DIODES 1N4935G-B

BL
GALAXY ELECTRICAL
1N4933G---1N4937G
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 1.0 A
GLASS PASSIVATED JUNCTION
FEATURES
Low cost
DO - 41
Glass passivated junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohil,Isopropanop
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N
4933G
1N
4934G
1N
4935G
1N
4936G
1N
4937G
UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
V
Maximum RMS voltage
VRMS
35
70
140
280
420
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
1.0
A
IFSM
30.0
A
VF
1.3
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@1.0 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
5.0
IR
@TA=100
100.0
A
Maximym reverse capacitance
(Note1)
trr
200
ns
Typical junction capacitance
(Note2)
CJ
12.0
pF
Typical thermal resistance
(Note3)
RθJA
22.0
TJ
- 55---- +175
TSTG
- 55---- + 175
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I F =0.5A I R=1A I rr=0.25A.
/W
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0269004
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
1N4933G---1N4937G
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
10
N.1.
50
N.1.
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
( - )
OSCILLOSCOPE
(NOTE 1)
1
N.1.
0
PULSE
GENERATOR
(NOTE2)
-0.25A
( + )
-1.0A
NOTES:1.RISETIME= 7ns MAX. INPUT IMPEDANCE= 1M . 22PF
2.RISETIME= 10ns MAX. SOURCEIMPEDANCE= 50
SET TIMEBASEFOR50/100 ns /cm
1.0
Single Phase
Half Wave 50H Z
Resistive or
Inductive Load
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
FIG.3 --PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD OUTPUT CURRENT
AMPERES
FIG.2 --FORWARD CURRENT DERATING CURVE
24
TJ=25
8.3ms Single Half
Sine-Wave
18
12
6
0
1
2
LEAD TEMPERATURE,
6
20
10
40
60
100
FIG.4--TYPICAL JUNCTION CAPACITANCE
10
1.0
TJ =25
PULSE WIDTH=300
s
0.1
0.2 0.4
0.6 0.8
1.0 1.2 1.4 1.6 1.8 2.0
JUNCTION CAPACITANCE,pF
20
20
0.01
4
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
FORWARD CURRENT
AMPERES
30
16
14
12
10
4
TJ=25
f=1MHz
2
1
.1
FORWARD VOLTAGE,VOLTS
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
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Document Number 0269004
BLGALAXY ELECTRICAL
2.