.5
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.5
8.5
ns
ns
Curr (x18)
Curr (x32/x36)
Curr (x18)
Curr (x32/x36)
175
200
175
200
165
190
165
190
160
180
160
180
150
170
150
170
145
165
145
165
135
150
135
150
mA
mA
mA
mA
Functional Description
250 MHz–133 MHz
2.5 V or 3.3 V VDD
2.5 V or 3.3 V I/O
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the risingedge-triggered Data Output Register.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS816018/32/36T operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (VDDQ) pins are used to decouple output noise
from the internal circuits and are 3.3 V and 2.5 V compatible.
Applications
The GS816018/32/36T is an 18,874,368-bit (16,777,216-bit
for x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
Rev: 2.12 3/2002
1/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
A6
A7
E1
E2
NC
NC
BB
BA
E3
VDD
VSS
CK
GW
BW
G
ADSC
ADSP
ADV
A8
A9
GS816018 100-Pin TQFP Pinout
VDDQ
LBO
A5
A4
VSS
NC
NC
DQB1
DQB2
VSS
VDDQ
DQB3
DQB4
FT
VDD
NC
VSS
DQB5
DQB6
VDDQ
VSS
DQB7
DQB8
DQB9
NC
VSS
VDDQ
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
1M
x
18
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Rev: 2.12 3/2002
A19
NC
NC
VDDQ
VSS
NC
DQA9
DQA8
DQA7
VSS
VDDQ
DQA6
DQA5
VSS
NC
VDD
ZZ
DQA4
DQA3
VDDQ
VSS
DQA2
DQA1
NC
NC
VSS
VDDQ
NC
NC
NC
A3
A2
A1
A0
NC
NC
VSS
VDD
A18
A17
A10
A11
A12
A13
A14
A15
A16
NC
NC
NC
2/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
A6
A7
E1
E2
BD
BC
BB
BA
E3
VDD
VSS
CK
GW
BW
G
ADSC
ADSP
ADV
A8
A9
GS816032 100-Pin TQFP Pinout
VSS
DQC6
DQC5
DQC4
DQC3
VSS
VDDQ
DQC2
DQC1
LBO
A5
A4
FT
VDD
NC
VSS
DQD1
DQD2
VDDQ
VSS
DQD3
DQD4
DQD5
DQD6
VSS
VDDQ
DQD7
DQD8
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
512K
x
32
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Rev: 2.12 3/2002
NC
DQB8
DQB7
VDDQ
VSS
DQB6
DQB5
DQB4
DQB3
VSS
VDDQ
DQB2
DQB1
VSS
NC
VDD
ZZ
DQA1
DQA2
VDDQ
VSS
DQA3
DQA4
DQA5
DQA6
VSS
VDDQ
DQA7
DQA8
NC
A3
A2
A1
A0
NC
NC
VSS
VDD
A18
A17
A10
A11
A12
A13
A14
A15
A16
NC
DQC8
DQC7
VDDQ
3/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
A6
A7
E1
E2
BD
BC
BB
BA
E3
VDD
VSS
CK
GW
BW
G
ADSC
ADSP
ADV
A8
A9
GS816036 100-Pin TQFP Pinout
VSS
DQC6
DQC5
DQC4
DQC3
VSS
VDDQ
DQC2
DQC1
LBO
A5
A4
FT
VDD
NC
VSS
DQD1
DQD2
VDDQ
VSS
DQD3
DQD4
DQD5
DQD6
VSS
VDDQ
DQD7
DQD8
DQD9
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
512K
x
36
10
71
Top View
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Rev: 2.12 3/2002
DQB9
DQB8
DQB7
VDDQ
VSS
DQB6
DQB5
DQB4
DQB3
VSS
VDDQ
DQB2
DQB1
VSS
NC
VDD
ZZ
DQA1
DQA2
VDDQ
VSS
DQA3
DQA4
DQA5
DQA6
VSS
VDDQ
DQA7
DQA8
DQA9
A3
A2
A1
A0
NC
NC
VSS
VDD
A18
A17
A10
A11
A12
A13
A14
A15
A16
DQC9
DQC8
DQC7
VDDQ
4/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
TQFP Pin Description
Pin Location
Symbol
Type
Description
37, 36
A0, A1
I
Address field LSBs and Address Counter preset Inputs
35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46,
47, 48, 49, 50, 43, 42
A2–A18
I
Address Inputs
80
A19
I
Address Inputs (x18 versions)
