ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain (%) VCE(sat) - (Volts) 0.8 0.6 IC/IB=10 0.4 0.2 0 0.01 0.1 10 1 80 C B VCE=10V 60 40 IC - Collector Current (Amps) 0.01 0.1 1 10 IC - Collector Current (Amps) hFE v IC VCE(sat) v IC 1.4 2.0 1.2 1.6 VBE - (Volts) VBE(sat) - (Volts) 1.8 IC/IB=10 1.4 1.2 1.0 PARAMETER SYMBOL ZTX452 ZTX453 UNIT Collector-Base Voltage VCBO 100 120 V Collector-Emitter Voltage VCEO 80 100 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 100 120 V IC=100µ A Collector-Emitter Sustaining Voltage VCEO(sus) 80 100 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 0.1 µA µA VCB=80V VCB=100V Emitter Cut-Off Current IEBO 0.1 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.7 0.7 V IC=150mA, IB=15mA* Base-Emitter Saturation Voltage VBE(sat) 1.3 1.3 V IC=150mA, IB=15mA* Static Forward Current Transfer Ratio hFE 40 10 Transition Frequency fT 150 Output Capacitance Cobo 0.8 0.01 0.1 1 10 0.001 IC - Collector Current (Amps) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 300µs 100µs ZTX452 ZTX453 0.01 0.1 1 0.1 VBE(on) v IC Single Pulse Test at Tamb=25°C 10 0.01 IC - Collector Current (Amps) VBE(sat) v IC 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-178 ZTX452 MIN. 0.6 0.4 V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1.0 0.8 0.6 IC - Collector Current (Amps) VCE=10V E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 20 0.001 2.2 ZTX452 ZTX453 1 10 ZTX453 MAX. MIN. 150 40 10 MAX. 200 150 15 3-177 15 IC=150mA, VCE=10V* IC=1A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain (%) VCE(sat) - (Volts) 0.8 0.6 IC/IB=10 0.4 0.2 0 0.01 0.1 10 1 80 C B VCE=10V 60 40 IC - Collector Current (Amps) 0.01 0.1 1 10 IC - Collector Current (Amps) hFE v IC VCE(sat) v IC 1.4 2.0 1.2 1.6 VBE - (Volts) VBE(sat) - (Volts) 1.8 IC/IB=10 1.4 1.2 1.0 PARAMETER SYMBOL ZTX452 ZTX453 UNIT Collector-Base Voltage VCBO 100 120 V Collector-Emitter Voltage VCEO 80 100 Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C PARAMETER SYMBOL UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 100 120 V IC=100µ A Collector-Emitter Sustaining Voltage VCEO(sus) 80 100 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 0.1 µA µA VCB=80V VCB=100V Emitter Cut-Off Current IEBO 0.1 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.7 0.7 V IC=150mA, IB=15mA* Base-Emitter Saturation Voltage VBE(sat) 1.3 1.3 V IC=150mA, IB=15mA* Static Forward Current Transfer Ratio hFE 40 10 Transition Frequency fT 150 Output Capacitance Cobo 0.8 0.01 0.1 1 10 0.001 IC - Collector Current (Amps) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 300µs 100µs ZTX452 ZTX453 0.01 0.1 1 0.1 VBE(on) v IC Single Pulse Test at Tamb=25°C 10 0.01 IC - Collector Current (Amps) VBE(sat) v IC 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-178 ZTX452 MIN. 0.6 0.4 V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1.0 0.8 0.6 IC - Collector Current (Amps) VCE=10V E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 20 0.001 2.2 ZTX452 ZTX453 1 10 ZTX453 MAX. MIN. 150 40 10 MAX. 200 150 15 3-177 15 IC=150mA, VCE=10V* IC=1A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz