DIODES ZUMT619

Super323
 SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ZUMT619
ISSUE 2 - DECEMBER 2008
FEATURES
*
500mW POWER DISSIPATION
*
IC CONT 1A
*
2A Peak Pulse Current
*
Excellent HFE Characteristics Up To 2A (pulsed)
*
Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
*
LCD backlighting inverter circuits
*
Boost functions in DC-DC converters
DEVICE TYPE
COMPLEMENT
PARTMARKING
RCE(sat)
ZUMT619
ZUMT720
T63
160mΩ at 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current**
ICM
2
A
Continuous Collector Current
IC
1.0
A
Base Current
IB
200
mA
Power Dissipation at Tamb =25°C
Ptot
385 †
500 ‡
mW
-55 to +150
°C
Operating and Storage Temperature Tj:Tstg
Range
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT619
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
UNIT
CONDITIONS.
50
V
IC= 100µA
V(BR)CEO
50
V
IC= 10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE= 100µA
Collector Cut-Off
Current
ICBO
10
nA
VCB= 40V
Emitter Cut-Off
Current
IEBO
10
nA
VEB= 4V
Collector Emitter
Cut-Off Current
ICES
10
nA
VCES= 40V
Collector-Emitter
Saturation Voltage
VCE(sat)
24
60
120
160
35
80
200
270
mV
mV
mV
mV
IC= 100mA, IB= 10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB= 10mA*
IC= 1A, IB= 50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
940
1100
mV
IC= 1A, IB= 50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
850
1100
mV
IC= 1A, VCE= 2V*
Static Forward
Current Transfer
Ratio
hFE
Transition
Frequency
fT
Output Capacitance
200
300
200
75
20
TYP.
MAX.
IC=10mA, VCE= 2V*
IC= 100mA, VCE=2 V*
IC= 500mA, VCE=2V*
IC= 1A, VCE= 2V*
IC= 1.5A, VCE=2 V*
420
450
350
130
60
215
MHz
Cobo
6
pF
Turn-On Time
t(on)
150
ns
Turn-Off Time
t(off)
425
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
IC= 50mA, VCE=10V
f= 100MHz
VCB= 10V, f=1MHz
VCC=10 V, IC= 1A
IB1=IB2=100mA
ZUMT619
TYPICAL CHARACTERISTICS
0.4
0.4
+25°C
IC/IB=50
0.3
IC/IB=10
IC/IB=50
IC/IB=100
VCE(sat) - (V)
VCE(sat) - (V)
0.3
0.2
0.1
0
-55°C
+25°C
+100°C
+150°C
0.2
0.1
1m
10m
100m
1
0
10
1m
10m
IC - Collector Current (A)
VCE(sat) v IC
1.0
VCE=2V
+100°C
400
+25°C
-55°C
200
10
IC/IB=50
0.6
0.4
-55°C
+25°C
+100°C
+150°C
0.2
0
0
1m
10m
100m
1
10
1m
IC - Collector Current (A)
hFE v IC
10m
100m
1
10
IC - Collector Current (A)
VBE(sat) v IC
10
IC - Collector Current (A)
1.15
0.9
VBE(on) - (V)
1
0.8
600
VBE(sat) - (V)
hFE - Typical Gain
800
100m
IC - Collector Current (A)
VCE(sat) v IC
0.6
-55°C
+25°C
+100°C
+150°C
0.3
0
1m
10m
100m
1
IC - Collector Current (A)
VBE(on) v IC
10
1
100m
10m
100m
DC
1s
100ms
10ms
1ms
100µs
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100