63, 62, 59, 58, 57, 56, 53, 52
68, 69, 72, 73, 74, 75, 78, 79
13, 12, 9, 8, 7, 6, 3, 2
18, 19, 22, 23, 24, 25, 28, 29
DQA1–DQA8
DQB1–DQB8
DQC1–DQC8
DQD1–DQD8
I/O
Data Input and Output pins (x32, x36 Version)
51, 80, 1, 30
DQA9, DQB9,
DQC9, DQD9
I/O
Data Input and Output pins (x36 Version)
51, 80, 1, 30
NC
58, 59, 62, 63, 68, 69, 72, 73, 74
8, 9, 12, 13, 18, 19, 22, 23, 24
DQA1–DQA9
DQB1–DQB9
I/O
Data Input and Output pins (x18 Version)
51, 52, 53, 56, 57
75, 78, 79, 95, 96,
1, 2, 3, 6, 7,
25, 28, 29, 30
NC
—
No Connect (x18 Version)
87
BW
I
Byte Write—Writes all enabled bytes; active low
93, 94
BA, BB
I
Byte Write Enable for DQA, DQB Data I/Os; active low
95, 96
BC, BD
I
Byte Write Enable for DQC, DQD Data I/Os; active low
(x32, x36 Version)
89
CK
I
Clock Input Signal; active high
88
GW
I
Global Write Enable—Writes all bytes; active low
98, 92
E1, E3
I
Chip Enable; active low
97
E2
I
Chip Enable; active high
86
G
I
Output Enable; active low
83
ADV
I
Burst address counter advance enable; active low
84, 85
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller); active low
64
ZZ
I
Sleep Mode control; active high
14
FT
I
Flow Through or Pipeline mode; active low
31
LBO
I
Linear Burst Order mode; active low
15, 41, 65, 91
VDD
I
Core power supply
5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90
VSS
I
I/O and Core Ground
4, 11, 20, 27, 54, 61, 70, 77
VDDQ
I
Output driver power supply
16, 38, 39, 66
NC
—
No Connect
Rev: 2.12 3/2002
No Connect (x32 Version)
5/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
GS816018/32/36 Block Diagram
Register
A0–An
D
Q
A0
A0
D0
Q0
A1
A1
D1
Q1
Counter
Load
A
LBO
ADV
Memory
Array
CK
ADSC
ADSP
Q
D
Register
GW
BW
BA
D
Q
Register
D
36
Q
BB
36
4
Register
D
Q
D
Q
Q
D
D
Register
Register
Q
Register
BC
BD
Register
D
Q
Register
E1
E2
E3
D
Q
Register
D
Q
FT
G
ZZ
1
Power Down
DQx1–DQx9
Control
Note: Only x36 version shown for simplicity.
Rev: 2.12 3/2002
6/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Mode Pin Functions
Mode Name
Pin
Name
Burst Order Control
LBO
Output Register Control
FT
Power Down Control
ZZ
State
Function
L
Linear Burst
H
Interleaved Burst
L
Flow Through
H or NC
Pipeline
L or NC
Active
H
Standby, IDD = ISB
Note:
There pull-up device on the and FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will operate
in the default states as specified in the above tables.
Burst Counter Sequences
Interleaved Burst Sequence
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
1st address
00
01
10
11
2nd address
01
10
11
00
2nd address
01
00
11
10
3rd address
10
11
00
01
3rd address
10
11
00
01
4th address
11
00
01
10
4th address
11
10
01
00
Note: The burst counter wraps to initial state on the 5th clock.
Note: The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Rev: 2.12 3/2002
7/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Byte Write Truth Table
Function
GW
BW
BA
BB
BC
BD
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x32 and x36 versions.
