DIODES DZT953

DZT953
NEW P
PRO
RO DUCT
PNP SURFACE MOUNT TRANSISTOR
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Features
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Epitaxial Planar Die Construction
Complementary NPN Type Available (DZT853)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
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SOT-223
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
Maximum Ratings
Power Dissipation
Operating and Storage Temperature Range
1.
2.
3.
4.
BASE
EMITTER
TOP VIEW
Schematic and Pin Configuration
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Notes:
COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, TSTG
Value
-140
-100
-6
-5
-10
1(Note 3)
3(Note 4)
-55 to +150
Unit
V
V
V
A
A
W
°C
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, pad layout as shown on page 4.
The power which can be dissipated, assuming the device is mounted in a typical manner on a PCB with copper equal to 4 square inch minimum.
DS30941 Rev. 6 - 2
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DZT953
© Diodes Incorporated
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
-140
-100
-6
-165
-120
-9
Collector Cutoff Current
ICBO
⎯
⎯
Emitter Cutoff Current
ON CHARACTERISTICS
IEBO
⎯
⎯
⎯
⎯
⎯
-50
-1
-10
V
V
V
nA
μA
nA
⎯
⎯
⎯
⎯
⎯
⎯
-18
-70
-125
-260
-50
-115
-220
-420
mV
-960
-880
-1170
-1160
mV
mV
hFE
100
100
50
30
⎯
220
200
100
70
15
⎯
300
⎯
⎯
⎯
⎯
fT
⎯
125
⎯
MHz
Cobo
⎯
65
⎯
pF
ton
toff
⎯
65
100
⎯
ns
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(SAT)
VBE(ON)
DC Current Gain
Test Condition
IC = -100μA, IE = 0
IC = -10mA*, IB = 0
IE = -100μA, IC = 0
VCB = -100V, IE = 0
VCB = -100V, IE = 0, TA = 100°C
VEB = - 6V, IC = 0
IC = -100mA, IB = -10mA*
IC = -1A, IB = -100mA*
IC = -2A, IB = -200mA*
IC = -4A, IB = -400mA*
IC = -4A, IB = -400mA*
ICE = -4A, VCE = -1V*
IC = -10mA, VCE = -1V*
IC = -1A, VCE = -1V*
IC = -3A, VCE = -1V*
IC = -4A, VCE = -1V*
IC = -10A, VCE = -1V*
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Switching Times
IC = -100mA, VCE = -10V,
f = 50MHz
VCB = -10V, f = 1MHz
IC = -2A, IB1 = -200mA
IB2 = 200mA, VCC = -10V
*Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%
2.0
-IC, COLLECTOR CURRENT (A)
IB = -10mA
PD, POWER DISSIPATION (W)
NEW PRODUCT
Electrical Characteristics
RθJA = 125°C
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
DS30941 Rev. 6 - 2
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1.6
IB = -8mA
1.2
0.8
0.4
IB = -6mA
IB = -4mA
IB = -2mA
0
0
3
5
1
2
4
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig 2. Collector Current vs. Collector Emitter Voltage
DZT953
© Diodes Incorporated
0.8
400
hFE, DC CURRENT GAIN
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
NEW PRODUCT
IC/IB = 10
TA = 150°C
VCE = -1V
300
T A = 85°C
200
100
T A = 25°C
TA = -55° C
TA = 150°C
0.6
TA = 85°C
0.4
TA = 25°C
0.2
TA = -55°C
0
0.01
0
0.01
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
0.1
10
1
-IC, COLLECTOR CURRENT(A)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
1.0
0.8
TA = -55° C
0.6
0.4
T A = 25°C
TA = 85° C
TA = 150°C
0.2
VCE = -1V
0
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 5 Base-Emitter Turn-On Voltage vs. Collector Current
0.1
1
-IC, COLLECTOR CURRENT (A)
Fig. 4 Collector-Emitter Saturation Voltage
vs. Collector Current
10
TA = -55°C
TA = 25°C
TA = 85° C
TA = 150°C
IC/IB = 10
-IC, COLLECTOR CURRENT (A)
Fig. 6 Base-Emitter Saturation Voltage vs. Collector Current
Ordering Information (Note 5)
Valid Marking Codes
DZT953
PT06
Device
DZT953-13
DZT953-13
Notes:
5.
Packaging
SOT-223
SOT-223
Shipping
2500/Tape & Reel
2500/Tape & Reel
Packaging Details as shown on page 4, or go to our website at http://www.diodes.com/ap2007.pdf.
Marking Information
YM
DZT953
DZT953 or PT06= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
(Top View)
Date Code Key
Year
2006
T
Code
2007
U
2008
V
2009
W
2010
X
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Code
1
2
3
4
5
6
7
DS30941 Rev. 6 - 2
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Aug
8
2011
Y
Sep
9
Oct
O
2012
Z
Nov
N
Dec
D
DZT953
© Diodes Incorporated
NEW PRODUCT
Package Outline Dimensions
SOT-223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b1
2.90
3.10
3.00
b2
0.60
0.80
0.70
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Suggested Pad Layout:
(Unit:mm)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30941 Rev. 6 - 2
4 of 4
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DZT953
© Diodes Incorporated