VISHAY 1N5820TR

VS-1N5820, VS-1N5820-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.0 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
C-16
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
DO-201AD (C-16)
IF(AV)
3A
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
VR
20 V
VF at IF
See Electrical table
IRM max.
20 mA at 100 °C
TJ max.
150 °C
Diode variation
Single die
EAS
See Electrical table
DESCRIPTION
The VS-1N5820... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
Rectangular waveform
VALUES
UNITS
3.0
A
20
V
450
A
VRRM
IFSM
tp = 5 μs sine
VF
3 Apk, TJ = 25 °C
TJ
Range
0.475
V
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
Maximum DC reverse voltage
VS-1N5820
VS-1N5820-M3
UNITS
20
20
V
VRWM
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current at TJ = 25 °C
IFSM
Revision: 11-Oct-11
TEST CONDITIONS
VALUES
50 % duty cycle at TL = 114 °C, rectangular waveform
With cooling fins
3.0
5 µs sine or 3 µs rect. pulse
450
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
UNITS
A
90
Document Number: 93257
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N5820, VS-1N5820-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
TEST CONDITIONS
3A
TJ = 25 °C
9.4 A
TJ = 25 °C
VR = Rated VR
TJ = 100 °C
TYP.
MAX.
0.41
0.475
0.49
0.85
0.05
2.0
8.1
20
-
UNITS
V
mA
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
350
LS
Measured lead to lead 5 mm from package body
9.0
-
nH
-
10 000
V/µs
dV/dt
Rated VR
pF
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ
(1),
TEST CONDITIONS
TStg
VALUES
UNITS
- 65 to 150
°C
Maximum thermal resistance,
junction to lead
RthJL
With fin 20 x 20 (0.79 x 0.79) 1.0 thick
34
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Without cooling fin
80
1.2
Approximate weight
Marking device
°C/W
g
0.042
Case style C-16
oz.
1N5820
Note
(1)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Revision: 11-Oct-11
Document Number: 93257
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N5820, VS-1N5820-M3
Vishay Semiconductors
100
Allowable Lead Temperature (°C)
IF - Instantaneous Forward Current (A)
www.vishay.com
10
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
150
140
130
DC
120
Square wave
(D = 0.5)
110
100
see note (1)
0.1
90
0
0.2
0.4
0.6
0.8
0
1
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
93257_01
1
1.5
2
2.5
3
3.5
4
4.5
IF(AV) - Average Forward Current (A)
93257_04
Fig. 4 - Typical Average Forward Current vs.
Allowable Lead Temperature
1.4
100
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average Power Loss (W)
TJ = 150 °C
IR - Reverse Current (mA)
0.5
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
TJ = 25 °C
0.01
1.2
1
0.8
RMS Limit
0.6
DC
0.4
0.2
0.001
0
0
5
10
15
20
VR - Reverse Voltage (V)
93257_02
0
100
15
VR - Reverse Voltage (V)
93257_03
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
20
IFSM - Non-Repetitive Surge Current (A)
CT - Junction Capacitance (pF)
TJ = 25 °C
10
1.5
2
2.5
3
3.5
4
4.5
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
5
1
Average Forward Current - IF(AV) (A)
93257_05
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
0
0.5
1000
TJ = 25 °C
100
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
10
10
93257_06
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D)
Revision: 11-Oct-11
Document Number: 93257
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N5820, VS-1N5820-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
1N5820
TR
-M3
1
2
3
4
1
-
Vishay Semiconductors product
2
-
Part number: 3 A, 20 V
3
-
TR = Tape and reel package
None = Bulk package
4
-
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-1N5820
500
500
Bulk
VS-1N5820TR
1200
1200
Tape and reel
VS-1N5820-M3
500
500
Bulk
VS-1N5820TR-M3
1200
1200
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95242
Part marking information
www.vishay.com/doc?95304
Packaging information
www.vishay.com/doc?95338
Revision: 11-Oct-11
Document Number: 93257
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-204AL (DO-41)
DIMENSIONS in millimeters (inches)
2.70 (0.106)
DIA.
2.29 (0.090)
Cathode band
27.0 (1.06) MIN.
(2 places)
5.21 (0.205)
MAX.
27.0 (1.06) MIN.
(2 places)
1.27 (0.050) MAX.
Flash (2 places)
5.21 (0.205)
MAX.
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
2.70 (0.106)
DIA.
2.29 (0.090)
Revision: 29-Aug-11
Document Number: 95241
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000