Rev: 2.12 3/2002
8/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key5
E1
E2
Deselect Cycle, Power Down
None
X
H
X
X
Deselect Cycle, Power Down
None
X
L
F
Deselect Cycle, Power Down
None
X
L
Read Cycle, Begin Burst
External
R
Read Cycle, Begin Burst
External
Write Cycle, Begin Burst
ADV
W3
DQ4
L
X
X
High-Z
L
X
X
X
High-Z
F
H
L
X
X
High-Z
L
T
L
X
X
X
Q
R
L
T
H
L
X
F
Q
External
W
L
T
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
X
H
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
X
H
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
X
H
H
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
X
H
H
F
Q
Write Cycle, Suspend Burst
Current
X
X
H
H
H
T
D
Write Cycle, Suspend Burst
Current
H
X
X
H
H
T
D
ADSP ADSC
Notes:
1. X = Don’t Care, H = High, L = Low
2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1
3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
Rev: 2.12 3/2002
9/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Simplified State Diagram
X
Deselect
W
R
Simple Burst Synchronous Operation
Simple Synchronous Operation
W
X
R
R
First Write
CW
First Read
CR
CR
W
X
R
R
X
Burst Write
Burst Read
X
CR
CW
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (BA, BB, BC, BD, BW, and GW)
control inputs, and that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
Rev: 2.12 3/2002
10/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Simplified State Diagram with G
X
Deselect
W
R
W
X
R
R
First Write
CR
CW
W
CW
W
X
First Read
X
CR
R
Burst Write
R
CR
CW
W
Burst Read
X
CW
CR
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
Rev: 2.12 3/2002
11/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 4.6
V
VDDQ
Voltage in VDDQ Pins
–0.5 to 4.6
V
VCK
Voltage on Clock Input Pin
–0.5 to 6
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
o
C
TBIAS
Temperature Under Bias
–55 to 125
o
C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.
Rev: 2.12 3/2002
12/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
3.3 V Supply Voltage
VDD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
3.3 V VDDQ I/O Supply Voltage
VDDQ3
3.0
3.3
3.6
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
2.7
V
Notes
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
2.0
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.8
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.3*VDD
V
1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.3*VDD
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Rev: 2.12 3/2002
13/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C
2
Note:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Undershoot Measurement and Timing
Overshoot Measurement and Timing
VIH
20% tKC
VDD + 2.0 V
VSS
50%
50%
VDD
VSS – 2.0 V
20% tKC
VIL
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
4
5
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
6
7
pF
Note: These parameters are sample tested.
Package Thermal Characteristics
Rating
Layer Board
Symbol
Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
°C/W
1,2
Junction to Ambient (at 200 lfm)
four
RΘJA
24
°C/W
1,2
RΘJC
Junction to Case (TOP)
—
9
°C/W
3
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temperature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Rev: 2.12 3/2002
14/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
AC Test Conditions
Parameter
Conditions
VDD – 0.2 V
Input high level
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig.
1 unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
Output Load 1
DQ
30pF*
50Ω
VDDQ/2
