To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS30KMH-06 HIGH-SPEED SWITCHING USE FS30KMH-06 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡2.5V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 30mΩ ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ............. 65ns ¡Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA Avalanche drain current (Pulsed) IS ISM Source current Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg Viso Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value — VGS = 0V VDS = 0V L = 100µH Ratings Unit 60 ±10 V V 30 120 A A 30 A 30 120 A A 25 –55 ~ +150 W °C –55 ~ +150 2000 °C V 2.0 g Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 2.5V ID = 15A, VGS = 4V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 15A, VGS = 4V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs Unit Min. Typ. Max. 60 — — — — ±0.1 V µA — 0.6 — 0.9 0.1 1.2 mA V — 25 30 mΩ — — 30 0.38 39 0.45 mΩ V — — 34 2000 — — S pF — — 320 170 — — pF pF — — 33 135 — — ns ns — 145 — ns — — 150 1.0 — 1.5 ns V — — — 65 5.00 — °C/W ns PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 200 tw = 10ms 101 7 5 3 2 100ms 1ms 10ms 100 7 TC = 25°C 5 Single Pulse DC 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 5V 4V 3.5V 50 102 7 5 3 2 20 VGS = 5V 4V 3V 2.5V PD = 25W TC = 25°C Pulse Test 40 2.5V 30 20 2V 10 0 PD = 25W 0 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3V 16 2V 12 TC = 25°C Pulse Test 8 4 0 1.5V 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.6 ID = 50A 1.2 0.8 30A 0.4 10A 0 0 1.0 2.0 3.0 20 10 TC = 25°C Pulse Test 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 4V TRANSFER CHARACTERISTICS (TYPICAL) 30 20 10 102 7 5 4 3 VDS = 10V Pulse Test 2 TC = 25°C 75°C 125°C 101 7 5 4 3 2 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 Ciss 103 7 5 3 2 Coss 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101 30 DRAIN CURRENT ID (A) 40 0 40 0 5.0 VGS = 2.5V GATE-SOURCE VOLTAGE VGS (V) 50 CAPACITANCE Ciss, Coss, Crss (pF) 4.0 50 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test Crss VGS = 0V 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 TCh = 25°C VDD = 30V VGS = 4V RGEN = RGS = 50Ω td(off) tf tr td(on) 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-06 HIGH-SPEED SWITCHING USE 5.0 SOURCE CURRENT IS (A) VDS = 10V 3.0 20V 40V 2.0 1.0 0 10 20 30 40 30 75°C 25°C 10 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 20 0 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 40 50 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 50 Tch = 25°C ID = 30A 4.0 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2 0.2 100 0.1 7 5 3 2 10–1 0.05 0.02 0.01 Single Pulse 7 5 3 2 PDM tw T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999