Si6421DQ New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0105 @ VGS = - 4.5 V - 9.5 0.0135 @ VGS = - 2.5 V - 8.5 0.0175 @ VGS = - 1.8 V - 7.3 APPLICATIONS D Load Switch S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6421DQ G 8 D 7 S * Source Pins 2, 3, 6 and 7 must be tied common. 6 S 5 D Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V - 9.5 - 7.5 - 7.5 -6 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID A - 30 - 1.5 - 0.95 1.75 1.08 1.14 0.69 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 55 70 95 115 38 50 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72125 S-03296—Rev. A, 03-Mar-03 www.vishay.com 1 Si6421DQ New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = - 550 mA - 0.40 Typ Max Unit - 0.8 V "100 nA Static Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = - 9.6 V, VGS = 0 V -1 VDS = - 9.6 V, VGS = 0 V, TJ = 70_C - 10 VDS = - 5 V, VGS = - 4.5 V rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V mA 20 A VGS = - 4.5 V, ID = - 9.5 A 0.008 0.0105 VGS = - 2.5 V, ID = - 8.5 A 0.0105 0.0135 0.0175 VGS = - 1.8 V, ID = - 7.5 A 0.0135 gfs VDS = - 15 V, ID = - 9.5 A 50 VSD IS = - 1.5 A, VGS = 0 V - 0.64 - 1.1 60 90 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 16 Rg 4.3 td(on) 46 70 92 140 235 350 165 250 140 210 Gate Resistance Turn-On Delay Time Rise Time VDS = - 10 V, VGS = - 5 V, ID = - 9.5 A tr Turn-Off Delay Time VDD = - 10 V, RL = 15 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 8 IF = - 1.5 A, di/dt = 100 A/ms nC W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 VGS = 5 thru 2 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 1.5 V 24 16 8 24 16 TC = 125_C 8 25_C 1.0 V - 55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2 5 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 VGS - Gate-to-Source Voltage (V) Document Number: 72125 S-03296—Rev. A, 03-Mar-03 Si6421DQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 6500 0.020 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.025 VGS = 1.8 V 0.015 VGS = 2.5 V 0.010 5200 Ciss 3900 2600 Coss VGS = 4.5 V Crss 1300 0.005 0.000 0 0 6 12 18 24 30 0 2 4 ID - Drain Current (A) 8 10 12 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 6 1.6 VDS = 6 V ID = 9.5 A 5 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 6 4 3 2 VGS = 4.5 V ID = 9.5 A 1.4 1.2 1.0 0.8 1 0 0 14 28 42 56 0.6 - 50 70 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.05 30 TJ = 150_C r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 1 TJ = 25_C 0.1 0.0 0.04 ID = 9.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72125 S-03296—Rev. A, 03-Mar-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si6421DQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 200 0.4 0.3 160 ID = 550 mA 0.1 Power (W) V GS(th) Variance (V) 0.2 - 0.0 - 0.1 - 0.2 120 80 40 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10 -3 150 10 -2 10 -1 TJ - Temperature (_C) 1 10 Time (sec) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) I D - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 dc TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 95_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 www.vishay.com S FaxBack 408-970-5600 4 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72125 S-03296—Rev. A, 03-Mar-03 Si6421DQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 72125 S-03296—Rev. A, 03-Mar-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5