* Distributed Test Jig Capacitance
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–1 uA
1 uA
ZZ Input Current
IIN1
VDD ≥ VIN ≥ VIH
0 V ≤ VIN ≤ VIH
–1 uA
–1 uA
1 uA
100 uA
FT Input Current
IIN2
VDD ≥ VIN ≥ VIL
0 V ≤ VIN ≤ VIL
–100 uA
–1 uA
1 uA
1 uA
Output Leakage Current
IOL
Output Disable, VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH2
IOH = –8 mA, VDDQ = 2.375 V
1.7 V
—
Output High Voltage
VOH3
IOH = –8 mA, VDDQ = 3.135 V
2.4 V
—
Output Low Voltage
VOL
IOL = 8 mA
—
0.4 V
Rev: 2.12 3/2002
15/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
16/28
—
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
Deselect
Current
165
10
IDD
IDD
60
85
IDD
Pipeline
Flow
Through
20
ISB
20
ISB
Pipeline
Flow
Through
165
10
260
15
180
20
IDDQ
IDD
IDDQ
IDD
IDDQ
IDD
IDDQ
IDD
Flow
Through
Pipeline
Flow
Through
Pipeline
290
30
260
20
IDD
IDDQ
Pipeline
IDDQ
180
20
IDD
IDDQ
Flow
Through
Flow
Through
290
40
0
to
70°C
IDD
IDDQ
Symbol
Pipeline
Mode
65
90
30
30
175
10
270
15
190
20
300
30
175
10
270
20
190
20
300
40
–40
to
85°C
-250
60
80
20
20
155
10
235
15
170
20
265
30
155
10
235
20
170
20
265
35
65
85
30
30
165
10
245
15
180
20
275
30
165
10
245
20
180
20
275
35
–40
to
85°C
-225
0
to
70°C
Notes:
1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
—
ZZ ≥ VDD – 0.2 V
(x18)
(x32/
x36)
(x18)
(x32/
x36)
Standby
Current
2.5 V
Operating
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
Operating
Current
3.3 V
Test Conditions
Parameter
Operating Currents
50
75
20
20
150
10
215
15
165
15
240
25
150
10
215
15
165
15
240
30
0
to
70°C
55
80
30
30
160
10
225
15
175
15
250
25
160
10
225
15
175
15
250
30
–40
to
85°C
-200
50
64
20
20
140
10
185
10
155
15
205
20
140
10
185
15
155
15
205
25
0
to
70°C
55
70
30
30
150
10
195
10
165
15
215
20
150
10
195
15
165
15
215
25
–40
to
85°C
-166
50
60
20
20
135
10
170
10
150
15
190
20
135
10
170
15
150
15
190
25
0
to
70°C
55
65
30
30
145
10
180
10
160
15
200
20
145
10
180
15
160
15
200
25
–40
to
85°C
-150
45
50
20
20
125
10
155
10
140
10
170
15
125
10
155
10
140
10
170
20
0
to
70°C
50
55
30
30
135
10
165
10
150
10
180
15
135
10
165
10
150
10
180
20
–40
to
85°C
-133
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Unit
Preliminary
GS816018/32/36T-250/225/200/166/150/133
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
AC Electrical Characteristics
Pipeline
Flow
Through
Parameter
Symbol
Clock Cycle Time
-250
-225
-200
-166
-150
-133
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
tKC
4.0
—
4.4
—
5.0
—
6.0
—
6.7
—
7.5
—
ns
Clock to Output Valid
tKQ
—
2.5
—
2.7
—
3.0
—
3.4
—
3.8
—
4.0
ns
Clock to Output Invalid
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
1
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Output in Low-Z
tLZ
Setup time
tS
1.2
—
1.3
—
1.4
—
1.5
—
1.5
—
1.5
—
ns
Hold time
tH
0.2
—
0.3
—
0.4
—
0.5
—
0.5
—
0.5
—
ns
Clock Cycle Time
tKC
5.5
—
6.0
—
6.5
—
7.0
—
7.5
—
8.5
—
ns
Clock to Output Valid
tKQ
—
5.5
—
6.0
—
6.5
—
7.0
—
7.5
—
8.5
ns
Clock to Output Invalid
tKQX
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock to Output in Low-Z
tLZ1
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Setup time
tS
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Hold time
tH
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
Clock HIGH Time
tKH
1.3
—
1.3
—
1.3
—
1.3
—
1.5
—
1.7
—
ns
Clock LOW Time
tKL
1.5
—
1.5
—
1.5
—
1.5
—
1.7
—
2
—
ns
Clock to Output in
High-Z
tHZ1
1.5
2.3
1.5
2.5
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
—
2.3
—
2.5
—
3.2
—
3.5
—
3.8
—
4.0
ns
