ON MJW21196 Silicon power transistor Datasheet

MJW21195 (PNP)
MJW21196 (NPN)
Preferred Devices
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
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• Total Harmonic Distortion Characterized
• High DC Current Gain –
•
•
hFE = 20 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
250
Vdc
Collector–Base Voltage
VCBO
400
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector–Emitter Voltage – 1.5 V
VCEX
400
Vdc
Collector Current – Continuous
Collector Current – Peak (Note 1)
IC
16
30
Adc
Base Current – Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
Watts
W/°C
TJ, Tstg
– 65 to
+150
°C
Symbol
Max
Unit
Thermal Resistance,
Junction to Case
RθJC
0.7
°C/W
Thermal Resistance,
Junction to Ambient
RθJA
40
°C/W
Operating and Storage Junction
Temperature Range
16 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
200 WATTS
1
2
3
TO–247
CASE 340K
STYLE 3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
MJW
2119x
LLYWW
1 BASE
1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤ 10%.
3 EMITTER
2 COLLECTOR
MJW2119x = Device Code
x
= 5 or 6
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJW21195
TO–247
30 Units/Rail
MJW21196
TO–247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 1
1
Publication Order Number:
MJW21195/D
MJW21195 (PNP) MJW21196 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
VCEO(sus)
250
–
–
Vdc
ICEO
–
–
100
µAdc
Symbol
Min
Typical
Max
Unit
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
IEBO
–
–
50
µAdc
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
–
–
50
µAdc
4.0
2.25
–
–
–
–
20
8
–
–
80
–
–
–
2.0
–
–
–
–
1.0
3
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
SECOND BREAKDOWN
IS/b
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
Adc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
THD
%
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
–
0.8
–
–
0.08
–
fT
4
–
–
MHz
Cob
–
–
500
pF
NPN MJW21196
6.0
F T, CURRENT BANDWIDTH PRODUCT (MHz)
F T, CURRENT BANDWIDTH PRODUCT (MHz)
PNP MJW21195
6.5
VCE = 10 V
5.5
5.0
VCE = 5 V
4.5
4.0
3.5
TJ = 25°C
ftest = 1 MHz
3.0
2.5
2.0
0.1
1.0
10
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
VCE = 10 V
VCE = 5 V
TJ = 25°C
ftest = 1 MHz
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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2
10
MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
NPN MJW21196
1000
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
1000
TJ = 100°C
100
25°C
-25°C
10
VCE = 20 V
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
0.1
PNP MJW21195
NPN MJW21196
TJ = 100°C
25°C
-25°C
VCE = 5 V
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
25°C
-25°C
10
100
TJ = 100°C
100
VCE = 5 V
0.1
Figure 5. DC Current Gain, VCE = 5 V
PNP MJW21195
IC , COLLECTOR CURRENT (A)
2.0 A
1.5 A
20
1.0 A
15
IB = 0.5 A
10
5.0
TJ = 25°C
0
100
NPN MJW21196
30
25
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, VCE = 5 V
30
IC , COLLECTOR CURRENT (A)
100
1000
100
0
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, VCE = 20 V
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
VCE = 20 V
Figure 3. DC Current Gain, VCE = 20 V
1000
10
25°C
-25°C
10
100
TJ = 100°C
100
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.5 A
25
1.0 A
20
IB = 0.5 A
15
10
5.0
0
25
2.0 A
TJ = 25°C
0
Figure 7. Typical Output Characteristics
5.0
10
15
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
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3
25
MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
NPN MJW21196
1.4
TJ = 25°C
IC/IB = 10
2.5
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
3.0
2.0
1.5
VBE(sat)
1.0
0.5
0
1.0
VBE(sat)
0.8
0.6
0.4
VCE(sat)
0.2
VCE(sat)
0.1
TJ = 25°C
IC/IB = 10
1.2
1.0
10
IC, COLLECTOR CURRENT (AMPS)
0
100
0.1
Figure 9. Typical Saturation Voltages
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
NPN MJW21196
10
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
PNP MJW21195
TJ = 25°C
1.0
VCE = 20 V
VCE = 5 V
0.1
0.1
1.0
100
10
100
10
TJ = 25°C
1.0
VCE = 20 V
VCE = 5 V
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base–Emitter Voltage
Figure 12. Typical Base–Emitter Voltage
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4
100
MJW21195 (PNP) MJW21196 (NPN)
The data of Figure 13 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
TYPICAL CHARACTERISTICS
PNP MJW21195
NPN MJW21196
100
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
100
10 ms
100 ms
10
1 Sec
1
0.1
10 ms
100 ms
10
1 Sec
1
0.1
1
10
100
1000
1
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
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5
MJW21195 (PNP) MJW21196 (NPN)
10000
10000
C, CAPACITANCE (pF)
Cib
1000
Cob
1000
TJ = 25°C
ftest = 1 MHz
TJ = 25°C
ftest = 1 MHz
100
0.1
1.0
10
100
100
0.1
Cob
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. MJW21195 Typical Capacitance
Figure 16. MJW21196 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
C, CAPACITANCE (pF)
Cib
1.0
0.9
0.8
0.7
0.6
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 17. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 Ω
DUT
0.5 Ω
0.5 Ω
DUT
-50 V
Figure 18. Total Harmonic Distortion Test Circuit
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6
8.0 Ω
100
MJW21195 (PNP) MJW21196 (NPN)
PACKAGE DIMENSIONS
TO–247
CASE 340K–01
ISSUE C
0.25 (0.010)
M
–T–
–Q–
T B M
E
–B–
C
L
U
A
R
1
K
2
3
–Y–
P
V
H
F
D
0.25 (0.010)
M
4
Y Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
J
G
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
MILLIMETERS
MIN
MAX
19.7
20.3
15.3
15.9
4.7
5.3
1.0
1.4
1.27 REF
2.0
2.4
5.5 BSC
2.2
2.6
0.4
0.8
14.2
14.8
5.5 NOM
3.7
4.3
3.55
3.65
5.0 NOM
5.5 BSC
3.0
3.4
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
S
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7
INCHES
MIN
MAX
0.776
0.799
0.602
0.626
0.185
0.209
0.039
0.055
0.050 REF
0.079
0.094
0.216 BSC
0.087
0.102
0.016
0.031
0.559
0.583
0.217 NOM
0.146
0.169
0.140
0.144
0.197 NOM
0.217 BSC
0.118
0.134
MJW21195 (PNP) MJW21196 (NPN)
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MJW21195/D
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