SAVANTIC BDV65A Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BDV65/65A/65B/65C
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type BDV64/64A/64B/64C
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use in general purpose amplifier
applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
BDV65
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
BDV65A
VALUE
60
Open emitter
80
BDV65B
100
BDV65C
120
BDV65
60
BDV65A
UNIT
Open base
80
BDV65B
100
BDV65C
120
Open collector
V
V
5
V
IC
Collector current
12
A
ICM
Collector current-peak
15
A
IB
Base current
0.5
A
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
125
Ta=25
3.5
W
SavantIC Semiconductor
Product Specification
BDV65/65A/65B/65C
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV65
V(BR)CEO
VCEsat
VBE
ICBO
ICEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
60
BDV65A
80
IC=30mA, IB=0
V
BDV65B
100
BDV65C
120
Collector-emitter saturation voltage
IC=5A ,IB=20mA
2.0
V
Base-emitter on voltage
IC=5A ; VCE=4V
2.5
V
BDV65
VCB=60V, IE=0
VCB=30V, IE=0;TC=150
0.4
2.0
BDV65A
VCB=80V, IE=0
VCB=40V, IE=0;TC=150
0.4
2.0
BDV65B
VCB=100V, IE=0
VCB=50V, IE=0;TC=150
0.4
2.0
BDV65C
VCB=120V, IE=0
VCB=60V, IE=0;TC=150
0.4
2.0
BDV65
VCE=30V, IB=0
BDV65A
VCE=40V, IB=0
BDV65B
VCE=50V, IB=0
BDV65C
VCE=60V, IB=0
Collector
cut-off current
Collector
cut-off current
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
VEC
Diode forward voltage
IE=10A
mA
2
mA
5
mA
3.5
V
1000
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
MAX
1.0
2
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDV65/65A/65B/65C
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
3
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