G to output in Low-Z
tOLZ1
0
—
0
—
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ1
—
2.3
—
2.5
—
3.0
—
3.0
—
3.0
—
3.0
ns
ZZ setup time
tZZS2
5
—
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH2
1
—
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
20
—
20
—
ns
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Rev: 2.12 3/2002
17/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Write Cycle Timing
Single Write
Burst Write
Deselected
Write
CK
tS tH
tKH tKL
tKC
ADSP is blocked by E inactive
ADSP
tS tH
ADSC initiated write
ADSC
tS tH
ADV
tS tH
A0–An
ADV must be inactive for ADSP Write
WR2
WR1
WR3
tS tH
GW
tS tH
BW
tS tH
BA–BD
WR1
WR1
WR2
tS tH
WR3
WR3
E1 masks ADSP
E1
tS tH
Deselected with E2
E2
tS tH
E2 and E3 only sampled with ADSP or ADSC
E3
G
tS tH
DQA–DQD
Rev: 2.12 3/2002
Hi-Z
Write specified byte for 2A and all bytes for 2B, 2C& 2D
D1A
D2A
D2B
D2C
D2D
18/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
D3A
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Flow Through Read Cycle Timing
Single Read
Burst Read
tKL
CK
tKH
tS tH
tKC
ADSP is blocked by E inactive
ADSP
tS tH
ADSC initiated read
ADSC
tS tH
Suspend Burst
Suspend Burst
ADV
tS tH
A0–An
RD1
RD2
RD3
tS
tH
tS
tH
GW
BW
BA–BB
tS tH
E1 masks ADSP
E1
tS tH
E2 and E3 only sampled with ADSP or ADSC
Deselected with E2
E2
tS tH
E3
tOE
tOHZ
G
tKQX
tOLZ
DQA–DQD
Q1A
Hi-Z
Q2A
tKQX
Q2B
Q2c
Q2D
Q3A
tLZ
tHZ
tKQ
Rev: 2.12 3/2002
19/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Flow Through Read-Write Cycle Timing
Single Write
Single Read
Burst Read
CK
tS tH
tKC
tKH tKL
ADSP is blocked by E inactive
ADSP
tS tH
ADSC initiated read
ADSC
tS tH
ADV
tS tH
A0–An
RD2
WR1
RD1
tS tH
GW
tS tH
tS
BW
tS
BA–BD
tH
WR1
tS tH
E1 masks ADSP
E1
tS tH
E2 and E3 only sampled with ADSP and ADSC
E2
tS tH
Deselected with E3
E3
tOE
tOHZ
G
tS
tKQ
DQA–DQD
Hi-Z
Q1A
tH
D1A
Q2A
Q2B
Q2c
Q2D
Q2A
Burst wrap around to it’s initial state
Rev: 2.12 3/2002
20/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Pipelined SCD Read Cycle Timing
Single Read
Burst Read
CK
tKH
tS tH
tKL
tKC
ADSP
ADSP is blocked by E inactive
tS tH
ADSC initiated read
ADSC
tS tH
Suspend Burst
ADV
tS tH
A0–An
RD2
RD1
RD3
tS
tH
tS
tH
GW
BW
BWA–BWD
tS tH
E1 masks ADSP
E1
tS tH
E2 and E3 only sampled with ADSP or ADSC
Deselected with E2
E2
tS tH
E3
tOE
G
DQA–DQD
tOHZ
Hi-Z
tKQX
tKQX
tOLZ
Q1A
Q2A
Q2B
Q2c
Q2D
Q3A
tLZ
tHZ
tKQ
Rev: 2.12 3/2002
21/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Pipelined SCD Read-Write Cycle Timing
Single Write
Single Read
Burst Read
tKL
CK
tS tH
tKH
tKC
ADSP is blocked by E inactive
ADSP
tS tH
ADSC initiated read
ADSC
tS tH
ADV
tS tH
A0–An
WR1
RD1
RD2
tS tH
GW
tS
tH
BW
tS tH
BWA–BWD
WR1
tS tH
E1 masks ADSP
E1
tS tH
E2 and E3 only sampled with ADSP and ADSC
E2
tS tH
Deselected with E3
E3
tOE
tOHZ
G
DQA–DQD
Rev: 2.12 3/2002
Hi-Z
tS tH
tKQ
Q1A
D1A
Q2A
22/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Q2Bb
Q2c
Q2D
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
tKC
tKH tKL
ADSP
ADSC
tZZS
ZZ
~
~ ~
~
tS tH
~
~
CK
tZZH
~
~~
~
~
~ ~
~ ~
~~
~ ~
~ ~
~
Sleep Mode Timing Diagram
tZZR
Snooze
Application Tips
Single and Dual Cycle Deselect
SCD devices (like this one) force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with
the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually
assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste
bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at
bank address boundary crossings) but greater care must be exercised to avoid excessive bus contention.
