Diotec BC856 Surface mount si-epitaxial planartransistor Datasheet

BC 856 ... BC 860
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung
1.3 ±0.1
2.5 max
3
Type
Code
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
2
1
250 mW
Plastic case
Kunststoffgehäuse
1.1
2.9 ±0.1
0.4
PNP
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC 856
BC 857/860
BC 858/859
Collector-Emitter-voltage
B open
- VCE0
65 V
45 V
30 V
Collector-Base-voltage
E open
- VCB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
- VEB0
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (DC)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
IEM
200 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10 :A
hFE
typ. 90
typ. 150
typ. 270
- VCE = 5 V, - IC = 2 mA
hFE
110...220
200...450
420...800
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz
1
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
hie
1.6...4.5 kS
3.2...8.5 kS
6...15 kS
Output admittance – Ausgangs-Leitwert
hoe
18 < 30 :S
30 < 60 :S
60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
14
01.11.2003
General Purpose Transistors
BC 856 ... BC 860
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
-VCEsat
–
90 mV
250 mV
- IC = 100 mA, - IB = 5 mA
-VCEsat
–
200 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
- VBEsat
–
700 mV
–
- IC = 100 mA, - IB = 5 mA
- VBEsat
–
900 mV
–
- VCE = 5 V, - IC = 2 mA
- VBEon
600 mV
650 mV
750 mV
- VCE = 5 V, - IC = 10 mA
- VBEon
–
–
820 mV
IE = 0, - VCB = 30 V
- ICB0
–
–
15 nA
IE = 0, - VCB = 30 V, Tj = 150/C
- ICB0
–
–
5 :A
- IEB0
–
–
100 nA
100 MHz
–
–
–
–
6 pF
–
2 dB
10 dB
Base-Emitter voltage – Basis-Emitter-Spannung 1)
Collector-Base cutoff current – Kollektorreststrom
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 5 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 :A
RG = 2 kS, f = 1 kHz,
)f = 200 Hz
- VCE = 5 V, - IC = 200 :A
RG = 2 kS, f = 30...15 kHz
BC 856...
F
BC 858
BC 859/860
F
–
1 dB
4 dB
BC 859
F
–
1.2 dB
4 dB
BC 860
F
–
1.2 dB
4 dB
–
–
0.11 :V
Equivalent noise voltage – Äquivalente Rauschspannung
- VCE = 5 V, - IC = 200 :A
RG = 2 kS, f = 10 ... 50 Hz
BC 860
uF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking of available current gain
groups per type
Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ
420 K/W 2)
RthA
BC 846 ... BC 850
BC 856A = 3A
BC 856B = 3B
BC 857A = 3E
BC 857B = 3F
BC 857C = 3G
BC 858A = 3J
BC 858B = 3K
BC 858C = 3L
BC 859B = 4B
BC 859C = 4C
BC 860B = 4F
BC 860C = 4G
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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2
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