Rev: 2.12 3/2002
23/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
TQFP Package Drawing
L
Min. Nom. Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
—
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
—
0.65
—
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
—
1.00
—
Y
Coplanarity
θ
Lead Angle
L1
e
b
A1
A2
0.10
—
Y
0°
c
D
D1
Description
Pin 1
Symbol
θ
7°
E1
E
Notes:
1. All dimensions are in millimeters (mm).
2. Package width and length do not include mold protrusion.
Rev: 2.12 3/2002
24/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number1
Type
Package
Speed2
(MHz/ns)
TA3
1M x 18
GS816018T-250
Pipeline/Flow Through
TQFP
250/5.5
C
1M x 18
GS816018T-225
Pipeline/Flow Through
TQFP
225/6
C
1M x 18
GS816018T-200
Pipeline/Flow Through
TQFP
200/6.5
C
1M x 18
GS816018T-166
Pipeline/Flow Through
TQFP
166/7
C
1M x 18
GS816018T-150
Pipeline/Flow Through
TQFP
150/7.5
C
1M x 18
GS816018T-133
Pipeline/Flow Through
TQFP
133/8.5
C
512K x 32
GS816032T-250
Pipeline/Flow Through
TQFP
250/5.5
C
512K x 32
GS816032T-225
Pipeline/Flow Through
TQFP
225/6
C
512K x 32
GS816032T-200
Pipeline/Flow Through
TQFP
200/6.5
C
512K x 32
GS816032T-166
Pipeline/Flow Through
TQFP
166/7
C
512K x 32
GS816032T-150
Pipeline/Flow Through
TQFP
150/7.5
C
512K x 32
GS816032T-133
Pipeline/Flow Through
TQFP
133/8.5
C
512K x 36
GS816036T-250
Pipeline/Flow Through
TQFP
250/5.5
C
512K x 36
GS816036T-225
Pipeline/Flow Through
TQFP
225/6
C
512K x 36
GS816036T-200
Pipeline/Flow Through
TQFP
200/6.5
C
512K x 36
GS816036T-166
Pipeline/Flow Through
TQFP
166/7
C
512K x 36
GS816036T-150
Pipeline/Flow Through
TQFP
150/7.5
C
512K x 36
GS816036T-133
Pipeline/Flow Through
TQFP
133/8.5
C
1M x 18
GS816018T-250I
Pipeline/Flow Through
TQFP
250/5.5
I
Not Available
1M x 18
GS816018T-225I
Pipeline/Flow Through
TQFP
225/6
I
Not Available
1M x 18
GS816018T-200I
Pipeline/Flow Through
TQFP
200/6.5
I
Not Available
1M x 18
GS816018T-166I
Pipeline/Flow Through
TQFP
166/7
I
1M x 18
GS816018T-150I
Pipeline/Flow Through
TQFP
150/7.5
I
1M x 18
GS816018T-133I
Pipeline/Flow Through
TQFP
133/8.5
I
512K x 32
GS816032T-250I
Pipeline/Flow Through
TQFP
250/5.5
I
Not Available
512K x 32
GS816032T-225I
Pipeline/Flow Through
TQFP
225/6
I
Not Available
512K x 32
GS816032T-200I
Pipeline/Flow Through
TQFP
200/6.5
I
Not Available
512K x 32
GS816032T-166I
Pipeline/Flow Through
TQFP
166/7
I
512K x 32
GS816032T-150I
Pipeline/Flow Through
TQFP
150/7.5
I
512K x 32
GS816032T-133I
Pipeline/Flow Through
TQFP
133/8.5
I
Status
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS816018T-150IT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow through mode-selectable by the user.
3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which
are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 2.12 3/2002
25/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Org
Part Number1
Type
Package
Speed2
(MHz/ns)
TA3
Status
512K x 36
GS816036T-250I
Pipeline/Flow Through
TQFP
250/5.5
I
Not Available
512K x 36
GS816036T-225I
Pipeline/Flow Through
TQFP
225/6
I
Not Available
512K x 36
GS816036T-200I
Pipeline/Flow Through
TQFP
200/6.5
I
Not Available
512K x 36
GS816036T-166I
Pipeline/Flow Through
TQFP
166/7
I
512K x 36
GS816036T-150I
Pipeline/Flow Through
TQFP
150/7.5
I
512K x 36
GS816036T-133I
Pipeline/Flow Through
TQFP
133/8.5
I
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS816018T-150IT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow through mode-selectable by the user.
3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which
are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 2.12 3/2002
26/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
GS816018T-150IT 1.00 9/
1999A;GS816018T-150IT
2.00 1/1999B
GS816018T- 2.00 11/
1999B;GS816018T 2.01 1/
2000C
Types of Changes
Format or Content
Page;Revisions;Reason
Content
• Converted from 0.25u 3.3V process to 0.18u 2.5V process.
Master File Rev B
• Added x72 Pinout.
• Added GSI Logo.
Format
• Changed Flow-Through Read-Write cycle Timing Diagram for
accuracy
• Changed pin description in TQFP to match order of pins in
pinout.
GS816018T 2.01 1/
2000C;GS816018 T 2.02 1/
2000D
• Front page; Features - changed 2.5V I/O supply to 2.5V
or3.3V I/O supply; Core and Interface voltages - Changed
paragraph to include information for 3.3V;Completeness
• Absolute Maximum Ratings; Changed VDDQ - Value: From: .05 to VDD : to : -.05 to 3.6; Completeness.
• Recommended Operating Conditions;Changed: I/O Supply
Voltage- Max. from VDD to 3.6; Input High Voltage- Max. from
VDD +0.3 to 3.6; Same page - took out Note 1;Completeness
• Electrical Characteristics - Added second Output High Voltage
line to table; completeness.
• Note: There was not a Rev 2.02 for the 8160Z or the 8161Z.
GS18/362.0 1/2000DGS18/
362.03 2/2000E
GS18/362.03 2/2000E;
816018_r2_04
Content
• Input High Voltage (p. 11) changed to 0.7* VDD
• Input Low Voltage (p.11) changed to 0.3* VDD
816018_r2_04;
816018_r2_05
Content
• Changed the value of ZZ recovery in the AC Electrical
Characteristics table on page 15 from 20 ns to 100 ns
• Added 225 MHz speed bin
• Updated Pg. 1 table, AC Characteristics table, and Operating
Currents table to match 815xxx
• Updated format to comply with Technical Publications
standards
816018_r2_05;
816018_r2_06
Content/Format
816018_r2_06;
816018_r2_07
Content
• Updated Capitance table—removed Input row and changed
Output row to I/O
816018_r2_07;
816018_r2_08
Content
• Updated Features list on page 1
• Completely reworked table on page 1
• Updated Mode Pin Functions tableon page 7
Content
• Added 3.3 V references to entire document
• Updated Operating Conditions table
• Added Pin 56 to Pin Description table
• Updated Operating Currents table and added note
• Updated Application Tips paragraph
• Updated table on page 1; added power numbers
816018_r2_08;
816018_r2_09
Rev: 2.12 3/2002
27/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
816018_r2_09;
816018_r2_10
816018_r2_10;
816018_r2_11
816018_r2_11;
816018_r2_12
Rev: 2.12 3/2002
Types of Changes
Format or Content
Page;Revisions;Reason
Content
• Updated Operating Currents table
• Updated table on page 1; updated power numbers
• Updated Recommended Operating Conditions table (added
VDDQ references)
Content
• Updated table on page 1
• Created recommended operating conditions tables on pages
12 and 13
• Updated AC Electrical Characteristics table
• Added Sleep mode description on page 23
• Updated Ordering Information for 225 MHz part (changed
from 7ns to 6.5 ns)
• Added 250 MHz speed bin
• Deleted 180 MHz speed bin
Content
• Updated AC Characteristics table
• Updated FT power numbers
• Updated Mb references from 16Mb to 18Mb
• Updated AC Test Conditions table and removed Output Load
2 diagram
28/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.
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